Kiuchul Hwang

Person

Amherst, NH, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure having both enhancement mode group III-N hi...
- Patent number 11,594,627
- Issue date Feb 28, 2023
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion mode high electron mobility field effect transistor (HEMT...
- Patent number 11,362,190
- Issue date Jun 14, 2022
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material growth of a high resistivity nitride buffer...
- Patent number 11,127,596
- Issue date Sep 21, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having both enhancement mode group III-N hi...
- Patent number 11,101,378
- Issue date Aug 24, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor structure having notched mesa
- Patent number 10,797,129
- Issue date Oct 6, 2020
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling the amount of radiation having a predetermin...
- Patent number 10,541,148
- Issue date Jan 21, 2020
- Raytheon Company
- Kezia Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor structure having notched mesa
- Patent number 10,134,839
- Issue date Nov 20, 2018
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having T-shaped electrodes
- Patent number 9,887,089
- Issue date Feb 6, 2018
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integrated circuit having enhancement mode/depletion mod...
- Patent number 7,626,218
- Issue date Dec 1, 2009
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having improved field plates
- Patent number 7,498,223
- Issue date Mar 3, 2009
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of a field effect transistor with materialist...
- Patent number 7,361,536
- Issue date Apr 22, 2008
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 7,183,592
- Issue date Feb 27, 2007
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEPLETION MODE HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR (HEMT...
- Publication number 20210367055
- Publication date Nov 25, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...
- Publication number 20210351288
- Publication date Nov 11, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL MANAGEMENT STRUCTURES FOR NITRIDE-BASED HEAT GENERATING SEM...
- Publication number 20210320045
- Publication date Oct 14, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MATERIAL GROWTH OF A HIGH RESISTIVITY NITRIDE BUFFER...
- Publication number 20210050216
- Publication date Feb 18, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...
- Publication number 20200328296
- Publication date Oct 15, 2020
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING THE AMOUNT OF RADIATION HAVING A PREDETERMIN...
- Publication number 20190198346
- Publication date Jun 27, 2019
- Raytheon Company
- Kezia Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Structure Having Notched Mesa
- Publication number 20180286947
- Publication date Oct 4, 2018
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING PATTERNED TANTALUM NITRIDE (TaN) RESISTORS ON DI...
- Publication number 20180019298
- Publication date Jan 18, 2018
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures Having T-Shaped Electrodes
- Publication number 20170025278
- Publication date Jan 26, 2017
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Structure Having Notched Mesa
- Publication number 20160329420
- Publication date Nov 10, 2016
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES HAVING T-SHAPED ELECTRODES
- Publication number 20150235856
- Publication date Aug 20, 2015
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS HAVING TEMPERATURE STABLE SCHOTTKY CONTACT METALS
- Publication number 20120273852
- Publication date Nov 1, 2012
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELECTIVE DEPOSITION OF DIELECTRIC LAYERS ON SEMICONDUCT...
- Publication number 20110053336
- Publication date Mar 3, 2011
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS HAVING TEMPERATURE STABLE SCHOTTKY CONTACT METALS
- Publication number 20100244105
- Publication date Sep 30, 2010
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING IMPROVED FIELD PLATES
- Publication number 20070166888
- Publication date Jul 19, 2007
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices having improved field plates
- Publication number 20060223293
- Publication date Oct 5, 2006
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolithic integrated circuit having enhanced breakdown voltage
- Publication number 20060175631
- Publication date Aug 10, 2006
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolithic integrated circuit having enhancement mode/depletion mod...
- Publication number 20060175632
- Publication date Aug 10, 2006
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20060102932
- Publication date May 18, 2006
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20050263789
- Publication date Dec 1, 2005
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor devices having a substrate whi...
- Publication number 20050258459
- Publication date Nov 24, 2005
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS

Kiuchul Hwang

Person

Patents Grantslast 30 patents

Semiconductor structure having both enhancement mode group III-N hi...

Depletion mode high electron mobility field effect transistor (HEMT...

Semiconductor material growth of a high resistivity nitride buffer...

Semiconductor structure having both enhancement mode group III-N hi...

Field effect transistor structure having notched mesa

Method for controlling the amount of radiation having a predetermin...

Field effect transistor structure having notched mesa

Semiconductor structures having T-shaped electrodes

Monolithic integrated circuit having enhancement mode/depletion mod...

Semiconductor devices having improved field plates

Method of fabrication of a field effect transistor with materialist...

Field effect transistor

Patents Applicationslast 30 patents

DEPLETION MODE HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR (HEMT...

SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...

THERMAL MANAGEMENT STRUCTURES FOR NITRIDE-BASED HEAT GENERATING SEM...

SEMICONDUCTOR MATERIAL GROWTH OF A HIGH RESISTIVITY NITRIDE BUFFER...

SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...

METHOD FOR CONTROLLING THE AMOUNT OF RADIATION HAVING A PREDETERMIN...

Field Effect Transistor Structure Having Notched Mesa

METHOD FOR FORMING PATTERNED TANTALUM NITRIDE (TaN) RESISTORS ON DI...

Semiconductor Structures Having T-Shaped Electrodes

Field Effect Transistor Structure Having Notched Mesa

SEMICONDUCTOR STRUCTURES HAVING T-SHAPED ELECTRODES

TRANSISTORS HAVING TEMPERATURE STABLE SCHOTTKY CONTACT METALS

METHOD FOR SELECTIVE DEPOSITION OF DIELECTRIC LAYERS ON SEMICONDUCT...

TRANSISTORS HAVING TEMPERATURE STABLE SCHOTTKY CONTACT METALS

SEMICONDUCTOR DEVICES HAVING IMPROVED FIELD PLATES

Semiconductor devices having improved field plates

Monolithic integrated circuit having enhanced breakdown voltage

Monolithic integrated circuit having enhancement mode/depletion mod...

Field effect transistor

Field effect transistor

Method for fabricating semiconductor devices having a substrate whi...