Klaus-Dieter Ufert

Person

Unterschleibheim, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating an integrated electronic circuit with program...
- Patent number 8,492,810
- Issue date Jul 23, 2013
- Qimonda AG
- Wolfgang Raberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit
- Patent number 8,063,394
- Issue date Nov 22, 2011
- Qimonda AG
- Dieter Andres
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for producing memory having a solid electrolyte material region
- Patent number 8,062,694
- Issue date Nov 22, 2011
- Adesto Technology Corporation
- Cay-Uwe Pinnow
- G11 - INFORMATION STORAGE
Information Patent Grant
Sputter deposition method for forming integrated circuit
- Patent number 8,038,850
- Issue date Oct 18, 2011
- Qimonda AG
- Klaus Ufert
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Memory element using reversible switching between SP2 and SP3 hybri...
- Patent number 8,030,637
- Issue date Oct 4, 2011
- Qimonda AG
- Klaus-Dieter Ufert
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory element with positive temperature coefficient layer
- Patent number 7,983,068
- Issue date Jul 19, 2011
- Qimonda AG
- Klaus-Dieter Ufert
- G11 - INFORMATION STORAGE
Information Patent Grant
Carbon filament memory and fabrication method
- Patent number 7,894,253
- Issue date Feb 22, 2011
- Qimonda AG
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Grant
Increased switching cycle resistive memory element
- Patent number 7,881,092
- Issue date Feb 1, 2011
- Rising Silicon, Inc.
- Klaus Ufert
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for producing memory having a solid electrolyte material region
- Patent number 7,829,134
- Issue date Nov 9, 2010
- Adesto Technology Corporation
- Cay-Uwe Pinnow
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit having a resistive memory
- Patent number 7,787,279
- Issue date Aug 31, 2010
- Qimonda AG
- Thomas D. Happ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an integrated circuit including an electro...
- Patent number 7,749,805
- Issue date Jul 6, 2010
- Qimonda AG
- Cay-Uwe Pinnow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory element and method of fabrication
- Patent number 7,741,630
- Issue date Jun 22, 2010
- Qimonda AG
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a CBRAM semiconductor memory
- Patent number 7,718,537
- Issue date May 18, 2010
- Qimonda AG
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell, memory device and method for the production thereof
- Patent number 7,655,939
- Issue date Feb 2, 2010
- Infineon Technologies AG
- Klaus-Dieter Ufert
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistive memory cell with a programmable resistance l...
- Patent number 7,649,242
- Issue date Jan 19, 2010
- Infineon Technologies AG
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid electrolyte switching element
- Patent number 7,613,028
- Issue date Nov 3, 2009
- Infineon Technologies AG
- Cay-Uwe Pinnow
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including resistivity changing memory cells
- Patent number 7,538,411
- Issue date May 26, 2009
- Infineon Technologies AG
- Josef Willer
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory element with shortened erase time
- Patent number 7,511,294
- Issue date Mar 31, 2009
- Infineon Technologies AG
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving the thermal characteristics of semiconductor m...
- Patent number 7,483,293
- Issue date Jan 27, 2009
- Infineon Technologies AG
- Cay-Uwe Pinnow
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistively switching memory
- Patent number 7,442,605
- Issue date Oct 28, 2008
- Infineon Technologies AG
- Klaus Dieter Ufert
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating a nonvolatile memory element and a nonvolati...
- Patent number 7,410,868
- Issue date Aug 12, 2008
- Infineon Technologies AG
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a resistive memory
- Patent number 7,368,314
- Issue date May 6, 2008
- Infineon Technologies AG
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory cell, method for fabricating it and semiconduc...
- Patent number 7,358,520
- Issue date Apr 15, 2008
- Infineon Technologies AG
- Cay-Uwe Pinnow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory
- Patent number 7,345,295
- Issue date Mar 18, 2008
- Infineon Technologies AG
- Klaus-Dieter Ufert
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge trapping semiconductor memory element with improved trapping...
- Patent number 7,312,491
- Issue date Dec 25, 2007
- Infineon Technologies, AG
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile, resistive memory cell based on metal oxide nanopartic...
- Patent number 7,297,975
- Issue date Nov 20, 2007
- Infineon Technologies AG
- Klaus Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Opto-electronic memory element on the basis of organic metalloporph...
- Patent number 7,265,381
- Issue date Sep 4, 2007
- Infineon Technologies, AG
- Klaus Ufert
- G11 - INFORMATION STORAGE
Information Patent Grant
Thin-film solar module with electrically conductive substrate and m...
- Patent number 5,558,723
- Issue date Sep 24, 1996
- Siemens Solar GmbH
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING MEMORY HAVING A SOLID ELECTROLYTE MATERIAL REGION
- Publication number 20110037014
- Publication date Feb 17, 2011
- ADESTO TECHNOLOGY CORPORATION
- Cay-Uwe Pinnow
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Circuit
- Publication number 20100084741
- Publication date Apr 8, 2010
- Dieter Andres
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Memory
- Publication number 20090272958
- Publication date Nov 5, 2009
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Memory Element and Method of Fabrication
- Publication number 20090200533
- Publication date Aug 13, 2009
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Element with Positive Temperature Coefficient Layer
- Publication number 20090201716
- Publication date Aug 13, 2009
- Klaus-Dieter Ufert
- G11 - INFORMATION STORAGE
Information Patent Application
Non-Volatile Memory Element with Improved Temperature Stability
- Publication number 20090200535
- Publication date Aug 13, 2009
- Klaus-Dieter Ufert
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Memory Element
- Publication number 20090140232
- Publication date Jun 4, 2009
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistively switching semiconductor memory
- Publication number 20090045387
- Publication date Feb 19, 2009
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Increased Switching Cycle Resistive Memory Element
- Publication number 20090027944
- Publication date Jan 29, 2009
- Klaus Ufert
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE SWITCHING ELEMENT
- Publication number 20080278988
- Publication date Nov 13, 2008
- Klaus Ufert
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE SWITCHING ELEMENT
- Publication number 20080247215
- Publication date Oct 9, 2008
- Klaus Ufert
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED MEMORY
- Publication number 20080247214
- Publication date Oct 9, 2008
- Klaus Ufert
- G11 - INFORMATION STORAGE
Information Patent Application
Carbon filament memory and method for fabrication
- Publication number 20080102278
- Publication date May 1, 2008
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Application
Carbon filament memory and fabrication method
- Publication number 20080099752
- Publication date May 1, 2008
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Application
Information storage elements and methods of manufacture thereof
- Publication number 20080070162
- Publication date Mar 20, 2008
- Klaus-Dieter Ufert
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable non-volatile memory cell
- Publication number 20080029803
- Publication date Feb 7, 2008
- Infineon Technologies AG
- Klaus Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sputter deposition apparatus and method
- Publication number 20070295597
- Publication date Dec 27, 2007
- Klaus Ufert
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CBRAM cell with a reversible conductive bridging mechanism
- Publication number 20070274120
- Publication date Nov 29, 2007
- Infineon Technologies AG
- Cay-Uwe Pinnow
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE
- Publication number 20070267621
- Publication date Nov 22, 2007
- Infineon Technologies AG
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable resistive memory cell with a programmable resistance l...
- Publication number 20070267667
- Publication date Nov 22, 2007
- Infineon Technologies AG
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING RESISTIVITY CHANGING MEMORY CELLS
- Publication number 20070254428
- Publication date Nov 1, 2007
- Josef Willer
- G11 - INFORMATION STORAGE
Information Patent Application
Method of fabricating an integrated electronic circuit with program...
- Publication number 20070200155
- Publication date Aug 30, 2007
- Infineon Technologies AG
- Wolfgang Raberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile, resistive memory cell based on metal oxide nanopartic...
- Publication number 20070045704
- Publication date Mar 1, 2007
- Klaus Ufert
- B82 - NANO-TECHNOLOGY
Information Patent Application
Intergrated semiconductor memory and method for producing an integr...
- Publication number 20060291268
- Publication date Dec 28, 2006
- Thomas D. Happ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cell, memory device and method for the production thereof
- Publication number 20060255329
- Publication date Nov 16, 2006
- Klaus-Dieter Ufert
- G11 - INFORMATION STORAGE
Information Patent Application
Method for fabricating a nonvolatile memory element and a nonvolati...
- Publication number 20060234418
- Publication date Oct 19, 2006
- Klaus-Dieter Ufert
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for manufacturing an electrolyte material layer in semicondu...
- Publication number 20060205110
- Publication date Sep 14, 2006
- Infineon Technologies AG
- Cay-Uwe Pinnow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a resistively switching nonvolatile memory cell
- Publication number 20060199377
- Publication date Sep 7, 2006
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge trapping semiconductor memory element with improved trapping...
- Publication number 20060197141
- Publication date Sep 7, 2006
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive memory element with shortened erase time
- Publication number 20060181920
- Publication date Aug 17, 2006
- Klaus-Dieter Ufert
- H01 - BASIC ELECTRIC ELEMENTS

