Kensaku Motoki

Person

Koka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
LED module including flexible printed circuit board with adhesive l...
- Patent number 9,618,190
- Issue date Apr 11, 2017
- SUMITOMO ELECTRIC PRINTED CIRCUITS, INC.
- Kensaku Motoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen-doped gallium nitride crystal substrate
- Patent number 9,305,776
- Issue date Apr 5, 2016
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Oxygen-doped gallium nitride single crystal substrate
- Patent number 8,933,538
- Issue date Jan 13, 2015
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming epitaxial wafer and method for fabricating semic...
- Patent number 8,679,955
- Issue date Mar 25, 2014
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oxygen doping method to gallium nitride single crystal substrate
- Patent number 8,633,093
- Issue date Jan 21, 2014
- Sumitomo Electric Industries Ltd.
- Kensaku Motoki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial wafer, method for manufacturing gallium nitride semicondu...
- Patent number 8,592,289
- Issue date Nov 26, 2013
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride-composite semiconductor laser element, its manufacturing me...
- Patent number 8,502,238
- Issue date Aug 6, 2013
- Sharp Kabushiki Kaisha
- Shigetoshi Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating wafer product and method for fabricating gal...
- Patent number 8,415,180
- Issue date Apr 9, 2013
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 8,404,569
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor laser device including growth-inhibiting film...
- Patent number 8,334,544
- Issue date Dec 18, 2012
- Sharp Kabushiki Kaisha
- Shigetoshi Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlxInyGal-x-yN mixture crystal substrate, method of growing same an...
- Patent number 8,198,177
- Issue date Jun 12, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
AlxInyGa1-x-yN mixture crystal substrate, method of growing same an...
- Patent number 8,067,300
- Issue date Nov 29, 2011
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III nitride light-emitting device
- Patent number 7,968,864
- Issue date Jun 28, 2011
- Sumitomo Electric Industries, Ltd
- Katsushi Akita
- B82 - NANO-TECHNOLOGY
Information Patent Grant
GaN crystal substrate, fabricating method of GaN crystal substrate,...
- Patent number 7,928,447
- Issue date Apr 19, 2011
- Sumitomo Electric Industries, Ltd.
- Toru Matsuoka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor device having oxygen-doped N-type gallium nit...
- Patent number 7,919,831
- Issue date Apr 5, 2011
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light-emitting element and substrate used in formatio...
- Patent number 7,915,635
- Issue date Mar 29, 2011
- Sumitomo Electric Industries, Ltd.
- Katsushi Akita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting device
- Patent number 7,903,710
- Issue date Mar 8, 2011
- Sharp Kabushiki Kaisha
- Takeshi Kamikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor light-emitting device
- Patent number 7,903,707
- Issue date Mar 8, 2011
- Sharp Kabushiki Kaisha
- Takeshi Kamikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for producing structured substrate, structured substrate, me...
- Patent number 7,893,454
- Issue date Feb 22, 2011
- Sony Corporation
- Toshimasa Kobayashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor light-emitting device, method of fabricating...
- Patent number 7,858,992
- Issue date Dec 28, 2010
- Sharp Kabushiki Kaisha
- Yoshihiro Ueta
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 7,858,502
- Issue date Dec 28, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of growing GaN crystal, method of producing single crystal G...
- Patent number 7,794,543
- Issue date Sep 14, 2010
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing nitride-composite semiconductor laser eleme...
- Patent number 7,781,244
- Issue date Aug 24, 2010
- Sharp Kabushiki Kaisha
- Shigetoshi Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting device
- Patent number 7,692,200
- Issue date Apr 6, 2010
- Sharp Kabushiki Kaisha
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen-doped n-type gallium nitride freestanding single crystal sub...
- Patent number 7,667,298
- Issue date Feb 23, 2010
- Sumitomo Electric Industries Ltd.
- Kensaku Motoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
A1xInyGa1-x-yN mixture crystal substrate, method of growing same an...
- Patent number 7,655,960
- Issue date Feb 2, 2010
- Sumito Electric Industries, Ltd.
- Seiji Nakahata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing structured substrate, structured substrate, me...
- Patent number 7,622,318
- Issue date Nov 24, 2009
- Sony Corporation
- Toshimasa Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 7,589,000
- Issue date Sep 15, 2009
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor light-emitting device, method of fabricating...
- Patent number 7,579,627
- Issue date Aug 25, 2009
- Sharp Kabushiki Kaisha
- Yoshihiro Ueta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal GaN substrate, method of growing single crystal GaN...
