Kazutaka YAMANE

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic field sensor
- Patent number 12,032,041
- Issue date Jul 9, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- G01 - MEASURING TESTING
Information Patent Grant
Spiking neural network hardware based on magnetic-tunnel-junction l...
- Patent number 11,894,029
- Issue date Feb 6, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel magneto-resistive (TMR) sensor with perpendicular magnetic t...
- Patent number 11,791,083
- Issue date Oct 17, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng-Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin diode devices
- Patent number 11,751,483
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Wai Cheung Law
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic field sensor using magnetic tunneling junction (MTJ) struc...
- Patent number 11,747,412
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic field sensor with MTJ elements arranged in series
- Patent number 11,719,773
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hemant M. Dixit
- G01 - MEASURING TESTING
Information Patent Grant
Memory cell having a free ferromagnetic material layer with a curve...
- Patent number 11,682,514
- Issue date Jun 20, 2023
- GLOBALFOUNDRIES U.S. INC.
- Hemant Dixit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic field sensor using different magnetic tunneling junction (...
- Patent number 11,574,758
- Issue date Feb 7, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kazutaka Yamane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel magnetoresistance sensor devices and methods of forming the...
- Patent number 11,513,175
- Issue date Nov 29, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ping Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seed layers for a non-volatile memory element
- Patent number 10,818,837
- Issue date Oct 27, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yuichi Otani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High energy barrier perpendicular magnetic tunnel junction element...
- Patent number 10,529,917
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kazutaka Yamane
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory structures and integrated circuits wi...
- Patent number 10,468,457
- Issue date Nov 5, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Dinggui Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with magnetic tunnel junctions and methods for...
- Patent number 10,381,554
- Issue date Aug 13, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite spacer layer for magnetoresistive memory
- Patent number 10,297,745
- Issue date May 21, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with magnetic tunnel junctions and methods for...
- Patent number 10,032,980
- Issue date Jul 24, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Seungmo Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with magnetic tunnel junctions and methods for...
- Patent number 9,865,801
- Issue date Jan 9, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kazutaka Yamane
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC-TUNNEL-JUNCTION DEVICES FOR A MAGNETIC-FIELD SENSOR
- Publication number 20240389467
- Publication date Nov 21, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng-Huat Toh
Information Patent Application
MEMORY DEVICE HAVING A SWITCHING ELEMENT THICKER AT A FIRST SIDE TH...
- Publication number 20230403953
- Publication date Dec 14, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ju Dy LIM
Information Patent Application
MAGNETIC FIELD SENSOR
- Publication number 20230296698
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat NAIK
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC FIELD SENSOR USING MAGNETIC TUNNELING JUNCTION (MTJ) STRUC...
- Publication number 20230076514
- Publication date Mar 9, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat NAIK
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC FIELD SENSOR WITH MTJ ELEMENTS ARRANGED IN SERIES
- Publication number 20230014455
- Publication date Jan 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hemant M. Dixit
- G01 - MEASURING TESTING
Information Patent Application
TUNNEL MAGNETO-RESISTIVE (TMR) SENSOR WITH PERPENDICULAR MAGNETIC T...
- Publication number 20220384082
- Publication date Dec 1, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng-Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY ELEMENTS FORMED IN CONJUNCTION WITH A MAGNETIC VIA
- Publication number 20220367790
- Publication date Nov 17, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC FIELD SENSOR USING DIFFERENT MAGNETIC TUNNELING JUNCTION (...
- Publication number 20220359114
- Publication date Nov 10, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kazutaka YAMANE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN DIODE DEVICES
- Publication number 20220209102
- Publication date Jun 30, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Wai Cheung LAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL HAVING A FREE FERROMAGNETIC MATERIAL LAYER WITH A CURVE...
- Publication number 20220059754
- Publication date Feb 24, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Hemant Dixit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FORMING SEMICONDUCTOR DEVICES
- Publication number 20210247470
- Publication date Aug 12, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ping ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICES AND METHODS OF FORMING THEREOF
- Publication number 20210159393
- Publication date May 27, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Wai Cheung LAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210057645
- Publication date Feb 25, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ju Dy LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING NONVOLATILE RANDOM ACCESS MEMORY DEVICE
- Publication number 20210013405
- Publication date Jan 14, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- DAO HWEE GRAYSON WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED LAYERS FOR A NON-VOLATILE MEMORY ELEMENT
- Publication number 20200357984
- Publication date Nov 12, 2020
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yuichi Otani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...
- Publication number 20190081234
- Publication date Mar 14, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT WITH REDUCED TEMPERATURE SENSITIVITY
- Publication number 20180130943
- Publication date May 10, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Energy Barrier Perpendicular Magnetic Tunnel Junction Element...
- Publication number 20180123027
- Publication date May 3, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kazutaka YAMANE
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...
- Publication number 20170345999
- Publication date Nov 30, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Seungmo Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...
- Publication number 20170309813
- Publication date Oct 26, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER LAYER FOR MAGNETORESISTIVE MEMORY
- Publication number 20170125664
- Publication date May 4, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh TAHMASEBI
- H01 - BASIC ELECTRIC ELEMENTS

