Kuniyoshi Yoshikawa

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing semiconductor memory
- Patent number 6,632,714
- Issue date Oct 14, 2003
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor Memory
- Patent number 6,335,554
- Issue date Jan 1, 2002
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device with a plurality of memory cells connec...
- Patent number 5,734,612
- Issue date Mar 31, 1998
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for manufacturing contact hole for a nonvolatile semiconduct...
- Patent number 5,679,590
- Issue date Oct 21, 1997
- Kabushiki Kaisha Toshiba
- Seiichi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a multi-layer channel structure
- Patent number 5,586,073
- Issue date Dec 17, 1996
- Kabushiki Kaisha Toshiba
- Yohei Hiura
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory device with a small distribution...
- Patent number 5,444,655
- Issue date Aug 22, 1995
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory transistor having increased interelectrode capacitance
- Patent number 5,378,910
- Issue date Jan 3, 1995
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory having improved erasure character...
- Patent number 5,365,098
- Issue date Nov 15, 1994
- Kabushiki Kaisha Toshiba
- Junichi Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor device
- Patent number 5,304,829
- Issue date Apr 19, 1994
- Kabushiki Kaisha Toshiba
- Seiichi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically erasable memory device having erase-electrode connecte...
- Patent number 5,229,632
- Issue date Jul 20, 1993
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a floating gate type nonvolatile memory cel...
- Patent number 5,210,044
- Issue date May 11, 1993
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor device with a trench isolator
- Patent number 5,159,431
- Issue date Oct 27, 1992
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate electrode consisting of a plural...
- Patent number 5,053,840
- Issue date Oct 1, 1991
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device capable of preventing data of non-selec...
- Patent number 5,025,417
- Issue date Jun 18, 1991
- Kabushiki Kaisha Toshiba
- Junichi Miyamoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a nonvolatile semiconductor device
- Patent number 5,015,601
- Issue date May 14, 1991
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory device and method of the manufact...
- Patent number 4,929,988
- Issue date May 29, 1990
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 4,925,807
- Issue date May 15, 1990
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for isolating a semiconductor element
- Patent number 4,885,261
- Issue date Dec 5, 1989
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,881,108
- Issue date Nov 14, 1989
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY
- Publication number 20030034518
- Publication date Feb 20, 2003
- Kabushiki Kaisha Toshiba
- Kuniyoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS

Kuniyoshi Yoshikawa

Person

Patents Grantslast 30 patents

Method for manufacturing semiconductor memory

Semiconductor Memory

Semiconductor memory device with a plurality of memory cells connec...

Method for manufacturing contact hole for a nonvolatile semiconduct...

Semiconductor device having a multi-layer channel structure

Non-volatile semiconductor memory device with a small distribution...

Memory transistor having increased interelectrode capacitance

Non-volatile semiconductor memory having improved erasure character...

Nonvolatile semiconductor device

Electrically erasable memory device having erase-electrode connecte...

Method of manufacturing a floating gate type nonvolatile memory cel...

Nonvolatile semiconductor device with a trench isolator

Semiconductor device having a gate electrode consisting of a plural...

Semiconductor memory device capable of preventing data of non-selec...

Method of manufacturing a nonvolatile semiconductor device

Non-volatile semiconductor memory device and method of the manufact...

Method of manufacturing a semiconductor device

Method for isolating a semiconductor element

Semiconductor device

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY