Keith E. Fogel

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Spurious junction prevention via in-situ ion milling
- Patent number 11,765,985
- Issue date Sep 19, 2023
- International Business Machines Corporation
- Vivekananda P. Adiga
Information Patent Grant
Three-dimensionally stretchable single crystalline semiconductor me...
- Patent number 11,697,889
- Issue date Jul 11, 2023
- International Business Machines Corporation
- Alexander Reznicek
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Leakage-free implantation-free ETSOI transistors
- Patent number 11,502,171
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure to enable titanium contact liner on pFET source/drain reg...
- Patent number 11,349,029
- Issue date May 31, 2022
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with ultra low drain leakage
- Patent number 11,201,212
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure to enable titanium contact liner on pFET source/drain reg...
- Patent number 11,201,242
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction fabrication method for forming qubits
- Patent number 11,121,304
- Issue date Sep 14, 2021
- International Business Machines Corporation
- Vivekananda P. Adiga
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Heterojunction photovoltaic device and fabrication method
- Patent number 11,094,842
- Issue date Aug 17, 2021
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional conductive electrode for solar cell
- Patent number 11,011,655
- Issue date May 18, 2021
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide fin segments to prevent strained semiconductor fin...
- Patent number 10,957,694
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet eDRAM
- Patent number 10,937,789
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Alexander Reznicek
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Leakage-free implantation-free ETSOI transistors
- Patent number 10,937,864
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a gallium nitride device
- Patent number 10,892,333
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure germanium tandem junction solar cell
- Patent number 10,763,386
- Issue date Sep 1, 2020
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cone-shaped holes for high efficiency thin film solar cells
- Patent number 10,756,220
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transparent conductive electrode for three dimensional photovoltaic...
- Patent number 10,741,706
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction photovoltaic device and fabrication method
- Patent number 10,672,929
- Issue date Jun 2, 2020
- International Business Machines Corporation
- Stephen W. Bedell
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Leakage-free implantation-free ETSOI transistors
- Patent number 10,651,273
- Issue date May 12, 2020
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep high capacity capacitor for bulk substrates
- Patent number 10,593,659
- Issue date Mar 17, 2020
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable buried antifuse
- Patent number 10,541,202
- Issue date Jan 21, 2020
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickel-silicon fuse for FinFET structures
- Patent number 10,541,203
- Issue date Jan 21, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode with ZnO emitter
- Patent number 10,439,106
- Issue date Oct 8, 2019
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a gallium nitride device
- Patent number 10,424,644
- Issue date Sep 24, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin low defect relaxed silicon germanium layers on bulk silicon su...
- Patent number 10,396,165
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cone-shaped holes for high efficiency thin film solar cells
- Patent number 10,388,808
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Keith E. Fogel
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Porous fin as compliant medium to form dislocation-free heteroepita...
- Patent number 10,366,881
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional conductive electrode for solar cell
- Patent number 10,347,779
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked FinFET anti-fuse
- Patent number 10,340,221
- Issue date Jul 2, 2019
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction photovoltaic device and fabrication method
- Patent number 10,304,984
- Issue date May 28, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Heterojunction photovoltaic device and fabrication method
- Patent number 10,304,985
- Issue date May 28, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SPURIOUS JUNCTION PREVENTION VIA IN-SITU ION MILLING
- Publication number 20230397506
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Vivekananda P. Adiga
Information Patent Application
SPURIOUS JUNCTION PREVENTION VIA IN-SITU ION MILLING
- Publication number 20210399199
