Lars Knoll

Person

Wohlenschwill, CH

People

Patents Grantslast 30 patents

Information Patent Grant
Strain enhanced SiC power semiconductor device and method of manufa...
- Patent number 12,113,131
- Issue date Oct 8, 2024
- HITACHI ENERGY LTD
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide transistor device
- Patent number 12,062,698
- Issue date Aug 13, 2024
- HITACHI ENERGY LTD
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical silicon carbide power MOSFET and IGBT and a method of manu...
- Patent number 11,967,616
- Issue date Apr 23, 2024
- HITACHI ENERGY LTD
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned field plate mesa FPM SiC schottky barrier diode
- Patent number 11,888,037
- Issue date Jan 30, 2024
- HITACHI ENERGY LTD
- Andrei Mihaila
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide power device with MOS structure and stressor
- Patent number 11,302,811
- Issue date Apr 12, 2022
- Hitachi Energy Switzerland AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide superjunction power semiconductor device and method...
- Patent number 11,031,473
- Issue date Jun 8, 2021
- ABB Power Grids Switzerland AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing such a semiconduc...
- Patent number 10,553,437
- Issue date Feb 4, 2020
- ABB Schweiz AG
- Holger Bartolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 10,516,022
- Issue date Dec 24, 2019
- ABB Schweiz AG
- Holger Bartolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 10,490,658
- Issue date Nov 26, 2019
- ABB Schweiz AG
- Lars Knoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing such a semiconduc...
- Patent number 10,361,082
- Issue date Jul 23, 2019
- ABB Schweiz AG
- Holger Bartolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier schottky diode with enhanced surge current capability
- Patent number 10,164,126
- Issue date Dec 25, 2018
- ABB Schweiz AG
- Andrei Mihaila
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20250006785
- Publication date Jan 2, 2025
- Hitachi Energy Ltd
- Gianpaolo ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240413207
- Publication date Dec 12, 2024
- Hitachi Energy Ltd
- Giovanni ALFIERI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A REDUCED CONCENTRATION OF CARBON VACAN...
- Publication number 20240339322
- Publication date Oct 10, 2024
- Hitachi Energy Ltd
- Giovanni ALFIERI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AN OHMIC CONTACT ON A WIDE-BANDGAP SEMICONDUCTOR...
- Publication number 20240222462
- Publication date Jul 4, 2024
- Hitachi Energy Ltd
- Vinoth SUNDARAMOORTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20240186377
- Publication date Jun 6, 2024
- Hitachi Energy Ltd
- Yulieth Arango
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A POWER SEMICON...
- Publication number 20240170566
- Publication date May 23, 2024
- Hitachi Energy Ltd
- Andrei MIHAILA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCING A POWER SEMIC...
- Publication number 20240096937
- Publication date Mar 21, 2024
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240079454
- Publication date Mar 7, 2024
- Hitachi Energy Switzerland AG
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A POWER SEM...
- Publication number 20240055495
- Publication date Feb 15, 2024
- Hitachi Energy Switzerland AG
- Stephan WIRTHS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH AN INSULATED TRENCH GATE ELECTRODE
- Publication number 20240021670
- Publication date Jan 18, 2024
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND POWER MODULE
- Publication number 20240021542
- Publication date Jan 18, 2024
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD
- Publication number 20230411510
- Publication date Dec 21, 2023
- Hitachi Energy Switzerland AG
- Stephan WIRTHS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20230411514
- Publication date Dec 21, 2023
- Hitachi Energy Switzerland AG
- Gianpaolo ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND OPERATING METHOD
- Publication number 20230369408
- Publication date Nov 16, 2023
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SiC POWER SEMICONDUCTOR DEVICE
- Publication number 20230327014
- Publication date Oct 12, 2023
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Structure, Wide Bandgap Material Power Device With t...
- Publication number 20230187525
- Publication date Jun 15, 2023
- Hitachi Energy Switzerland AG
- Lars Knoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar SiC MOSFET with Retrograde Implanted Channel
- Publication number 20220320290
- Publication date Oct 6, 2022
- Hitachi Energy Switzerland AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain Enhanced SiC Power Semiconductor Device and Method of Manufa...
- Publication number 20220302309
- Publication date Sep 22, 2022
- Hitachi Energy Switzerland AG
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Transistor Device
- Publication number 20220278205
- Publication date Sep 1, 2022
- Hitachi Energy Switzerland AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Power Device with MOS Structure and Stressor
- Publication number 20220045213
- Publication date Feb 10, 2022
- ABB Power Grids Switzerland AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A Vertical Silicon Carbide Power MOSFET and IGBT and a Method of Ma...
- Publication number 20220028976
- Publication date Jan 27, 2022
- ABB Power Grids Switzerland AG
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT CHANNEL TRENCH POWER MOSFET AND METHOD
- Publication number 20210043735
- Publication date Feb 11, 2021
- ABB Power Grids Switzerland AG
- Renato Minamisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Field Plate Mesa FPM SiC Schottky Barrier Diode
- Publication number 20210020753
- Publication date Jan 21, 2021
- ABB Power Grids Switzerland AG
- Andrei Mihaila
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUPERJUNCTION POWER SEMICONDUCTOR DEVICE AND METHOD...
- Publication number 20200006496
- Publication date Jan 2, 2020
- ABB Schweiz AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT CHANNEL TRENCH POWER MOSFET
- Publication number 20190363166
- Publication date Nov 28, 2019
- ABB Schweiz AG
- Lars Knoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT CHANNEL TRENCH POWER MOSFET
- Publication number 20190035928
- Publication date Jan 31, 2019
- ABB Schweiz AG
- Renato Minamisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUC...
- Publication number 20180350602
- Publication date Dec 6, 2018
- ABB Schweiz AG
- Holger Bartolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20180350977
- Publication date Dec 6, 2018
- ABB Schweiz AG
- Lars Knoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20180350943
- Publication date Dec 6, 2018
- ABB Schweiz AG
- Holger Bartolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUC...
- Publication number 20180286963
- Publication date Oct 4, 2018
- ABB Schweiz AG
- Holger Bartolf
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Strain enhanced SiC power semiconductor device and method of manufa...

Silicon carbide transistor device

Vertical silicon carbide power MOSFET and IGBT and a method of manu...

Self-aligned field plate mesa FPM SiC schottky barrier diode

Silicon carbide power device with MOS structure and stressor

Silicon carbide superjunction power semiconductor device and method...

Semiconductor device and method for manufacturing such a semiconduc...

Method for manufacturing a semiconductor device

Power semiconductor device

Semiconductor device and method for manufacturing such a semiconduc...

Junction barrier schottky diode with enhanced surge current capability

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SEMICONDUCTOR DEVICE HAVING A REDUCED CONCENTRATION OF CARBON VACAN...

METHOD FOR FORMING AN OHMIC CONTACT ON A WIDE-BANDGAP SEMICONDUCTOR...

POWER SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A POWER SEMICON...

POWER SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCING A POWER SEMIC...

SILICON CARBIDE POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME

POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A POWER SEM...

POWER SEMICONDUCTOR DEVICE WITH AN INSULATED TRENCH GATE ELECTRODE

POWER SEMICONDUCTOR DEVICE AND POWER MODULE

POWER FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD

POWER SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE AND OPERATING METHOD

TRENCH SiC POWER SEMICONDUCTOR DEVICE

Insulated Gate Structure, Wide Bandgap Material Power Device With t...

Planar SiC MOSFET with Retrograde Implanted Channel

Strain Enhanced SiC Power Semiconductor Device and Method of Manufa...

Silicon Carbide Transistor Device

Silicon Carbide Power Device with MOS Structure and Stressor

A Vertical Silicon Carbide Power MOSFET and IGBT and a Method of Ma...

SHORT CHANNEL TRENCH POWER MOSFET AND METHOD

Self-Aligned Field Plate Mesa FPM SiC Schottky Barrier Diode

SILICON CARBIDE SUPERJUNCTION POWER SEMICONDUCTOR DEVICE AND METHOD...

SHORT CHANNEL TRENCH POWER MOSFET

SHORT CHANNEL TRENCH POWER MOSFET

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUC...

POWER SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUC...