Kazumi Kurimoto

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,301,208
- Issue date Nov 27, 2007
- Matsushita Electric Industrial Co., Ltd.
- Takato Handa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having triple-well structure
- Patent number 7,271,449
- Issue date Sep 18, 2007
- Matsushita Electric Industrial Co., Ltd.
- Makoto Misaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,870,265
- Issue date Mar 22, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kazumi Kurimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS transistor with gate sidewall insulating layer
- Patent number 5,808,347
- Issue date Sep 15, 1998
- Matsushita Electric Industrial Co., Ltd.
- Kazumi Kurimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unsymmetrical MOS device having a gate insulator area offset from t...
- Patent number 5,675,168
- Issue date Oct 7, 1997
- Matsushita Electric Industrial Co., Ltd.
- Kyoji Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having reduced gate overlapping capacitance
- Patent number 5,610,430
- Issue date Mar 11, 1997
- Matsushita Electric Industrial Co., Ltd.
- Kyoji Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor and its fabricating method
- Patent number 5,518,944
- Issue date May 21, 1996
- Matsushita Electric Industrial Co., Ltd.
- Akira Hiroki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for protecting an internal circuit from electr...
- Patent number 5,514,893
- Issue date May 7, 1996
- Matsushita Electric Industrial Co., Ltd.
- Isao Miyanaga
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
MOS type semiconductor device having a low concentration impurity d...
- Patent number 5,512,771
- Issue date Apr 30, 1996
- Matsushita Electric Industrial Co., Ltd.
- Akira Hiroki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor for protection against electrostatic discharge
- Patent number 5,451,799
- Issue date Sep 19, 1995
- Matsushita Electric Industrial Co., Ltd.
- Kazumi Kurimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of manufacture for MOS field effect transistor...
- Patent number 5,405,787
- Issue date Apr 11, 1995
- Matsushita Electric Industrial Co., Ltd.
- Kazumi Kurimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDD FET with polysilicon sidewalls
- Patent number 5,386,133
- Issue date Jan 31, 1995
- Matsushita Electric Industrial Co., Ltd.
- Akira Hiroki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of manufacture for MOS field effect transistor...
- Patent number 5,306,655
- Issue date Apr 26, 1994
- Matsushita Electric Industrial Co., Ltd.
- Kazumi Kurimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for LDDFETS using oblique ion implantion techn...
- Patent number 5,270,226
- Issue date Dec 14, 1993
- Matsushita Electric Industrial Co., Ltd.
- Takashi Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of proudcing a MIS transistor
- Patent number 5,221,632
- Issue date Jun 22, 1993
- Matsushita Electric Industrial Co., Ltd.
- Kazumi Kurimoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and fabrication method therefor
- Publication number 20060086990
- Publication date Apr 27, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Makoto Misaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20060027865
- Publication date Feb 9, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Takato Handa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20030218254
- Publication date Nov 27, 2003
- Matsushita Electric Industrial Co., Ltd.
- Kazumi Kurimoto
- H01 - BASIC ELECTRIC ELEMENTS

Kazumi Kurimoto

Person

Patents Grantslast 30 patents

Semiconductor device and method for fabricating the same

Semiconductor device having triple-well structure

Semiconductor device and manufacturing method thereof

MIS transistor with gate sidewall insulating layer

Unsymmetrical MOS device having a gate insulator area offset from t...

Semiconductor device having reduced gate overlapping capacitance

MOS transistor and its fabricating method

Semiconductor device for protecting an internal circuit from electr...

MOS type semiconductor device having a low concentration impurity d...

MOS transistor for protection against electrostatic discharge

Structure and method of manufacture for MOS field effect transistor...

LDD FET with polysilicon sidewalls

Structure and method of manufacture for MOS field effect transistor...

Manufacturing method for LDDFETS using oblique ion implantion techn...

Method of proudcing a MIS transistor

Patents Applicationslast 30 patents

Semiconductor device and fabrication method therefor

Semiconductor device and method for fabricating the same

Semiconductor device and manufacturing method thereof