- Patent number 7,534,310
- Issue date May 19, 2009
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
HEAT DISSIPATION CIRCUIT BOARD AND METHOD FOR PRODUCING HEAT DISSIP...
- Publication number 20180212129
- Publication date Jul 26, 2018
- Sumitomo Electric Industries, Ltd.
- Hirohisa SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED MODULE AND LED LIGHTING FIXTURE
- Publication number 20160178166
- Publication date Jun 23, 2016
- Sumitomo Electric Industries, Ltd.
- Kensaku MOTOKI
- F21 - LIGHTING
Information Patent Application
HEAT DISSIPATION CIRCUIT BOARD AND METHOD FOR PRODUCING SAME
- Publication number 20150369467
- Publication date Dec 24, 2015
- Sumitomo Electric Industries, Ltd.
- Hirohisa SAITO
- F21 - LIGHTING
Information Patent Application
OXYGEN-DOPED GALLIUM NITRIDE CRYSTAL SUBSTRATE
- Publication number 20150194309
- Publication date Jul 9, 2015
- Sumitomo Electric Industries, Ltd.
- Kensaku MOTOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN-DOPED GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20140117377
- Publication date May 1, 2014
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20130244406
- Publication date Sep 19, 2013
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING ME...
- Publication number 20130114633
- Publication date May 9, 2013
- Shigetoshi ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GAL...
- Publication number 20120070929
- Publication date Mar 22, 2012
- Koha Co., Ltd.
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...
- Publication number 20120040511
- Publication date Feb 16, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMIC...
- Publication number 20120003770
- Publication date Jan 5, 2012
- Koha Co., Ltd.
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDU...
- Publication number 20110315998
- Publication date Dec 29, 2011
- Koha Co., Ltd.
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
OXYGEN DOPING METHOD TO GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20110201184
- Publication date Aug 18, 2011
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MAKING THE SAME
- Publication number 20110163323
- Publication date Jul 7, 2011
- SUMITOMO ELECTRIC INDUSTIRES, LTD.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20110065265
- Publication date Mar 17, 2011
- Sumitomo Electric Industries, Ltd.
- Hitoshi KASAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FO...
- Publication number 20100317136
- Publication date Dec 16, 2010
- Sumitomo Electric Industries, Ltd.
- Katsunori Yanashima
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING ME...
- Publication number 20100278205
- Publication date Nov 4, 2010
- SHARP KABUSHIKI KAISHA
- Shigetoshi ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor light-emitting device
- Publication number 20100150199
- Publication date Jun 17, 2010
- Takeshi Kamikawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
GaN Epitaxial Wafer and Semiconductor Devices, and Method of Manufa...
- Publication number 20100148174
- Publication date Jun 17, 2010
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE HAVING OXYGEN-DOPED N-TYPE GALLIUM NIT...
- Publication number 20100102330
- Publication date Apr 29, 2010
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING STRUCTURED SUBSTRATE, STRUCTURED SUBSTRATE, ME...
- Publication number 20100019273
- Publication date Jan 28, 2010
- SONY CORPORATION
- Toshimasa Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20100009526
- Publication date Jan 14, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN single crystal substrate and method of making the same
- Publication number 20090263955
- Publication date Oct 22, 2009
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF FABRICATING...
- Publication number 20090236585
- Publication date Sep 24, 2009
- Sharp Kabushiki Kaisha
- Yoshihiro Ueta
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP-III NITRIDE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURIN...
- Publication number 20090212277
- Publication date Aug 27, 2009
- Sumitomo Electric Industries, Ltd.
- Katsushi Akita
- B82 - NANO-TECHNOLOGY
Information Patent Application
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...
- Publication number 20090215248
- Publication date Aug 27, 2009
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
Oxygen-doped n-type gallium nitride freestanding single crystal sub...
- Publication number 20090108407
- Publication date Apr 30, 2009
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor light-emitting device
- Publication number 20090092166
- Publication date Apr 9, 2009
- Takeshi Kamikawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyG...
- Publication number 20090071394
- Publication date Mar 19, 2009
- SUMITOMO ELECTRONIC INDUSTRIES, LTD.
- Seiji NAKAHATA
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING ME...
- Publication number 20090011530
- Publication date Jan 8, 2009
- SHARP KABUSHIKI KAISHA
- Shigetoshi ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SUBSTRATE USED IN FORMATIO...
- Publication number 20080296610
- Publication date Dec 4, 2008
- Sumitomo Electric Industries, Ltd.
- Katsushi AKITA
- H01 - BASIC ELECTRIC ELEMENTS