Klaus-Dieter Ufert

Person

Patents Grantslast 30 patents

Method of fabricating an integrated electronic circuit with program...

Integrated circuit

Method for producing memory having a solid electrolyte material region

Sputter deposition method for forming integrated circuit

Memory element using reversible switching between SP2 and SP3 hybri...

Memory element with positive temperature coefficient layer

Carbon filament memory and fabrication method

Increased switching cycle resistive memory element

Method for producing memory having a solid electrolyte material region

Integrated circuit having a resistive memory

Method for manufacturing an integrated circuit including an electro...

Resistive memory element and method of fabrication

Method for manufacturing a CBRAM semiconductor memory

Memory cell, memory device and method for the production thereof

Programmable resistive memory cell with a programmable resistance l...

Solid electrolyte switching element

Integrated circuit including resistivity changing memory cells

Resistive memory element with shortened erase time

Method for improving the thermal characteristics of semiconductor m...

Resistively switching memory

Method for fabricating a nonvolatile memory element and a nonvolati...

Method for fabricating a resistive memory

Semiconductor memory cell, method for fabricating it and semiconduc...

Semiconductor memory

Charge trapping semiconductor memory element with improved trapping...

Non-volatile, resistive memory cell based on metal oxide nanopartic...

Opto-electronic memory element on the basis of organic metalloporph...

Thin-film solar module with electrically conductive substrate and m...

Patents Applicationslast 30 patents

METHOD FOR PRODUCING MEMORY HAVING A SOLID ELECTROLYTE MATERIAL REGION

Integrated Circuit

Resistive Memory

Resistive Memory Element and Method of Fabrication

Memory Element with Positive Temperature Coefficient Layer

Non-Volatile Memory Element with Improved Temperature Stability

Resistive Memory Element

Resistively switching semiconductor memory

Increased Switching Cycle Resistive Memory Element

RESISTIVE SWITCHING ELEMENT

RESISTIVE SWITCHING ELEMENT

INTEGRATED MEMORY

Carbon filament memory and method for fabrication

Carbon filament memory and fabrication method

Information storage elements and methods of manufacture thereof

Programmable non-volatile memory cell

Sputter deposition apparatus and method

CBRAM cell with a reversible conductive bridging mechanism

RESISTIVE MEMORY DEVICE

Programmable resistive memory cell with a programmable resistance l...

INTEGRATED CIRCUIT INCLUDING RESISTIVITY CHANGING MEMORY CELLS

Method of fabricating an integrated electronic circuit with program...

Non-volatile, resistive memory cell based on metal oxide nanopartic...

Intergrated semiconductor memory and method for producing an integr...

Memory cell, memory device and method for the production thereof

Method for fabricating a nonvolatile memory element and a nonvolati...

Method for manufacturing an electrolyte material layer in semicondu...

Method for fabricating a resistively switching nonvolatile memory cell

Charge trapping semiconductor memory element with improved trapping...

Resistive memory element with shortened erase time