Lawrence Schloss

Person

Palo Alto, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-layer feature fill
- Patent number 12,014,928
- Issue date Jun 18, 2024
- Lam Research Corporation
- Xiaolan Ba
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for preventing line bending during metal fill process
- Patent number 11,355,345
- Issue date Jun 7, 2022
- Lam Research Corporation
- Adam Jandl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal fill process for three-dimensional vertical NAND wordline
- Patent number 11,348,795
- Issue date May 31, 2022
- Lam Research Corporation
- Lawrence Schloss
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,063,214
- Issue date Jul 13, 2021
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Conductive metal oxide structures in non-volatile re-writable memor...
- Patent number 10,803,935
- Issue date Oct 13, 2020
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 10,680,171
- Issue date Jun 9, 2020
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for preventing line bending during metal fill process
- Patent number 10,573,522
- Issue date Feb 25, 2020
- Lam Research Corporation
- Adam Jandl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming low resistivity fluorine free tungsten film without nucleation
- Patent number 10,546,751
- Issue date Jan 28, 2020
- Lam Research Corporation
- Hanna Bamnolker
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Conductive metal oxide structures in non-volatile re-writable memor...
- Patent number 10,311,950
- Issue date Jun 4, 2019
- Unity Semiconductor Corporation
- Lawrence Schloss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 10,224,480
- Issue date Mar 5, 2019
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming low resistivity fluorine free tungsten film witho...
- Patent number 9,978,605
- Issue date May 22, 2018
- Lam Research Corporation
- Hanna Bamnolker
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 9,831,425
- Issue date Nov 28, 2017
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductive metal oxide structures in non-volatile re-writable memor...
- Patent number 9,767,897
- Issue date Sep 19, 2017
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Grant
Tungsten films having low fluorine content
- Patent number 9,754,824
- Issue date Sep 5, 2017
- Lam Research Corporation
- Lawrence Schloss
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deposition of low fluorine tungsten by sequential CVD process
- Patent number 9,613,818
- Issue date Apr 4, 2017
- Lam Research Corporation
- Xiaolan Ba
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Conductive metal oxide structures in non-volatile re-writable memor...
- Patent number 9,293,702
- Issue date Mar 22, 2016
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Grant
Back junction back contact solar cell module and method of manufact...
- Patent number 9,293,635
- Issue date Mar 22, 2016
- REC Solar Pte. Ltd.
- Richard Hamilton Sewell
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 9,159,913
- Issue date Oct 13, 2015
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductive metal oxide structures in non volatile re-writable memor...
- Patent number 8,848,425
- Issue date Sep 30, 2014
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductive metal oxide structures in non volatile re writable memor...
- Patent number 8,565,006
- Issue date Oct 22, 2013
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Grant
Array operation using a schottky diode as a non-ohmic selection device
- Patent number 8,565,039
- Issue date Oct 22, 2013
- Unity Semiconductor Corporation
- Roy Lambertson
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device ion barrier
- Patent number 8,493,771
- Issue date Jul 23, 2013
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold device for a memory array
- Patent number 8,395,928
- Issue date Mar 12, 2013
- Unity Semiconductor Corporation
- Julie Casperson Brewer
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductive metal oxide structures in non-volatile re-writable memor...
- Patent number 8,358,529
- Issue date Jan 22, 2013
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductive metal oxide structures in non volatile re writable memor...
- Patent number 8,320,161
- Issue date Nov 27, 2012
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Grant
Non volatile memory device ion barrier
- Patent number 8,274,817
- Issue date Sep 25, 2012
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device using ion implant isolated conductive metal oxide
- Patent number 8,268,667
- Issue date Sep 18, 2012
- Unity Semiconductor Corporation
- Darrell Rinerson
- F04 - POSITIVE DISPLACEMENT MACHINES FOR LIQUIDS PUMPS FOR LIQUIDS OR ELASTIC...
Information Patent Grant
Array operation using a schottky diode as a non ohmic selection device
- Patent number 8,254,196
- Issue date Aug 28, 2012
- Unity Semiconductor Corporation
- Roy Lambertson
- G11 - INFORMATION STORAGE
Information Patent Grant
Data retention structure for non-volatile memory
- Patent number 8,208,284
- Issue date Jun 26, 2012
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MULTI-LAYER FEATURE FILL
- Publication number 20240282580
- Publication date Aug 22, 2024
- LAM RESEARCH CORPORATION
- Xiaolan BA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TUNGSTEN WORDLINE FILL IN HIGH ASPECT RATIO 3D NAND ARCHITECTURE
- Publication number 20240249949
- Publication date Jul 25, 2024
- LAM RESEARCH CORPORATION
- Erica Maxine Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NON-METAL INCORPORATION IN MOLYBDENUM ON DIELECTRIC SURFACES
- Publication number 20240234152
- Publication date Jul 11, 2024
- LAM RESEARCH CORPORATION
- Lawrence Schloss
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NON-METAL INCORPORATION IN MOLYBDENUM ON DIELECTRIC SURFACES
- Publication number 20240136192
- Publication date Apr 25, 2024
- LAM RESEARCH CORPORATION
- Lawrence Schloss
