Lark E. Lehman

Person

Monument, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dynamically configurable logic gate using a non-linear element
- Patent number 7,453,285
- Issue date Nov 18, 2008
- Chaologix, Inc.
- Steven Lee Kiel
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Sense amplifier configuration for a 1T/1C ferroelectric memory
- Patent number 6,560,137
- Issue date May 6, 2003
- Ramtron International Corporation
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference cell configuration for a 1T/1C ferroelectric memory
- Patent number 6,252,793
- Issue date Jun 26, 2001
- Ramtron International Corporation
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell configuration for a 1T/1C ferroelectric memory
- Patent number 6,185,123
- Issue date Feb 6, 2001
- Ramtron International Corporation
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell configuration for a 1T/1C ferroelectric memory
- Patent number 6,028,783
- Issue date Feb 22, 2000
- Ramtron International Corporation
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
Plate line segmentation in a 1T/1C ferroelectric memory
- Patent number 5,995,406
- Issue date Nov 30, 1999
- Ramtron International Corporation
- William F. Kraus
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference cell configuration for a 1T/1C ferroelectric memory
- Patent number 5,986,919
- Issue date Nov 16, 1999
- Ramtron International Corporation
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier configuration for a 1T/1C ferroelectric memory
- Patent number 5,969,980
- Issue date Oct 19, 1999
- Ramtron International Corporation
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference cell for a 1T/1C ferroelectric memory
- Patent number 5,956,266
- Issue date Sep 21, 1999
- Ramtron International Corporation
- Dennis R. Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensing methodology for a 1T/1C ferroelectric memory
- Patent number 5,880,989
- Issue date Mar 9, 1999
- Ramtron International Corporation
- Dennis R. Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
High speed serial data link
- Patent number RE35137
- Issue date Jan 2, 1996
- Texas Instruments Incorporated
- Mark A. Bryans
- 375 - Pulse or digital communications
Information Patent Grant
High speed serial data link
- Patent number 4,979,185
- Issue date Dec 18, 1990
- Texas Instruments Incorporated
- Mark A. Bryans
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Patents Applicationslast 30 patents

Information Patent Application
DYNAMICALLY CONFIGURABLE LOGIC GATE USING A NON-LINEAR ELEMENT
- Publication number 20080150578
- Publication date Jun 26, 2008
- Chaologix, Inc.
- Steven Lee Kiel
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Reference cell configuration for a 1T/1C ferroelectric memory
- Publication number 20050122765
- Publication date Jun 9, 2005
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Application
Memory cell configuration for a 1T/1C ferroelectric memory
- Publication number 20010033510
- Publication date Oct 25, 2001
- Judith E. Allen
- G11 - INFORMATION STORAGE

Lark E. Lehman

Person

Patents Grantslast 30 patents

Dynamically configurable logic gate using a non-linear element

Sense amplifier configuration for a 1T/1C ferroelectric memory

Reference cell configuration for a 1T/1C ferroelectric memory

Memory cell configuration for a 1T/1C ferroelectric memory

Memory cell configuration for a 1T/1C ferroelectric memory

Plate line segmentation in a 1T/1C ferroelectric memory

Reference cell configuration for a 1T/1C ferroelectric memory

Sense amplifier configuration for a 1T/1C ferroelectric memory

Reference cell for a 1T/1C ferroelectric memory

Sensing methodology for a 1T/1C ferroelectric memory

High speed serial data link

High speed serial data link

Patents Applicationslast 30 patents

DYNAMICALLY CONFIGURABLE LOGIC GATE USING A NON-LINEAR ELEMENT

Reference cell configuration for a 1T/1C ferroelectric memory

Memory cell configuration for a 1T/1C ferroelectric memory