Kyoung Bong Rouh

Person

Icheon-Si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Method for implanting ions in semiconductor device
- Patent number 8,951,857
- Issue date Feb 10, 2015
- SK hynix Inc.
- Young-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor suppressing short channel effect and method of fabri...
- Patent number 8,803,224
- Issue date Aug 12, 2014
- SK hynix Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a transistor for preventing or reducing sh...
- Patent number 8,703,564
- Issue date Apr 22, 2014
- SK hynix Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniform ion implantation apparatus and method thereof
- Patent number 8,343,859
- Issue date Jan 1, 2013
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a landing plug in a semiconductor device
- Patent number 8,324,099
- Issue date Dec 4, 2012
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of fabricating a MOS transistor having a gate insulation lay...
- Patent number 8,222,101
- Issue date Jul 17, 2012
- Hynix Semiconductor Inc.
- Kyoung-Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating landing plug with varied doping concentration...
- Patent number 8,110,501
- Issue date Feb 7, 2012
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of doping P-type impurity ions in dual poly gate and method...
- Patent number 8,003,501
- Issue date Aug 23, 2011
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for partial ion implantation using atom vibration
- Patent number 7,968,857
- Issue date Jun 28, 2011
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for thermally treating semiconductor device ca...
- Patent number 7,955,074
- Issue date Jun 7, 2011
- Hynix Semiconductor Inc.
- Seung Woo Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 7,947,559
- Issue date May 24, 2011
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial implantation method for semiconductor manufacturing
- Patent number 7,939,418
- Issue date May 10, 2011
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating PMOS transistor and method for forming dual...
- Patent number 7,935,591
- Issue date May 3, 2011
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for implanting ions in semiconductor device
- Patent number 7,825,015
- Issue date Nov 2, 2010
- Hynix Semiconductor, Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device having gate spacer layer...
- Patent number 7,824,975
- Issue date Nov 2, 2010
- Hynix Semiconductor Inc.
- Yong Soo Joung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a transistor having a recess gate structure
- Patent number 7,790,551
- Issue date Sep 7, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating PMOS transistor
- Patent number 7,785,945
- Issue date Aug 31, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a recessed gate and asymmetric dopant r...
- Patent number 7,700,442
- Issue date Apr 20, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recess gate type transistor
- Patent number 7,687,852
- Issue date Mar 30, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor memory device using asymmetr...
- Patent number 7,687,350
- Issue date Mar 30, 2010
- Hynix Semiconductor Inc.
- Min Yong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a recess gate type transistor
- Patent number 7,678,653
- Issue date Mar 16, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial implantation method for semiconductor manufacturing
- Patent number 7,662,705
- Issue date Feb 16, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation apparatus and method for obtaining non-uniform ion...
- Patent number 7,576,339
- Issue date Aug 18, 2009
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial ion implantation apparatus and method using bundled beam
- Patent number 7,554,106
- Issue date Jun 30, 2009
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating MOS transistor
- Patent number 7,538,003
- Issue date May 26, 2009
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recess gate type transistor
- Patent number 7,511,337
- Issue date Mar 31, 2009
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for partial ion implantation
- Patent number 7,488,959
- Issue date Feb 10, 2009
- Hynix Semiconductor Inc.
- Yong Soo Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a cell transistor of a semiconductor memor...
- Patent number 7,470,593
- Issue date Dec 30, 2008
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniform ion implantation apparatus and method thereof
- Patent number 7,365,406
- Issue date Apr 29, 2008
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device using gate-through ion...
- Patent number 7,351,627
- Issue date Apr 1, 2008
- Hynix Semiconductor Inc.
- Seung Woo Jin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for Manufacturing a Transistor for Preventing or Reducing Sh...
- Publication number 20130309827
- Publication date Nov 21, 2013
- SK HYNIX INC.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR SUPPRESSING SHORT CHANNEL EFFECT AND METHOD OF FABRI...
- Publication number 20120280309
- Publication date Nov 8, 2012
