Konstantin V. Loiko

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Split gate device with doped region and method therefor
- Patent number 10,026,820
- Issue date Jul 17, 2018
- NXP USA, INC.
- Weize Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming split gate memory with improved reliability
- Patent number 9,847,397
- Issue date Dec 19, 2017
- NXP USA, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a non-volatile memory (NVM) with trap-up reduction
- Patent number 9,548,314
- Issue date Jan 17, 2017
- NXP USA, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming split gate memory with improved reliability
- Patent number 9,397,176
- Issue date Jul 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a split gate non-volatile memory (NVM) cell
- Patent number 9,379,222
- Issue date Jun 28, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate nanocrystal memory integration
- Patent number 9,343,314
- Issue date May 17, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate non-volatile memory cells having gap protection zones
- Patent number 9,331,160
- Issue date May 3, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a split gate non-volatile memory (NVM) cell and a...
- Patent number 9,257,445
- Issue date Feb 9, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory with discrete storage elements
- Patent number 9,202,930
- Issue date Dec 1, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Split gate nanocrystal memory integration
- Patent number 9,111,867
- Issue date Aug 18, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with different threshold voltages
- Patent number 8,962,410
- Issue date Feb 24, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate non-volatile memory cell
- Patent number 8,962,416
- Issue date Feb 24, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation for SOI structures combining sidewall spac...
- Patent number 8,766,362
- Issue date Jul 1, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device featuring a gate stressor...
- Patent number 8,587,039
- Issue date Nov 19, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation for SOI structures combining sidewall spac...
- Patent number 8,236,638
- Issue date Aug 7, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate non-volatile memory cell and method
- Patent number 8,035,156
- Issue date Oct 11, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor structure useful in making a split...
- Patent number 7,985,649
- Issue date Jul 26, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device featuring a gate stressor...
- Patent number 7,960,243
- Issue date Jun 14, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a stressed non-volatile memory device
- Patent number 7,960,267
- Issue date Jun 14, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stressed semiconductor device and method for making
- Patent number 7,821,055
- Issue date Oct 26, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Split-gate thin film storage NVM cell with reduced load-up/trap-up...
- Patent number 7,811,886
- Issue date Oct 12, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a transistor with a stressor
- Patent number 7,799,650
- Issue date Sep 21, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Xiangzheng Bo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selective removal of a layer
- Patent number 7,521,314
- Issue date Apr 21, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Dharmesh Jawarani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPLIT GATE DEVICE WITH DOPED REGION AND METHOD THEREFOR
- Publication number 20170278937
- Publication date Sep 28, 2017
- FREESCALE SEMICONDUCTOR, INC.
- WEIZE CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY
- Publication number 20160300919
- Publication date Oct 13, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY
- Publication number 20160035848
- Publication date Feb 4, 2016
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE NANOCRYSTAL MEMORY INTEGRATION
- Publication number 20150348786
- Publication date Dec 3, 2015
- KONSTANTIN V. LOIKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SPLIT GATE NON-VOLATILE MEMORY (NVM) CELL AND A...
- Publication number 20150348985
- Publication date Dec 3, 2015
- KONSTANTIN V. LOIKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SPLIT GATE NON-VOLATILE MEMORY (NVM) CELL
- Publication number 20150349096
- Publication date Dec 3, 2015
- BRIAN A. WINSTEAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Gate Nanocrystal Memory Integration
- Publication number 20150060989
- Publication date Mar 5, 2015
- Freescale Seminconductor, Inc.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split-Gate Non-Volatile Memory Cells Having Gap Protection Zones
- Publication number 20150054048
- Publication date Feb 26, 2015
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE NON-VOLATILE MEMORY CELL
- Publication number 20150035034
- Publication date Feb 5, 2015
- BRIAN A. WINSTEAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPAC...
- Publication number 20140299935
- Publication date Oct 9, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES
- Publication number 20130109141
- Publication date May 2, 2013
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY WITH DISCRETE STORAGE ELEMENTS
- Publication number 20120292683
- Publication date Nov 22, 2012
- Konstantin V. Loiko
- G11 - INFORMATION STORAGE
Information Patent Application
SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPAC...
- Publication number 20120273889
- Publication date Nov 1, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE FEATURING A GATE STRESSOR...
- Publication number 20110220975
- Publication date Sep 15, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR STRUCTURE USEFUL IN MAKING A SPLIT...
- Publication number 20110165749
- Publication date Jul 7, 2011
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A STRESSED NON-VOLATILE MEMORY DEVICE
- Publication number 20100248466
- Publication date Sep 30, 2010
- Konstantin V. Loiko
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRESSED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING
- Publication number 20100244121
- Publication date Sep 30, 2010
- Konstantin V. Loiko
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPLIT-GATE NON-VOLATILE MEMORY CELL AND METHOD
- Publication number 20100078703
- Publication date Apr 1, 2010
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A TRANSISTOR WITH A STRESSOR
- Publication number 20090042351
- Publication date Feb 12, 2009
- Xiangzheng Bo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE FEATURING A GATE STRESSOR...
- Publication number 20080299717
- Publication date Dec 4, 2008
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELECTIVE REMOVAL OF A LAYER
- Publication number 20080261385
- Publication date Oct 23, 2008
- Dharmesh Jawarani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation for SOI structures combining sidewall spac...
- Publication number 20080261361
- Publication date Oct 23, 2008
- Freescale Semiconductor, Inc.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split-gate thin film storage NVM cell with reduced load-up/trap-up...
- Publication number 20080188052
- Publication date Aug 7, 2008
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS

