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Kyusaku Nishioka
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Itami, JP
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last 30 patents
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Patent Grant
Method of etching a wafer having high anisotropy with a plasma gas...
Patent number
5,304,775
Issue date
Apr 19, 1994
Mitsubishi Denki Kabushiki Kaisha
Nobuo Fujiwara
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making an oxide isolated, lateral bipolar transistor
Patent number
5,070,030
Issue date
Dec 3, 1991
Mitsubishi Denki Kabushiki Kaisha
Tatsuhiko Ikeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bipolar transistor and method of manufacturing the same
Patent number
4,990,991
Issue date
Feb 5, 1991
Mitsubishi Denki Kabushiki Kaisha
Tatsuhiko Ikeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor wafer treating device utilizing a plasma
Patent number
4,982,138
Issue date
Jan 1, 1991
Mitsubishi Denki Kabushiki Kaisha
Nobuo Fujiwara
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor wafer treating device utilizing ECR plasma
Patent number
4,915,979
Issue date
Apr 10, 1990
Mitsubishi Denki Kabushiki Kaisha
Tomoaki Ishida
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method and apparatus for plasma treatment
Patent number
4,891,095
Issue date
Jan 2, 1990
Mitsubishi Denki Kabushiki Kaisha
Tomoaki Ishida
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor wafer treating apparatus utilizing a plasma
Patent number
4,877,509
Issue date
Oct 31, 1989
Mitsubishi Denki Kabushiki Kaisha
Toshiaki Ogawa
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...