Laura Matz

Person

McKinney, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Monitoring of temperature variation across wafers during processing
- Patent number 7,745,238
- Issue date Jun 29, 2010
- Texas Instruments Incorporated
- Deepak A. Ramappa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma treatment and repair processes for reducing sidewall damage...
- Patent number 7,741,224
- Issue date Jun 22, 2010
- Texas Instruments Incorporated
- Ping Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a silicon oxide interface layer during silicon carbide...
- Patent number 7,682,989
- Issue date Mar 23, 2010
- Texas Instruments Incorporated
- Laura M. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen and oxygen based photoresist removal process
- Patent number 7,413,994
- Issue date Aug 19, 2008
- Texas Instruments Incorporated
- Patricia Beauregard Smith
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE FILM FOR INTEGRATED CIRCUIT FABRICATION
- Publication number 20110034023
- Publication date Feb 10, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Laura M. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONITORING OF TEMPERATURE VARIATION ACROSS WAFERS DURING PROCESSING
- Publication number 20090215203
- Publication date Aug 27, 2009
- Texas Instruments, Inc.
- Deepak A. Ramppa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Film for Semiconductor Processing
- Publication number 20090081864
- Publication date Mar 26, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Laura M. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Doped Oxide Hardmask For Single and Dual Damascene...
- Publication number 20090075480
- Publication date Mar 19, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Laura M. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA TREATMENT AND REPAIR PROCESSES FOR REDUCING SIDEWALL DAMAGE...
- Publication number 20090017563
- Publication date Jan 15, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Ping Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF A SILICON OXIDE INTERFACE LAYER DURING SILICON CARBIDE...
- Publication number 20080283975
- Publication date Nov 20, 2008
- Laura M. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREVENTION OF RESIST POISONING IN INTEGRATED CIRCUIT FAB...
- Publication number 20080057701
- Publication date Mar 6, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Edward Raymond Engbrecht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon nitride/oxygen doped silicon carbide etch stop bi-layer for...
- Publication number 20080014739
- Publication date Jan 17, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Laura M. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTIVE DEVICE HAVING RESIST POISON ALUMINUM OXIDE BARRIER A...
- Publication number 20070290347
- Publication date Dec 20, 2007
- TEXAS INSTRUMENTS INCORPORATED
- William W. Dostalik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for removing residue containing an embedded metal
- Publication number 20070184666
- Publication date Aug 9, 2007
- Texas Instruments Inc.
- Patricia Beauregard Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen and oxygen based photoresist removal process
- Publication number 20060281312
- Publication date Dec 14, 2006
- Texas Instruments, Incorporated
- Patricia Beauregard Smith
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Interconnect structure including a silicon oxycarbonitride layer
- Publication number 20060264042
- Publication date Nov 23, 2006
- Texas Instruments, Incorporated
- Laura M. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Energy beam treatment to improve the hermeticity of a hermetic layer
- Publication number 20060264028
- Publication date Nov 23, 2006
- Texas Instruments, Incorporated
- Laura M. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Extraction of impurities in a semiconductor process with a supercri...
- Publication number 20050241672
- Publication date Nov 3, 2005
- TEXAS INSTRUMENTS INCORPORATED
- Phillip D. Matz
- B08 - CLEANING

Person

Patents Grantslast 30 patents

Monitoring of temperature variation across wafers during processing

Plasma treatment and repair processes for reducing sidewall damage...

Formation of a silicon oxide interface layer during silicon carbide...

Hydrogen and oxygen based photoresist removal process

Patents Applicationslast 30 patents

SILICON CARBIDE FILM FOR INTEGRATED CIRCUIT FABRICATION

MONITORING OF TEMPERATURE VARIATION ACROSS WAFERS DURING PROCESSING

SiC Film for Semiconductor Processing

Silicon Carbide Doped Oxide Hardmask For Single and Dual Damascene...

PLASMA TREATMENT AND REPAIR PROCESSES FOR REDUCING SIDEWALL DAMAGE...

FORMATION OF A SILICON OXIDE INTERFACE LAYER DURING SILICON CARBIDE...

METHOD FOR PREVENTION OF RESIST POISONING IN INTEGRATED CIRCUIT FAB...

Silicon nitride/oxygen doped silicon carbide etch stop bi-layer for...

SEMICONDUCTIVE DEVICE HAVING RESIST POISON ALUMINUM OXIDE BARRIER A...

Method for removing residue containing an embedded metal

Hydrogen and oxygen based photoresist removal process

Interconnect structure including a silicon oxycarbonitride layer

Energy beam treatment to improve the hermeticity of a hermetic layer

Extraction of impurities in a semiconductor process with a supercri...