Konstantin V. Loiko

Person

Patents Grantslast 30 patents

Split gate device with doped region and method therefor

Method of forming split gate memory with improved reliability

Method of making a non-volatile memory (NVM) with trap-up reduction

Method of forming split gate memory with improved reliability

Method of making a split gate non-volatile memory (NVM) cell

Split gate nanocrystal memory integration

Split-gate non-volatile memory cells having gap protection zones

Method of making a split gate non-volatile memory (NVM) cell and a...

Memory with discrete storage elements

Split gate nanocrystal memory integration

Transistors with different threshold voltages

Split gate non-volatile memory cell

Shallow trench isolation for SOI structures combining sidewall spac...

Method of forming a semiconductor device featuring a gate stressor...

Shallow trench isolation for SOI structures combining sidewall spac...

Split-gate non-volatile memory cell and method

Method of making a semiconductor structure useful in making a split...

Method of forming a semiconductor device featuring a gate stressor...

Method for making a stressed non-volatile memory device

Stressed semiconductor device and method for making

Split-gate thin film storage NVM cell with reduced load-up/trap-up...

Method for making a transistor with a stressor

Method for selective removal of a layer

Patents Applicationslast 30 patents

SPLIT GATE DEVICE WITH DOPED REGION AND METHOD THEREFOR

METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY

METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY

SPLIT GATE NANOCRYSTAL MEMORY INTEGRATION

METHOD OF MAKING A SPLIT GATE NON-VOLATILE MEMORY (NVM) CELL AND A...

METHOD OF MAKING A SPLIT GATE NON-VOLATILE MEMORY (NVM) CELL

Split Gate Nanocrystal Memory Integration

Split-Gate Non-Volatile Memory Cells Having Gap Protection Zones

SPLIT GATE NON-VOLATILE MEMORY CELL

SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPAC...

TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES

MEMORY WITH DISCRETE STORAGE ELEMENTS

SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPAC...

METHOD OF FORMING A SEMICONDUCTOR DEVICE FEATURING A GATE STRESSOR...

METHOD OF MAKING A SEMICONDUCTOR STRUCTURE USEFUL IN MAKING A SPLIT...

METHOD FOR MAKING A STRESSED NON-VOLATILE MEMORY DEVICE

STRESSED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING

SPLIT-GATE NON-VOLATILE MEMORY CELL AND METHOD

METHOD FOR MAKING A TRANSISTOR WITH A STRESSOR

METHOD OF FORMING A SEMICONDUCTOR DEVICE FEATURING A GATE STRESSOR...

METHOD FOR SELECTIVE REMOVAL OF A LAYER

Shallow trench isolation for SOI structures combining sidewall spac...

Split-gate thin film storage NVM cell with reduced load-up/trap-up...