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating a Landing Plug in a Semiconductor Device
- Publication number 20120100714
- Publication date Apr 26, 2012
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Implanting Ions In Semiconductor Device
- Publication number 20110039403
- Publication date Feb 17, 2011
- Hynix Semiconductor Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Landing Plug in Semiconductor Device
- Publication number 20100330801
- Publication date Dec 30, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Doping P-type Impurity Ions in Dual Poly Gate and Method...
- Publication number 20100317180
- Publication date Dec 16, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Doping Impurity Ions in Dual Gate and Method of Fabricati...
- Publication number 20100285642
- Publication date Nov 11, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING PMOS TRANSISTOR
- Publication number 20100167483
- Publication date Jul 1, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING PMOS TRANSISTOR AND METHOD FOR FORMING DUAL...
- Publication number 20100120240
- Publication date May 13, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor for Preventing or Reducing Short Channel Effect and Meth...
- Publication number 20100117131
- Publication date May 13, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL IMPLANTATION METHOD FOR SEMICONDUCTOR MANUFACTURING
- Publication number 20100099244
- Publication date Apr 22, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Transistor having a Recess Gate Structure
- Publication number 20100041196
- Publication date Feb 18, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and Method for Partial Ion Implantation Using Atom Vibration
- Publication number 20090267002
- Publication date Oct 29, 2009
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recess Gate Type Transistor
- Publication number 20090173996
- Publication date Jul 9, 2009
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Semiconductor Device Having Gate Spacer Layer...
- Publication number 20090170297
- Publication date Jul 2, 2009
- Hynix Semiconductor Inc.
- Yong Soo Joung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating a Recess Gate Type Transistor
- Publication number 20090170265
- Publication date Jul 2, 2009
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20090004837
- Publication date Jan 1, 2009
- KYOUNG BONG ROUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR THERMALLY TREATING SEMICONDUCTOR DEVICE CA...
- Publication number 20080299784
- Publication date Dec 4, 2008
- Hynix Semiconductor Inc.
- Seung Woo JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-UNIFORM ION IMPLANTATION APPARATUS AND METHOD THEREOF
- Publication number 20080153275
- Publication date Jun 26, 2008
- HYNIX SEMICONDUCTOR INC.
- Kyoung Bong ROUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partial ion implantation apparatus and method using bundled beam
- Publication number 20080128640
- Publication date Jun 5, 2008
- Hynix Semiconductor, Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion implantation apparatus and method for obtaining non-uniform ion...
- Publication number 20080128639
- Publication date Jun 5, 2008
- Hynix Semiconductor, Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR SUPPRESSING SHORT CHANNEL EFFECT AND METHOD OF FABRI...
- Publication number 20080099833
- Publication date May 1, 2008
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A RECESSED GATE AND ASYMMETRIC DOPANT R...
- Publication number 20080096353
- Publication date Apr 24, 2008
- Hynix Semiconductor Inc.
- Kyoung-Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating MOS transistor
- Publication number 20080003756
- Publication date Jan 3, 2008
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and Method for Partial Ion Implantation
- Publication number 20070187620
- Publication date Aug 16, 2007
- Hynix Semiconductor Inc.
- Yong Soo Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recess gate type transistor and method for fabricating the same
- Publication number 20070152267
- Publication date Jul 5, 2007
- HYNIX SEMICONDUCTOR INC.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having recess gate structure and method for fabricating...
- Publication number 20070120182
- Publication date May 31, 2007
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing semiconductor memory device using asymmetr...
- Publication number 20070065999
- Publication date Mar 22, 2007
- Hynix Semiconductor Inc.
- Min Yong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a recessed gate and asymmetric dopant r...
- Publication number 20070004151
- Publication date Jan 4, 2007
- HYNIX SEMICONDUCTOR INC.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device using gate-through ion...
- Publication number 20070004159
- Publication date Jan 4, 2007
- HYNIX SEMICONDUCTOR INC.
- Seung Woo Jin
- H01 - BASIC ELECTRIC ELEMENTS

Kyoung Bong Rouh

Person

Patents Grantslast 30 patents

Method for implanting ions in semiconductor device

MOS transistor suppressing short channel effect and method of fabri...

