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Kikuo Yamabe
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Yokohama, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Method for insulating film formation, storage medium from which inf...
Patent number
8,034,179
Issue date
Oct 11, 2011
Tokyo Electron Limited
Yoshiro Kabe
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Method of forming silicon oxide film and method of production of se...
Patent number
8,026,187
Issue date
Sep 27, 2011
Tokyo Electron Limited
Yoshiro Kabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device manufacturing method, manufacturing apparatus,...
Patent number
6,185,472
Issue date
Feb 6, 2001
Kabushiki Kaisha Toshiba
Shinji Onga
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Grant
Semiconductor substrate and method of processing the same
Patent number
5,885,905
Issue date
Mar 23, 1999
Kabushiki Kaisha Toshiba
Souichi Nadahara
C30 - CRYSTAL GROWTH
Information
Patent Grant
Semiconductor device having an extrinsic gettering film
Patent number
5,757,063
Issue date
May 26, 1998
Kabushiki Kaisha Toshiba
Hiroshi Tomita
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device and method for manufacturing the same
Patent number
5,698,891
Issue date
Dec 16, 1997
Kabushiki Kaisha Toshiba
Hiroshi Tomita
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of screening semiconductor device
Patent number
5,543,334
Issue date
Aug 6, 1996
Kabushiki Kaisha Toshiba
Ichiro Yoshii
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device with monocrystalline gate insulating film
Patent number
5,514,904
Issue date
May 7, 1996
Kabushiki Kaisha Toshiba
Shinji Onga
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for heat treating a semiconductor substrate to reduce defects
Patent number
5,502,010
Issue date
Mar 26, 1996
Kabushiki Kaisha Toshiba
Souichi Nadahara
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for fabricating semiconductor device in which threshold volt...
Patent number
5,489,542
Issue date
Feb 6, 1996
Kabushiki Kaisha Toshiba
Hiroshi Iwai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method and apparatus for heat treating
Patent number
5,431,561
Issue date
Jul 11, 1995
Kabushiki Kaisha Toshiba
Kikuo Yamabe
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of manufacturing a semiconductor device
Patent number
5,360,748
Issue date
Nov 1, 1994
Kabushiki Kaisha Toshiba
Soichi Nadahara
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing semiconductor devices using an adsorption e...
Patent number
5,354,710
Issue date
Oct 11, 1994
Kabushiki Kaisha Toshiba
Hideichi Kawaguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method and apparatus for heat treating
Patent number
5,297,956
Issue date
Mar 29, 1994
Kabushiki Kaisha Toshiba
Kikuo Yamabe
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of thermally processing semiconductor wafers and an apparatu...
Patent number
5,259,883
Issue date
Nov 9, 1993
Kabushiki Kaisha Toshiba
Kikuo Yamabe
C30 - CRYSTAL GROWTH
Information
Patent Grant
Substrate heating method utilizing heating element control to achie...
Patent number
5,239,614
Issue date
Aug 24, 1993
Tokyo Electron Sagami Limited
Seiko Ueno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device with nitrided gate insulating film
Patent number
5,237,188
Issue date
Aug 17, 1993
Kabushiki Kaisha Toshiba
Hiroshi Iwai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High dielectric capacitor having low current leakage
Patent number
5,189,503
Issue date
Feb 23, 1993
Kabushiki Kaisha Toshiba
Kyoichi Suguro
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating a semiconductor device by reducing the impuri...
Patent number
5,173,440
Issue date
Dec 22, 1992
Kabushiki Kaisha Toshiba
Yoshitaka Tsunashima
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device having buried element isolation region
Patent number
5,073,813
Issue date
Dec 17, 1991
Kabushiki Kaisha Toshiba
Shigeru Morita
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing an MOS capacitor
Patent number
4,735,824
Issue date
Apr 5, 1988
Kabushiki Kaisha Toshiba
Kikuo Yamabe
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
METHOD FOR INSULATING FILM FORMATION, STORAGE MEDIUM FROM WHICH INF...
Publication number
20110039418
Publication date
Feb 17, 2011
TOKYO ELECTRON LIMITED
Yoshiro Kabe
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
METHOD OF FORMING SILICON OXIDE FILM AND METHOD OF PRODUCTION OF SE...
Publication number
20100184267
Publication date
Jul 22, 2010
TOKYO ELECTRON LIMITED
Yoshiro Kabe
H01 - BASIC ELECTRIC ELEMENTS