Kazuya Ohuchi

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,902,612
- Issue date Mar 8, 2011
- Kabushiki Kaisha Toshiba
- Takashi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a silicide layer and a dielectric layer
- Patent number 7,875,976
- Issue date Jan 25, 2011
- Kabushiki Kaisha Toshiba
- Makoto Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicide layer for semiconductor device
- Patent number 7,456,096
- Issue date Nov 25, 2008
- Kabushiki Kaisha Toshiba
- Takashi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a silicide film
- Patent number 7,183,168
- Issue date Feb 27, 2007
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a gate electr...
- Patent number 7,148,096
- Issue date Dec 12, 2006
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal silicide films formed on source a...
- Patent number 7,141,467
- Issue date Nov 28, 2006
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate electrode of stacked structure inc...
- Patent number 6,897,534
- Issue date May 24, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an injection substance to knock against...
- Patent number 6,891,232
- Issue date May 10, 2005
- Kabushiki Kaisha Toshiba
- Kiyotaka Miyano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,878,579
- Issue date Apr 12, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a silicide film
- Patent number 6,841,429
- Issue date Jan 11, 2005
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,791,106
- Issue date Sep 14, 2004
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,762,468
- Issue date Jul 13, 2004
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit including insulated gate field eff...
- Patent number 6,744,104
- Issue date Jun 1, 2004
- Kabushiki Kaisha Toshiba
- Nobutoshi Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having silicide film
- Patent number 6,677,660
- Issue date Jan 13, 2004
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate electrode of stacked structure inc...
- Patent number 6,642,585
- Issue date Nov 4, 2003
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having MIS field effect transistors or three-d...
- Patent number 6,525,403
- Issue date Feb 25, 2003
- Kabushiki Kaisha Toshiba
- Satoshi Inaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS semiconductor device having gate insulating film containing nit...
- Patent number 6,498,374
- Issue date Dec 24, 2002
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having salicide layer
- Patent number 5,917,223
- Issue date Jun 29, 1999
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 5,734,181
- Issue date Mar 31, 1998
- Kabushiki Kaisha Toshiba
- Ryuji Ohba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-speed semiconductor gain memory cell with minimal area occupancy
- Patent number 5,463,234
- Issue date Oct 31, 1995
- Kabushiki Kaisha Toshiba
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20150263117
- Publication date Sep 17, 2015
- KABUSHIKI KAISHA TOSHIBA
- Koichi KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURE THEREOF
- Publication number 20130221422
- Publication date Aug 29, 2013
- Kabushiki Kaisha Toshiba
- Mitsuhiko NODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF...
- Publication number 20130049199
- Publication date Feb 28, 2013
- International Business Machines Corporation
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF...
- Publication number 20130049200
- Publication date Feb 28, 2013
- International Business Machines Corporation
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090008727
- Publication date Jan 8, 2009
- KABUSHIKI KAISHA TOSHIBA
- Takashi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20080088021
- Publication date Apr 17, 2008
- Kabushiki Kaisha Toshiba
- Makoto WADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20070141836
- Publication date Jun 21, 2007
- KABUSHIKI KAISHA TOSHIBA
- Takashi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device containing distorted silicon layer formed on s...
- Publication number 20050282324
- Publication date Dec 22, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having gate electrode of staked structure incl...
- Publication number 20050189600
- Publication date Sep 1, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device having a silicide film
- Publication number 20050106801
- Publication date May 19, 2005
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing a semiconductor de...
- Publication number 20050035413
- Publication date Feb 17, 2005
- Kabushiki Kaisha Toshiba
- Kiyotaka Miyano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20050012088
- Publication date Jan 20, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040214386
- Publication date Oct 28, 2004
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having metal silicide films formed on source a...
- Publication number 20040183146
- Publication date Sep 23, 2004
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having silicide film and manufacturing method...
- Publication number 20040102012
- Publication date May 27, 2004
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having gate electrode of stacked structure inc...
- Publication number 20040041213
- Publication date Mar 4, 2004
- KABUSHIKI KAISHA TOSHIBA
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20030201493
- Publication date Oct 30, 2003
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing a semiconductor de...
- Publication number 20030141549
- Publication date Jul 31, 2003
- Kabushiki Kaisha Toshiba
- Kiyotaka Miyano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20030116781
- Publication date Jun 26, 2003
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS semiconductor device having gate insulating film containing nit...
- Publication number 20030119235
- Publication date Jun 26, 2003
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having MIS field effect transistors or three-d...
- Publication number 20020036290
- Publication date Mar 28, 2002
- Kabushiki Kaisha Toshiba
- Satoshi Inaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE OF STACKED STRUCTURE INC...
- Publication number 20020030234
- Publication date Mar 14, 2002
- KAZUYA OHUCHI
- H01 - BASIC ELECTRIC ELEMENTS

Kazuya Ohuchi

Person

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor device including a silicide layer and a dielectric layer

Method of manufacturing silicide layer for semiconductor device

Method of manufacturing a semiconductor device having a silicide film

Method of manufacturing a semiconductor device having a gate electr...

Semiconductor device having metal silicide films formed on source a...

Semiconductor device having gate electrode of stacked structure inc...

Semiconductor device having an injection substance to knock against...

Semiconductor device and method of manufacturing the same

Method of manufacturing a semiconductor device having a silicide film

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor integrated circuit including insulated gate field eff...

Semiconductor device having silicide film

Semiconductor device having gate electrode of stacked structure inc...

Semiconductor device having MIS field effect transistors or three-d...

MOS semiconductor device having gate insulating film containing nit...

Semiconductor device having salicide layer

Semiconductor device and manufacturing method therefor

High-speed semiconductor gain memory cell with minimal area occupancy

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MEMORY DEVICE AND METHOD OF MANUFACTURE THEREOF

SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF...

SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor device containing distorted silicon layer formed on s...

Semiconductor device having gate electrode of staked structure incl...

Method of manufacturing a semiconductor device having a silicide film

Semiconductor device and method of manufacturing a semiconductor de...

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device having metal silicide films formed on source a...

Semiconductor device having silicide film and manufacturing method...

Semiconductor device having gate electrode of stacked structure inc...

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing a semiconductor de...

Semiconductor device and method of manufacturing the same

MOS semiconductor device having gate insulating film containing nit...

Semiconductor device having MIS field effect transistors or three-d...

SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE OF STACKED STRUCTURE INC...