Kazutaka YAMANE

Person

Patents Grantslast 30 patents

Magnetic field sensor

Spiking neural network hardware based on magnetic-tunnel-junction l...

Tunnel magneto-resistive (TMR) sensor with perpendicular magnetic t...

Spin diode devices

Magnetic field sensor using magnetic tunneling junction (MTJ) struc...

Magnetic field sensor with MTJ elements arranged in series

Memory cell having a free ferromagnetic material layer with a curve...

Magnetic field sensor using different magnetic tunneling junction (...

Tunnel magnetoresistance sensor devices and methods of forming the...

Seed layers for a non-volatile memory element

High energy barrier perpendicular magnetic tunnel junction element...

Magnetic random access memory structures and integrated circuits wi...

Integrated circuits with magnetic tunnel junctions and methods for...

Composite spacer layer for magnetoresistive memory

Integrated circuits with magnetic tunnel junctions and methods for...

Integrated circuits with magnetic tunnel junctions and methods for...

Patents Applicationslast 30 patents

MAGNETIC-TUNNEL-JUNCTION DEVICES FOR A MAGNETIC-FIELD SENSOR

MEMORY DEVICE HAVING A SWITCHING ELEMENT THICKER AT A FIRST SIDE TH...

MAGNETIC FIELD SENSOR

MAGNETIC FIELD SENSOR USING MAGNETIC TUNNELING JUNCTION (MTJ) STRUC...

MAGNETIC FIELD SENSOR WITH MTJ ELEMENTS ARRANGED IN SERIES

TUNNEL MAGNETO-RESISTIVE (TMR) SENSOR WITH PERPENDICULAR MAGNETIC T...

NON-VOLATILE MEMORY ELEMENTS FORMED IN CONJUNCTION WITH A MAGNETIC VIA

MAGNETIC FIELD SENSOR USING DIFFERENT MAGNETIC TUNNELING JUNCTION (...

SPIN DIODE DEVICES

MEMORY CELL HAVING A FREE FERROMAGNETIC MATERIAL LAYER WITH A CURVE...

SEMICONDUCTOR DEVICES AND METHODS OF FORMING SEMICONDUCTOR DEVICES

MAGNETIC TUNNEL JUNCTION DEVICES AND METHODS OF FORMING THEREOF

MEMORY DEVICE AND METHOD OF FORMING THE SAME

RESISTIVE SWITCHING NONVOLATILE RANDOM ACCESS MEMORY DEVICE

SEED LAYERS FOR A NON-VOLATILE MEMORY ELEMENT

INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...

MAGNETIC TUNNEL JUNCTION ELEMENT WITH REDUCED TEMPERATURE SENSITIVITY

High Energy Barrier Perpendicular Magnetic Tunnel Junction Element...

INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...

INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...

SPACER LAYER FOR MAGNETORESISTIVE MEMORY