Kensaku Motoki

Person

Patents Grantslast 30 patents

LED module including flexible printed circuit board with adhesive l...

Oxygen-doped gallium nitride crystal substrate

Oxygen-doped gallium nitride single crystal substrate

Method for forming epitaxial wafer and method for fabricating semic...

Oxygen doping method to gallium nitride single crystal substrate

Epitaxial wafer, method for manufacturing gallium nitride semicondu...

Nitride-composite semiconductor laser element, its manufacturing me...

Method for fabricating wafer product and method for fabricating gal...

Fabrication method and fabrication apparatus of group III nitride c...

Nitride semiconductor laser device including growth-inhibiting film...

AlxInyGal-x-yN mixture crystal substrate, method of growing same an...

AlxInyGa1-x-yN mixture crystal substrate, method of growing same an...

Group-III nitride light-emitting device

GaN crystal substrate, fabricating method of GaN crystal substrate,...

Nitride semiconductor device having oxygen-doped N-type gallium nit...

Semiconductor light-emitting element and substrate used in formatio...

Nitride semiconductor light-emitting device

Nitride semiconductor light-emitting device

Method for producing structured substrate, structured substrate, me...

Nitride semiconductor light-emitting device, method of fabricating...

Fabrication method and fabrication apparatus of group III nitride c...

Method of growing GaN crystal, method of producing single crystal G...

Method of manufacturing nitride-composite semiconductor laser eleme...

Nitride semiconductor light-emitting device

Oxygen-doped n-type gallium nitride freestanding single crystal sub...

A1xInyGa1-x-yN mixture crystal substrate, method of growing same an...

Method for producing structured substrate, structured substrate, me...

Fabrication method and fabrication apparatus of group III nitride c...

Nitride semiconductor light-emitting device, method of fabricating...

Single crystal GaN substrate, method of growing single crystal GaN...

Patents Applicationslast 30 patents

HEAT DISSIPATION CIRCUIT BOARD AND METHOD FOR PRODUCING HEAT DISSIP...

LED MODULE AND LED LIGHTING FIXTURE

HEAT DISSIPATION CIRCUIT BOARD AND METHOD FOR PRODUCING SAME

OXYGEN-DOPED GALLIUM NITRIDE CRYSTAL SUBSTRATE

OXYGEN-DOPED GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING ME...

METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GAL...

AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...

METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMIC...

EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDU...

OXYGEN DOPING METHOD TO GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE

GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MAKING THE SAME

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FO...

NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING ME...

Nitride semiconductor light-emitting device

GaN Epitaxial Wafer and Semiconductor Devices, and Method of Manufa...

NITRIDE SEMICONDUCTOR DEVICE HAVING OXYGEN-DOPED N-TYPE GALLIUM NIT...

METHOD FOR PRODUCING STRUCTURED SUBSTRATE, STRUCTURED SUBSTRATE, ME...

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

GaN single crystal substrate and method of making the same

NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF FABRICATING...

GROUP-III NITRIDE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURIN...

AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...

Oxygen-doped n-type gallium nitride freestanding single crystal sub...

Nitride semiconductor light-emitting device

AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyG...

NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING ME...

SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SUBSTRATE USED IN FORMATIO...