- Publication date Dec 23, 2021
- International Business Machines Corporation
- Vivekananda P. Adiga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FABRICATION METHOD FOR FORMING QUBITS
- Publication number 20210151660
- Publication date May 20, 2021
- International Business Machines Corporation
- Vivekananda P. Adiga
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LEAKAGE-FREE IMPLANTATION-FREE ETSOI TRANSISTORS
- Publication number 20210151564
- Publication date May 20, 2021
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE TO ENABLE TITANIUM CONTACT LINER ON pFET SOURCE/DRAIN REG...
- Publication number 20200127132
- Publication date Apr 23, 2020
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONALLY STRETCHABLE SINGLE CRYSTALLINE SEMICONDUCTOR ME...
- Publication number 20200123677
- Publication date Apr 23, 2020
- International Business Machines Corporation
- Alexander Reznicek
- C30 - CRYSTAL GROWTH
Information Patent Application
NANOSHEET eDRAM
- Publication number 20190378842
- Publication date Dec 12, 2019
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE WITH ZnO EMITTER
- Publication number 20190341528
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A GALLIUM NITRIDE DEVICE
- Publication number 20190296113
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONE-SHAPED HOLES FOR HIGH EFFICIENCY THIN FILM SOLAR CELLS
- Publication number 20190259886
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Keith E. Fogel
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
THREE-DIMENSIONAL CONDUCTIVE ELECTRODE FOR SOLAR CELL
- Publication number 20190237597
- Publication date Aug 1, 2019
- KEITH E. FOGEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION PHOTOVOLTAIC DEVICE AND FABRICATION METHOD
- Publication number 20190198696
- Publication date Jun 27, 2019
- International Business Machines Corporation
- STEPHEN W. BEDELL
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
THREE-DIMENSIONALLY STRETCHABLE SINGLE CRYSTALLINE SEMICONDUCTOR ME...
- Publication number 20190186041
- Publication date Jun 20, 2019
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE FIN SEGMENTS TO PREVENT STRAINED SEMICONDUCTOR FIN...
- Publication number 20190172827
- Publication date Jun 6, 2019
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW DEFECT III-V SEMICONDUCTOR TEMPLATE ON POROUS SILICON
- Publication number 20190043956
- Publication date Feb 7, 2019
- GLOBALFOUNDRIES INC.
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH ULTRA LOW DRAIN LEAKAGE
- Publication number 20190006466
- Publication date Jan 3, 2019
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE BURIED ANTIFUSE
- Publication number 20180342457
- Publication date Nov 29, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE GERMANIUM TANDEM JUNCTION SOLAR CELL
- Publication number 20180323330
- Publication date Nov 8, 2018
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONE-SHAPED HOLES FOR HIGH EFFICIENCY THIN FILM SOLAR CELLS
- Publication number 20180315867
- Publication date Nov 1, 2018
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POROUS FIN AS COMPLIANT MEDIUM TO FORM DISLOCATION-FREE HETEROEPITA...
- Publication number 20180308691
- Publication date Oct 25, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CAPACITOR FOR FINNED SEMICONDUCTOR STRUCTURE
- Publication number 20180308993
- Publication date Oct 25, 2018
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NICKEL-SILICON FUSE FOR FINFET STRUCTURES
- Publication number 20180294223
- Publication date Oct 11, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP HIGH CAPACITY CAPACITOR FOR BULK SUBSTRATES
- Publication number 20180286848
- Publication date Oct 4, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP HIGH CAPACITY CAPACITOR FOR BULK SUBSTRATES
- Publication number 20180286849
- Publication date Oct 4, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN LOW DEFECT RELAXED SILICON GERMANIUM LAYERS ON BULK SILICON SU...
- Publication number 20180182720
- Publication date Jun 28, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Resistor And Method To Fabricate Same
- Publication number 20180114828
- Publication date Apr 26, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET RESISTOR AND METHOD TO FABRICATE SAME
- Publication number 20180114826
- Publication date Apr 26, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CAPACITOR FOR FINNED SEMICONDUCTOR STRUCTURE
- Publication number 20180114869
- Publication date Apr 26, 2018
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSPARENT CONDUCTIVE ELECTRODE FOR THREE DIMENSIONAL PHOTOVOLTAIC...
- Publication number 20180108790
- Publication date Apr 19, 2018
- International Business Machines Corporation
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE FIN SEGMENTS TO PREVENT STRAINED SEMICONDUCTOR FIN...
- Publication number 20180096997
- Publication date Apr 5, 2018
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS

Keith E. Fogel

Person

Patents Grantslast 30 patents

Spurious junction prevention via in-situ ion milling

Three-dimensionally stretchable single crystalline semiconductor me...

Leakage-free implantation-free ETSOI transistors

Structure to enable titanium contact liner on pFET source/drain reg...

MOSFET with ultra low drain leakage

Structure to enable titanium contact liner on pFET source/drain reg...

Junction fabrication method for forming qubits

Heterojunction photovoltaic device and fabrication method

Three-dimensional conductive electrode for solar cell

Epitaxial oxide fin segments to prevent strained semiconductor fin...

Nanosheet eDRAM

Leakage-free implantation-free ETSOI transistors

Method of making a gallium nitride device

Heterostructure germanium tandem junction solar cell

Cone-shaped holes for high efficiency thin film solar cells

Transparent conductive electrode for three dimensional photovoltaic...

Heterojunction photovoltaic device and fabrication method

Leakage-free implantation-free ETSOI transistors

Deep high capacity capacitor for bulk substrates

Programmable buried antifuse

Nickel-silicon fuse for FinFET structures

Light emitting diode with ZnO emitter

Method of making a gallium nitride device

Thin low defect relaxed silicon germanium layers on bulk silicon su...

Cone-shaped holes for high efficiency thin film solar cells

Porous fin as compliant medium to form dislocation-free heteroepita...

Three-dimensional conductive electrode for solar cell

Stacked FinFET anti-fuse

Heterojunction photovoltaic device and fabrication method

Heterojunction photovoltaic device and fabrication method

Patents Applicationslast 30 patents

SPURIOUS JUNCTION PREVENTION VIA IN-SITU ION MILLING

SPURIOUS JUNCTION PREVENTION VIA IN-SITU ION MILLING

JUNCTION FABRICATION METHOD FOR FORMING QUBITS

LEAKAGE-FREE IMPLANTATION-FREE ETSOI TRANSISTORS

STRUCTURE TO ENABLE TITANIUM CONTACT LINER ON pFET SOURCE/DRAIN REG...

THREE-DIMENSIONALLY STRETCHABLE SINGLE CRYSTALLINE SEMICONDUCTOR ME...

NANOSHEET eDRAM

LIGHT EMITTING DIODE WITH ZnO EMITTER

METHOD OF MAKING A GALLIUM NITRIDE DEVICE

CONE-SHAPED HOLES FOR HIGH EFFICIENCY THIN FILM SOLAR CELLS

THREE-DIMENSIONAL CONDUCTIVE ELECTRODE FOR SOLAR CELL

HETEROJUNCTION PHOTOVOLTAIC DEVICE AND FABRICATION METHOD

THREE-DIMENSIONALLY STRETCHABLE SINGLE CRYSTALLINE SEMICONDUCTOR ME...

EPITAXIAL OXIDE FIN SEGMENTS TO PREVENT STRAINED SEMICONDUCTOR FIN...

LOW DEFECT III-V SEMICONDUCTOR TEMPLATE ON POROUS SILICON

MOSFET WITH ULTRA LOW DRAIN LEAKAGE

PROGRAMMABLE BURIED ANTIFUSE

HETEROSTRUCTURE GERMANIUM TANDEM JUNCTION SOLAR CELL

CONE-SHAPED HOLES FOR HIGH EFFICIENCY THIN FILM SOLAR CELLS

POROUS FIN AS COMPLIANT MEDIUM TO FORM DISLOCATION-FREE HETEROEPITA...

MIS CAPACITOR FOR FINNED SEMICONDUCTOR STRUCTURE

NICKEL-SILICON FUSE FOR FINFET STRUCTURES

DEEP HIGH CAPACITY CAPACITOR FOR BULK SUBSTRATES

DEEP HIGH CAPACITY CAPACITOR FOR BULK SUBSTRATES

THIN LOW DEFECT RELAXED SILICON GERMANIUM LAYERS ON BULK SILICON SU...

FinFET Resistor And Method To Fabricate Same

FINFET RESISTOR AND METHOD TO FABRICATE SAME

MIS CAPACITOR FOR FINNED SEMICONDUCTOR STRUCTURE

TRANSPARENT CONDUCTIVE ELECTRODE FOR THREE DIMENSIONAL PHOTOVOLTAIC...

EPITAXIAL OXIDE FIN SEGMENTS TO PREVENT STRAINED SEMICONDUCTOR FIN...