Method for manufacturing a transistor for preventing or reducing sh...

Non-uniform ion implantation apparatus and method thereof

Method of fabricating a landing plug in a semiconductor device

Method of fabricating a MOS transistor having a gate insulation lay...

Method of fabricating landing plug with varied doping concentration...

Method of doping P-type impurity ions in dual poly gate and method...

Apparatus and method for partial ion implantation using atom vibration

Apparatus and method for thermally treating semiconductor device ca...

Method of fabricating semiconductor device

Partial implantation method for semiconductor manufacturing

Method for fabricating PMOS transistor and method for forming dual...

Method for implanting ions in semiconductor device

Method of fabricating semiconductor device having gate spacer layer...

Method for fabricating a transistor having a recess gate structure

Method for fabricating PMOS transistor

Semiconductor device having a recessed gate and asymmetric dopant r...

Recess gate type transistor

Method for manufacturing semiconductor memory device using asymmetr...

Method of fabricating a recess gate type transistor

Partial implantation method for semiconductor manufacturing

Ion implantation apparatus and method for obtaining non-uniform ion...

Partial ion implantation apparatus and method using bundled beam

Method for fabricating MOS transistor

Recess gate type transistor

Apparatus and method for partial ion implantation

Method for manufacturing a cell transistor of a semiconductor memor...

Non-uniform ion implantation apparatus and method thereof

Method of manufacturing semiconductor device using gate-through ion...

Patents Applicationslast 30 patents

Method for Manufacturing a Transistor for Preventing or Reducing Sh...

MOS TRANSISTOR SUPPRESSING SHORT CHANNEL EFFECT AND METHOD OF FABRI...

Method of Fabricating a Landing Plug in a Semiconductor Device

Method for Implanting Ions In Semiconductor Device

Method of Fabricating Landing Plug in Semiconductor Device

Method of Doping P-type Impurity Ions in Dual Poly Gate and Method...

Method of Doping Impurity Ions in Dual Gate and Method of Fabricati...

METHOD FOR FABRICATING PMOS TRANSISTOR

METHOD FOR FABRICATING PMOS TRANSISTOR AND METHOD FOR FORMING DUAL...

Transistor for Preventing or Reducing Short Channel Effect and Meth...

PARTIAL IMPLANTATION METHOD FOR SEMICONDUCTOR MANUFACTURING

Method for Fabricating a Transistor having a Recess Gate Structure

Apparatus and Method for Partial Ion Implantation Using Atom Vibration

Recess Gate Type Transistor

Method of Fabricating Semiconductor Device Having Gate Spacer Layer...

Method of Fabricating a Recess Gate Type Transistor

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

APPARATUS AND METHOD FOR THERMALLY TREATING SEMICONDUCTOR DEVICE CA...

NON-UNIFORM ION IMPLANTATION APPARATUS AND METHOD THEREOF

Partial ion implantation apparatus and method using bundled beam

Ion implantation apparatus and method for obtaining non-uniform ion...

MOS TRANSISTOR SUPPRESSING SHORT CHANNEL EFFECT AND METHOD OF FABRI...

SEMICONDUCTOR DEVICE HAVING A RECESSED GATE AND ASYMMETRIC DOPANT R...

Method for fabricating MOS transistor

Apparatus and Method for Partial Ion Implantation

Recess gate type transistor and method for fabricating the same

Transistor having recess gate structure and method for fabricating...

Method for manufacturing semiconductor memory device using asymmetr...

Semiconductor device having a recessed gate and asymmetric dopant r...

Method of manufacturing semiconductor device using gate-through ion...