Kyung-Chang Ryoo

Person

Seongnam-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
System and method of host and storage device path selection by memo...
- Patent number 12,164,802
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Chon Yong Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of operating resistive memory device capable of reducing wri...
- Patent number 10,629,262
- Issue date Apr 21, 2020
- Samsung Electronics Co., Ltd.
- Hye-Young Ryu
- G11 - INFORMATION STORAGE
Information Patent Grant
Wear leveling for storage or memory device
- Patent number 10,049,717
- Issue date Aug 14, 2018
- Samsung Electronics Co., Ltd.
- Dimin Niu
- G11 - INFORMATION STORAGE
Information Patent Grant
Neuromophic system and configuration method thereof
- Patent number 9,710,747
- Issue date Jul 18, 2017
- Samsung Electronics Co., Ltd.
- Daehwan Kang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Variable resistance memory device and a variable resistance memory...
- Patent number 9,230,642
- Issue date Jan 5, 2016
- Samsung Electronics Co., Ltd.
- Kyung-chang Ryoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices and methods of driving the same
- Patent number 8,472,237
- Issue date Jun 25, 2013
- Samsung Electronics Co., Ltd.
- Jeong-hoon Oh
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device
- Patent number 8,384,060
- Issue date Feb 26, 2013
- Samsung Electronics Co., Ltd.
- Kyung-Chang Ryoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory
- Patent number 8,164,079
- Issue date Apr 24, 2012
- Samsung Electronics Co., Ltd.
- Yoon-Jong Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory devices having dual lower electrodes and method...
- Patent number 8,129,214
- Issue date Mar 6, 2012
- Samsung Electronics Co., Ltd.
- Yoon-Jong Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming phase-change memory units, and methods of manufa...
- Patent number 8,043,924
- Issue date Oct 25, 2011
- Samsung Electronics Co., Ltd.
- Kyung-Chang Ryoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having phase change memory cells, electronic...
- Patent number 8,026,543
- Issue date Sep 27, 2011
- Samsung Electronics Co., Ltd.
- Yoon-Jong Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-changeable memory devices having reduced susceptibility to th...
- Patent number 7,977,662
- Issue date Jul 12, 2011
- Samsung Electronics Co., Ltd.
- Kyung-Chang Ryoo
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Phase change memory and method of fabricating the same
- Patent number 7,932,102
- Issue date Apr 26, 2011
- Samsung Electronics Co., Ltd.
- Yoon-Jong Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory devices having dual lower electrodes
- Patent number 7,696,508
- Issue date Apr 13, 2010
- Samsung Electronics Co., Ltd.
- Yoon-Jong Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having phase change memory cells, electronic...
- Patent number 7,482,616
- Issue date Jan 27, 2009
- Samsung Electronics Co., Ltd.
- Yoon-Jong Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change memory device
- Patent number 7,453,111
- Issue date Nov 18, 2008
- Samsung Electronics Co., Ltd.
- Kyung-Chang Ryoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase changeable memory device and method of formation thereof
- Patent number 7,419,881
- Issue date Sep 2, 2008
- Samsung Electronics Co., Ltd.
- Byeong-Ok Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change memory device having a barrier layer and manufacturing...
- Patent number 7,411,208
- Issue date Aug 12, 2008
- Samsung Electronics Co., Ltd.
- Young-Nam Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PRAMS having phase-change layer pattern with electrode contact area...
- Patent number 7,214,957
- Issue date May 8, 2007
- Samsung Electronics Co., Ltd.
- Kyung-Chang Ryoo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STORAGE DEVICE, MEMORY DEVICE, AND COMPUTING SYSTEM INCLUDING THE SAME
- Publication number 20230376217
- Publication date Nov 23, 2023
- Samsung Electronics Co., Ltd.
- Chon Yong LEE
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMPUTING SYSTEM FOR MANAGING DISTRIBUTED STORAGE DEVICES, AND METH...
- Publication number 20230376238
- Publication date Nov 23, 2023
- Samsung Electronics Co., Ltd.
- Chon Yong LEE
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMPUTING SYSTEM GENERATING MAP DATA, AND METHOD OF OPERATING THE SAME
- Publication number 20230359379
- Publication date Nov 9, 2023
- Samsung Electronics Co., Ltd.
- CHON YONG LEE
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF OPERATING RESISTIVE MEMORY DEVICE CAPABLE OF REDUCING WRI...
- Publication number 20190267084
- Publication date Aug 29, 2019
- Samsng Electronics Co., Ltd.
- Hye-Young Ryu
- G11 - INFORMATION STORAGE
Information Patent Application
WEAR LEVELING FOR STORAGE OR MEMORY DEVICE
- Publication number 20170256305
- Publication date Sep 7, 2017
- Samsung Electronics Co., Ltd.
- Dimin Niu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE AND A VARIABLE RESISTANCE MEMORY...
- Publication number 20150043267
- Publication date Feb 12, 2015
- Samsung Electronics Co., Ltd.
- Kyung-chang Ryoo
- G11 - INFORMATION STORAGE
Information Patent Application
NEUROMOPHIC SYSTEM AND CONFIGURATION METHOD THEREOF
- Publication number 20150039547
- Publication date Feb 5, 2015
- Samsung Electronics Co., Ltd.
- Daehwan KANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VARIABLE RESISTANCE MEMORY
- Publication number 20120175580
- Publication date Jul 12, 2012
- Samsung Electronics Co., Ltd.
- Yoon-Jong SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY
- Publication number 20110193047
- Publication date Aug 11, 2011
- Samsung Electronics Co., Ltd.
- Yoon-Jong SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF DRIVING THE SAME
- Publication number 20110170331
- Publication date Jul 14, 2011
- Jeong-hoon OH
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY DEVICES HAVING DUAL LOWER ELECTRODES AND METHOD...
- Publication number 20100144090
- Publication date Jun 10, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Yoon-Jong SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase-Changeable Fuse Elements and Memory Devices Containing Phase-...
- Publication number 20100072453
- Publication date Mar 25, 2010
- Hong-sik Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING PHASE-CHANGE MEMORY UNITS, AND METHODS OF MANUFA...
- Publication number 20090258477
- Publication date Oct 15, 2009
- Kyung Chang Ryoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICES
- Publication number 20090230378
- Publication date Sep 17, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Kyung-Chang Ryoo
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICES
- Publication number 20090230376
- Publication date Sep 17, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Kyung-Chang Ryoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase change memory and method of fabricating the same
- Publication number 20090163023
- Publication date Jun 25, 2009
- Yoon-Jong Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase-Changeable Memory Devices Having Reduced Susceptibility to Th...
- Publication number 20090127538
- Publication date May 21, 2009
- Samsung Electronics Co. Ltd.
- Kyung-Chang Ryoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING PHASE CHANGE MEMORY CELLS, ELECTRONIC...
- Publication number 20090101881
- Publication date Apr 23, 2009
- Samsung Electronics Co., Ltd.
- Yoon-Jong Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICES HAVING DUAL LOWER ELECTRODES AND METHOD...
- Publication number 20080099753
- Publication date May 1, 2008
- Samsung Electronics Co., Ltd.
- Yoon-Jong SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE
- Publication number 20070284622
- Publication date Dec 13, 2007
- Samsung Electronics Co., Ltd.
- Kyung-Chang Ryoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20070272950
- Publication date Nov 29, 2007
- Samsung Electronics Co., Ltd.
- Rak-Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory devices including spacers on sidewalls of memory storage ele...
- Publication number 20060228853
- Publication date Oct 12, 2006
- Won-Cheol Jeong
- B82 - NANO-TECHNOLOGY
Information Patent Application
Phase changeable memory device and method of formation thereof
- Publication number 20060110888
- Publication date May 25, 2006
- Byeong-Ok Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRAMS having phase-change layer pattern with electrode contact area...
- Publication number 20060043355
- Publication date Mar 2, 2006
- Kyung-Chang Ryoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase-change memory device having a barrier layer and manufacturing...
- Publication number 20050263823
- Publication date Dec 1, 2005
- Young-Nam Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices having phase change memory cells, electronic...
- Publication number 20050263829
- Publication date Dec 1, 2005
- Yoon-Jong Song
- H01 - BASIC ELECTRIC ELEMENTS

