Kyu S. Min

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 11,257,838
- Issue date Feb 22, 2022
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 10,608,005
- Issue date Mar 31, 2020
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned charge-trapping layers for non-volatile data storage,...
- Patent number 9,059,301
- Issue date Jun 16, 2015
- Intel Corporation
- Kyu S. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming layers using atomic layer deposition
- Patent number 8,900,946
- Issue date Dec 2, 2014
- Micron Technology, Inc.
- Prashant Majhi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-aligned charge-trapping layers for non-volatile data storage,...
- Patent number 8,748,264
- Issue date Jun 10, 2014
- Intel Corporation
- Kyu S. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer dielectric memory device
- Patent number 8,729,704
- Issue date May 20, 2014
- Intel Corporation
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanocrystal formation using atomic layer deposition and resulting a...
- Patent number 8,643,079
- Issue date Feb 4, 2014
- Micron Technology, Inc.
- Prashant Majhi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 8,643,082
- Issue date Feb 4, 2014
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer dielectric memory device
- Patent number 8,546,944
- Issue date Oct 1, 2013
- Intel Corporation
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells containing charge-trapping zones
- Patent number 8,228,743
- Issue date Jul 24, 2012
- Micron Technology, Inc.
- Kyu S. Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cells, methods of forming dielectric materials, and methods...
- Patent number 8,183,110
- Issue date May 22, 2012
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 8,058,140
- Issue date Nov 15, 2011
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate structures
- Patent number 7,989,289
- Issue date Aug 2, 2011
- Intel Corporation
- Tejas Krishnamohan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells, methods of forming dielectric materials, and methods...
- Patent number 7,968,406
- Issue date Jun 28, 2011
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells, electronic systems, methods of forming memory cells,...
- Patent number 7,898,850
- Issue date Mar 1, 2011
- Micron Technology, Inc.
- Kyu S. Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Current focusing memory architecture for use in electrical probe-ba...
- Patent number 7,795,607
- Issue date Sep 14, 2010
- Intel Corporation
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Grant
Probe-based storage device
- Patent number 7,773,493
- Issue date Aug 10, 2010
- Intel Corporation
- Kyu Min
- G11 - INFORMATION STORAGE
Information Patent Grant
Dielectric barrier for nanocrystals
- Patent number 7,763,511
- Issue date Jul 27, 2010
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Probe-based memory
- Patent number 7,750,433
- Issue date Jul 6, 2010
- Intel Corporation
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 7,705,389
- Issue date Apr 27, 2010
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-deposition encapsulation of nanostructures: compositions, devi...
- Patent number 7,585,564
- Issue date Sep 8, 2009
- Nanosys, Inc.
- Jeffery A. Whiteford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Probe-based memory
- Patent number 7,498,655
- Issue date Mar 3, 2009
- Intel Corporation
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Grant
Post-deposition encapsulation of nanostructures: compositions, devi...
- Patent number 7,267,875
- Issue date Sep 11, 2007
- Nanosys, Inc.
- Jeffery A. Whiteford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ sequential high density plasma deposition and etch processi...
- Patent number 7,223,701
- Issue date May 29, 2007
- Intel Corporation
- Kyu S. Min
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Thickened Sidewall Dielectric for Memory Cell
- Publication number 20200203360
- Publication date Jun 25, 2020
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CHARGE-TRAPPING LAYERS FOR NON-VOLATILE DATA STORAGE,...
- Publication number 20140239369
- Publication date Aug 28, 2014
- Kyu S. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL
- Publication number 20140159136
- Publication date Jun 12, 2014
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOCRYSTAL FORMATION USING ATOMIC LAYER DEPOSITION
- Publication number 20140148002
- Publication date May 29, 2014
- Micron Technology, Inc.
- Prashant MAJHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
MULTILAYER DIELECTRIC MEMORY DEVICE
- Publication number 20140091429
- Publication date Apr 3, 2014
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
MULTILAYER DIELECTRIC MEMORY DEVICE
- Publication number 20120161318
- Publication date Jun 28, 2012
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL
- Publication number 20120032252
- Publication date Feb 9, 2012
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells, Methods Of Forming Dielectric Materials, And Methods...
- Publication number 20110220989
- Publication date Sep 15, 2011
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash memory with partially removed blocking dielectric in the word...
- Publication number 20110147827
- Publication date Jun 23, 2011
- Fatma Arzum Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells
- Publication number 20110133268
- Publication date Jun 9, 2011
- Micron Technology, Inc.
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL
- Publication number 20100197131
- Publication date Aug 5, 2010
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells, Methods Of Forming Dielectric Materials, And Methods...
- Publication number 20100176432
- Publication date Jul 15, 2010
- D.V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED OXY-NITRIDE TUNNEL BARRIER
- Publication number 20090321809
- Publication date Dec 31, 2009
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING GATE STRUCTURES
- Publication number 20090283817
- Publication date Nov 19, 2009
- Tejas Krishnamohan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOCRYSTAL FORMATION USING ATOMIC LAYER DEPOSITION AND RESULTING A...
- Publication number 20090273016
- Publication date Nov 5, 2009
- Prashant Majhi
- B82 - NANO-TECHNOLOGY
Information Patent Application
RECESSED CHANNEL SELECT GATE FOR A MEMORY DEVICE
- Publication number 20090242961
- Publication date Oct 1, 2009
- Sanh Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROBE-BASED MEMORY
- Publication number 20090146126
- Publication date Jun 11, 2009
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, Electronic Systems, Methods Of Forming Memory Cells,...
- Publication number 20090097320
- Publication date Apr 16, 2009
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL
- Publication number 20090057744
- Publication date Mar 5, 2009
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY CELL WITH MULTI-LAYER BLOCKING DIELECTRIC
- Publication number 20090001443
- Publication date Jan 1, 2009
- Intel Corporation
- Tejas Krishnamohan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CHARGE-TRAPPING LAYERS FOR NON-VOLATILE DATA STORAGE,...
- Publication number 20080237691
- Publication date Oct 2, 2008
- Kyu S. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K TRILAYER DIELECTRIC DEVICE AND METHODS
- Publication number 20080237683
- Publication date Oct 2, 2008
- Kyu S. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC BARRIER FOR NANOCRYSTALS
- Publication number 20080157171
- Publication date Jul 3, 2008
- Prashant Majhi
- B82 - NANO-TECHNOLOGY
Information Patent Application
Probe-based storage device
- Publication number 20080089108
- Publication date Apr 17, 2008
- Kyu Min
- G11 - INFORMATION STORAGE
Information Patent Application
Current focusing memory architecture for use in electrical probe-ba...
- Publication number 20080078982
- Publication date Apr 3, 2008
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
Post-deposition encapsulation of nanostructures: compositions, devi...
- Publication number 20080032134
- Publication date Feb 7, 2008
- Nanosys, Inc.
- Jeffery A. Whiteford
- B82 - NANO-TECHNOLOGY
Information Patent Application
Probe-based memory
- Publication number 20070228513
- Publication date Oct 4, 2007
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH NANOCRYSTAL AS DISCRETE STORAGE ELEMENT
- Publication number 20070105312
- Publication date May 10, 2007
- Kyu S. Min
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for forming a memory device
- Publication number 20060110883
- Publication date May 25, 2006
- Intel Corporation
- Kyu S. Min
- B82 - NANO-TECHNOLOGY
Information Patent Application
Forming planarized semiconductor structures
- Publication number 20060098524
- Publication date May 11, 2006
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Thickened sidewall dielectric for memory cell

