Keith Howard Tabakman

Person

Newburgh, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 11,081,583
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact depth control
- Patent number 10,991,796
- Issue date Apr 27, 2021
- GLOBALFOUNDRIES U.S. INC.
- Lin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle of line structures
- Patent number 10,978,566
- Issue date Apr 13, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut first isolation formation with contact forming process mas...
- Patent number 10,825,811
- Issue date Nov 3, 2020
- GLOBALFOUNDRIES Inc.
- Xiaoming Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Third type of metal gate stack for CMOS devices
- Patent number 10,741,554
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with high-k spacer and self-aligned contact capping layer
- Patent number 10,734,233
- Issue date Aug 4, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for aligning integrated circuit layers using m...
- Patent number 10,635,007
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Dongyue Yang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 10,615,279
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle of line structures
- Patent number 10,580,875
- Issue date Mar 3, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a gate structure-to-source/drain conductive cont...
- Patent number 10,297,504
- Issue date May 21, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Third type of metal gate stack for CMOS devices
- Patent number 10,262,996
- Issue date Apr 16, 2019
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 10,243,077
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with robust low-k sidewall spacers and method...
- Patent number 10,192,791
- Issue date Jan 29, 2019
- GLOBALFOUNDRIES Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact line having insulating spacer therein and method of forming...
- Patent number 10,049,985
- Issue date Aug 14, 2018
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 9,917,190
- Issue date Mar 13, 2018
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming MIS contact structures on transistor devices
- Patent number 9,831,123
- Issue date Nov 28, 2017
- GLOBALFOUNDRIES Inc.
- Suraj K. Patil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact line having insulating spacer therein and method of forming...
- Patent number 9,812,400
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Third type of metal gate stack for CMOS devices
- Patent number 9,634,006
- Issue date Apr 25, 2017
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming MIS contact structures on transistor devices in...
- Patent number 9,613,855
- Issue date Apr 4, 2017
- GLOBALFOUNDRIES Inc.
- Suraj K. Patil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming fins of different semiconductor materials on the same subst...
- Patent number 9,536,900
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES INC.
- Ravikumar Ramachandran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
finFET with dielectric isolation after gate module for improved sou...
- Patent number 9,312,364
- Issue date Apr 12, 2016
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned device with enhanced stress and methods of manufacture
- Patent number 9,293,593
- Issue date Mar 22, 2016
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical fuse with bottom contacts
- Patent number 9,171,800
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES, INC.
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pre-gate, source/drain strain layer formation
- Patent number 9,059,286
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned device with enhanced stress and methods of manufacture
- Patent number 9,006,052
- Issue date Apr 14, 2015
- International Business Machines Corporation
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method with greater epitaxial growth on 11...
- Patent number 8,815,656
- Issue date Aug 26, 2014
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing strain-inducing materials in CMOS circuits in a...
- Patent number 8,779,525
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device
- Patent number 8,618,617
- Issue date Dec 31, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device
- Patent number 8,492,234
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing strain-inducing materials in CMOS circuits in a...
- Patent number 8,426,265
- Issue date Apr 23, 2013
- International Business Machines Corporation
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE CUT FIRST ISOLATION FORMATION WITH CONTACT FORMING PROCESS MAS...
- Publication number 20200266286
- Publication date Aug 20, 2020
- GLOBALFOUNDRIES INC.
- Xiaoming Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACT DEPTH CONTROL
- Publication number 20200203480
- Publication date Jun 25, 2020
- GLOBALFOUNDRIES INC.
- Lin HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF LINE STRUCTURES
- Publication number 20200152749
- Publication date May 14, 2020
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR ALIGNING INTEGRATED CIRCUIT LAYERS USING M...
- Publication number 20200152498
- Publication date May 14, 2020
- GLOBALFOUNDRIES INC.
- Dongyue Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20200066908
- Publication date Feb 27, 2020
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH HIGH-K SPACER AND SELF-ALIGNED CONTACT CAPPING LAYER
- Publication number 20190259619
- Publication date Aug 22, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF LINE STRUCTURES
- Publication number 20190221650
- Publication date Jul 18, 2019
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES
- Publication number 20190206866
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING IC STRUCTURE HAVING RECESSED GATE SPACERS AND R...
- Publication number 20190131424
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A GATE STRUCTURE-TO-SOURCE/DRAIN CONDUCTIVE CONT...
- Publication number 20190043758
- Publication date Feb 7, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20180097113
- Publication date Apr 5, 2018
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT LINE HAVING INSULATING SPACER THEREIN AND METHOD OF FORMING...
- Publication number 20170373007
- Publication date Dec 28, 2017
- GLOBALFOUNDRIES INC.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT LINE HAVING INSULATING SPACER THEREIN AND METHOD OF FORMING...
- Publication number 20170330834
- Publication date Nov 16, 2017
- GLOBALFOUNDRIES INC.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING MIS CONTACT STRUCTURES ON TRANSISTOR DEVICES
- Publication number 20170287777
- Publication date Oct 5, 2017
- GLOBALFOUNDRIES INC.
- Suraj K. Patil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES
- Publication number 20170229458
- Publication date Aug 10, 2017
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20160197186
- Publication date Jul 7, 2016
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20160035878
- Publication date Feb 4, 2016
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20150349093
- Publication date Dec 3, 2015
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING FINS OF DIFFERENT SEMICONDUCTOR MATERIALS ON THE SAME SUBST...
- Publication number 20150340381
- Publication date Nov 26, 2015
- International Business Machines Corporation
- Ravikumar Ramachandran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL FUSE WITH BOTTOM CONTACTS
- Publication number 20150255393
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES
- Publication number 20150249086
- Publication date Sep 3, 2015
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-GATE, SOURCE/DRAIN STRAIN LAYER FORMATION
- Publication number 20140213029
- Publication date Jul 31, 2014
- International Business Machines Corporation
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method With Greater Epitaxial Growth on 11...
- Publication number 20140077275
- Publication date Mar 20, 2014
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20130175547
- Publication date Jul 11, 2013
- GLOBALFOUNDRIES, INC.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...
- Publication number 20130161759
- Publication date Jun 27, 2013
- GlobalFoundries, Inc.
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED TRANSISTOR WITH IMPROVED METASTABILITY
- Publication number 20130134444
- Publication date May 30, 2013
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED DEVICE WITH ENHANCED STRESS AND METHODS OF MANUFACTURE
- Publication number 20120228639
- Publication date Sep 13, 2012
- International Business Machines Corporation
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-GATE, SOURCE/DRAIN STRAIN LAYER FORMATION
- Publication number 20120181578
- Publication date Jul 19, 2012
- International Business Machines Corporation
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED TRANSISTOR WITH IMPROVED METASTABILITY
- Publication number 20120112208
- Publication date May 10, 2012
- International Business Machines Corporation
- THOMAS N. ADAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...
- Publication number 20120104507
- Publication date May 3, 2012
- International Business Machines Corporation
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS

Keith Howard Tabakman

Person

Patents Grantslast 30 patents

FinFET with dielectric isolation after gate module for improved sou...

Source/drain contact depth control

Middle of line structures

Gate cut first isolation formation with contact forming process mas...

Third type of metal gate stack for CMOS devices

FinFET with high-k spacer and self-aligned contact capping layer

Apparatus and method for aligning integrated circuit layers using m...

FinFET with dielectric isolation after gate module for improved sou...

Middle of line structures

Methods of forming a gate structure-to-source/drain conductive cont...

Third type of metal gate stack for CMOS devices

FinFET with dielectric isolation after gate module for improved sou...

Semiconductor devices with robust low-k sidewall spacers and method...

Contact line having insulating spacer therein and method of forming...

FinFET with dielectric isolation after gate module for improved sou...

Methods of forming MIS contact structures on transistor devices

Contact line having insulating spacer therein and method of forming...

Third type of metal gate stack for CMOS devices

Methods of forming MIS contact structures on transistor devices in...

Forming fins of different semiconductor materials on the same subst...

finFET with dielectric isolation after gate module for improved sou...

Self aligned device with enhanced stress and methods of manufacture

Electrical fuse with bottom contacts

Pre-gate, source/drain strain layer formation

Self aligned device with enhanced stress and methods of manufacture

Semiconductor device and method with greater epitaxial growth on 11...

Method for growing strain-inducing materials in CMOS circuits in a...

Field effect transistor device

Field effect transistor device

Method for growing strain-inducing materials in CMOS circuits in a...

Patents Applicationslast 30 patents

GATE CUT FIRST ISOLATION FORMATION WITH CONTACT FORMING PROCESS MAS...

SOURCE/DRAIN CONTACT DEPTH CONTROL

MIDDLE OF LINE STRUCTURES

APPARATUS AND METHOD FOR ALIGNING INTEGRATED CIRCUIT LAYERS USING M...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

FINFET WITH HIGH-K SPACER AND SELF-ALIGNED CONTACT CAPPING LAYER

MIDDLE OF LINE STRUCTURES

THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES

METHODS FOR FORMING IC STRUCTURE HAVING RECESSED GATE SPACERS AND R...

METHODS OF FORMING A GATE STRUCTURE-TO-SOURCE/DRAIN CONDUCTIVE CONT...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

CONTACT LINE HAVING INSULATING SPACER THEREIN AND METHOD OF FORMING...

CONTACT LINE HAVING INSULATING SPACER THEREIN AND METHOD OF FORMING...

METHODS OF FORMING MIS CONTACT STRUCTURES ON TRANSISTOR DEVICES

THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

FORMING FINS OF DIFFERENT SEMICONDUCTOR MATERIALS ON THE SAME SUBST...

ELECTRICAL FUSE WITH BOTTOM CONTACTS

THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES

PRE-GATE, SOURCE/DRAIN STRAIN LAYER FORMATION

Semiconductor Device and Method With Greater Epitaxial Growth on 11...

FIELD EFFECT TRANSISTOR DEVICE

METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...

STRESSED TRANSISTOR WITH IMPROVED METASTABILITY

SELF ALIGNED DEVICE WITH ENHANCED STRESS AND METHODS OF MANUFACTURE

PRE-GATE, SOURCE/DRAIN STRAIN LAYER FORMATION

STRESSED TRANSISTOR WITH IMPROVED METASTABILITY

METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...