Kyung-Chang Ryoo

Person

Patents Grantslast 30 patents

System and method of host and storage device path selection by memo...

Method of operating resistive memory device capable of reducing wri...

Wear leveling for storage or memory device

Neuromophic system and configuration method thereof

Variable resistance memory device and a variable resistance memory...

Semiconductor devices and methods of driving the same

Resistive memory device

Phase change memory

Phase change memory devices having dual lower electrodes and method...

Methods of forming phase-change memory units, and methods of manufa...

Semiconductor devices having phase change memory cells, electronic...

Phase-changeable memory devices having reduced susceptibility to th...

Phase change memory and method of fabricating the same

Phase change memory devices having dual lower electrodes

Semiconductor devices having phase change memory cells, electronic...

Phase-change memory device

Phase changeable memory device and method of formation thereof

Phase-change memory device having a barrier layer and manufacturing...

PRAMS having phase-change layer pattern with electrode contact area...

Patents Applicationslast 30 patents

STORAGE DEVICE, MEMORY DEVICE, AND COMPUTING SYSTEM INCLUDING THE SAME

COMPUTING SYSTEM FOR MANAGING DISTRIBUTED STORAGE DEVICES, AND METH...

COMPUTING SYSTEM GENERATING MAP DATA, AND METHOD OF OPERATING THE SAME

METHOD OF OPERATING RESISTIVE MEMORY DEVICE CAPABLE OF REDUCING WRI...

WEAR LEVELING FOR STORAGE OR MEMORY DEVICE

VARIABLE RESISTANCE MEMORY DEVICE AND A VARIABLE RESISTANCE MEMORY...

NEUROMOPHIC SYSTEM AND CONFIGURATION METHOD THEREOF

VARIABLE RESISTANCE MEMORY

PHASE CHANGE MEMORY

SEMICONDUCTOR DEVICES AND METHODS OF DRIVING THE SAME

PHASE CHANGE MEMORY DEVICES HAVING DUAL LOWER ELECTRODES AND METHOD...

Phase-Changeable Fuse Elements and Memory Devices Containing Phase-...

METHODS OF FORMING PHASE-CHANGE MEMORY UNITS, AND METHODS OF MANUFA...

RESISTIVE MEMORY DEVICES

RESISTIVE MEMORY DEVICES

Phase change memory and method of fabricating the same

Phase-Changeable Memory Devices Having Reduced Susceptibility to Th...

SEMICONDUCTOR DEVICES HAVING PHASE CHANGE MEMORY CELLS, ELECTRONIC...

PHASE CHANGE MEMORY DEVICES HAVING DUAL LOWER ELECTRODES AND METHOD...

PHASE-CHANGE MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

Memory devices including spacers on sidewalls of memory storage ele...

Phase changeable memory device and method of formation thereof

PRAMS having phase-change layer pattern with electrode contact area...

Phase-change memory device having a barrier layer and manufacturing...

Semiconductor devices having phase change memory cells, electronic...