Thickened sidewall dielectric for memory cell

Self-aligned charge-trapping layers for non-volatile data storage,...

Method of forming layers using atomic layer deposition

Self-aligned charge-trapping layers for non-volatile data storage,...

Multilayer dielectric memory device

Nanocrystal formation using atomic layer deposition and resulting a...

Thickened sidewall dielectric for memory cell

Multilayer dielectric memory device

Memory cells containing charge-trapping zones

Memory cells, methods of forming dielectric materials, and methods...

Thickened sidewall dielectric for memory cell

Floating gate structures

Memory cells, methods of forming dielectric materials, and methods...

Memory cells, electronic systems, methods of forming memory cells,...

Current focusing memory architecture for use in electrical probe-ba...

Probe-based storage device

Dielectric barrier for nanocrystals

Probe-based memory

Thickened sidewall dielectric for memory cell

Post-deposition encapsulation of nanostructures: compositions, devi...

Probe-based memory

Post-deposition encapsulation of nanostructures: compositions, devi...

In-situ sequential high density plasma deposition and etch processi...

Patents Applicationslast 30 patents

Thickened Sidewall Dielectric for Memory Cell

SELF-ALIGNED CHARGE-TRAPPING LAYERS FOR NON-VOLATILE DATA STORAGE,...

THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL

NANOCRYSTAL FORMATION USING ATOMIC LAYER DEPOSITION

MULTILAYER DIELECTRIC MEMORY DEVICE

MULTILAYER DIELECTRIC MEMORY DEVICE

THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL

Memory Cells, Methods Of Forming Dielectric Materials, And Methods...

Flash memory with partially removed blocking dielectric in the word...

Memory Cells

THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL

Memory Cells, Methods Of Forming Dielectric Materials, And Methods...

GRADED OXY-NITRIDE TUNNEL BARRIER

FLOATING GATE STRUCTURES

NANOCRYSTAL FORMATION USING ATOMIC LAYER DEPOSITION AND RESULTING A...

RECESSED CHANNEL SELECT GATE FOR A MEMORY DEVICE

PROBE-BASED MEMORY

Memory Cells, Electronic Systems, Methods Of Forming Memory Cells,...

THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL

NON-VOLATILE MEMORY CELL WITH MULTI-LAYER BLOCKING DIELECTRIC

SELF-ALIGNED CHARGE-TRAPPING LAYERS FOR NON-VOLATILE DATA STORAGE,...

HIGH-K TRILAYER DIELECTRIC DEVICE AND METHODS

DIELECTRIC BARRIER FOR NANOCRYSTALS

Probe-based storage device

Current focusing memory architecture for use in electrical probe-ba...

Post-deposition encapsulation of nanostructures: compositions, devi...

Probe-based memory

MEMORY CELL WITH NANOCRYSTAL AS DISCRETE STORAGE ELEMENT

Method for forming a memory device

Forming planarized semiconductor structures