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LOW RESISTANCE GATE OXIDE METALLIZATION LINER
- Publication number 20230290639
- Publication date Sep 14, 2023
- LAM RESEARCH CORPORATION
- Lawrence Schloss
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MOLYBDENUM FILL
- Publication number 20220375792
- Publication date Nov 24, 2022
- LAM RESEARCH CORPORATION
- Lawrence SCHLOSS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PREVENTING LINE BENDING DURING METAL FILL PROCESS
- Publication number 20220262640
- Publication date Aug 18, 2022
- LAM RESEARCH CORPORATION
- Adam Jandl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER FEATURE FILL
- Publication number 20210313183
- Publication date Oct 7, 2021
- LAM RESEARCH CORPORATION
- Xiaolan Ba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20210193917
- Publication date Jun 24, 2021
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20210098063
- Publication date Apr 1, 2021
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20200259079
- Publication date Aug 13, 2020
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METAL FILL PROCESS FOR THREE-DIMENSIONAL VERTICAL NAND WORDLINE
- Publication number 20200211853
- Publication date Jul 2, 2020
- LAM RESEARCH CORPORATION
- Lawrence Schloss
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PREVENTING LINE BENDING DURING METAL FILL PROCESS
- Publication number 20200144066
- Publication date May 7, 2020
- LAM RESEARCH CORPORATION
- Adam Jandl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20190371396
- Publication date Dec 5, 2019
- UNITY SEMICONDUCTOR CORPORATION
- Lawrence Schloss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20190173006
- Publication date Jun 6, 2019
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FORMING LOW RESISTIVITY FLUORINE FREE TUNGSTEN FILM WITHOUT NUCLEATION
- Publication number 20180240675
- Publication date Aug 23, 2018
- LAM RESEARCH CORPORATION
- Hanna Bamnolker
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20180130946
- Publication date May 10, 2018
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20180114573
- Publication date Apr 26, 2018
- UNITY SEMICONDUCTOR CORPORATION
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PREVENTING LINE BENDING DURING METAL FILL PROCESS
- Publication number 20180053660
- Publication date Feb 22, 2018
- LAM RESEARCH CORPORATION
- Adam Jandl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING LOW RESISTIVITY FLUORINE FREE TUNGSTEN FILM WITHO...
- Publication number 20170117155
- Publication date Apr 27, 2017
- LAM RESEARCH CORPORATION
- Hanna Bamnolker
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TUNGSTEN FILMS HAVING LOW FLUORINE CONTENT
- Publication number 20160351444
- Publication date Dec 1, 2016
- LAM RESEARCH CORPORATION
- Lawrence Schloss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION OF LOW FLUORINE TUNGSTEN BY SEQUENTIAL CVD PROCESS
- Publication number 20160351401
- Publication date Dec 1, 2016
- LAM RESEARCH CORPORATION
- Xiaolan Ba
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20160267973
- Publication date Sep 15, 2016
- UNITY SEMICONDUCTOR CORPORATION
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20150380642
- Publication date Dec 31, 2015
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20150029780
- Publication date Jan 29, 2015
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON VOLATILE RE WRITABLE MEMOR...
- Publication number 20140367629
- Publication date Dec 18, 2014
- UNITY SEMICONDUCTOR CORPORATION
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Application
ARRAY OPERATION USING A SCHOTTKY DIODE AS A NON-OHMIC SELECTION DEVICE
- Publication number 20140014893
- Publication date Jan 16, 2014
- UNITY SEMICONDUCTOR CORPORATION
- Roy Lambertson
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON VOLATILE RE WRITABLE MEMOR...
- Publication number 20140009998
- Publication date Jan 9, 2014
- UNITY SEMICONDUCTOR CORPORATION
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Application
BACK JUNCTION BACK CONTACT SOLAR CELL MODULE AND METHOD OF MANUFACT...
- Publication number 20130240022
- Publication date Sep 19, 2013
- Renewable Energy Corporation ASA
- Richard Hamilton SEWELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON VOLATILE RE WRITABLE MEMOR...
- Publication number 20130214233
- Publication date Aug 22, 2013
- UNITY SEMICONDUCTOR CORPORATION
- Lawrence Schloss
- G11 - INFORMATION STORAGE

Lawrence Schloss

Person

Patents Grantslast 30 patents

Multi-layer feature fill

Two-terminal reversibly switchable memory device

Method for preventing line bending during metal fill process

Metal fill process for three-dimensional vertical NAND wordline

Two-terminal reversibly switchable memory device

Conductive metal oxide structures in non-volatile re-writable memor...

Two-terminal reversibly switchable memory device

Method for preventing line bending during metal fill process

Forming low resistivity fluorine free tungsten film without nucleation

Conductive metal oxide structures in non-volatile re-writable memor...

Two-terminal reversibly switchable memory device

Method of forming low resistivity fluorine free tungsten film witho...

Two-terminal reversibly switchable memory device

Conductive metal oxide structures in non-volatile re-writable memor...

Tungsten films having low fluorine content

Deposition of low fluorine tungsten by sequential CVD process

Conductive metal oxide structures in non-volatile re-writable memor...

Back junction back contact solar cell module and method of manufact...

Two-terminal reversibly switchable memory device

Conductive metal oxide structures in non volatile re-writable memor...

Conductive metal oxide structures in non volatile re writable memor...

Array operation using a schottky diode as a non-ohmic selection device

Non-volatile memory device ion barrier

Threshold device for a memory array

Conductive metal oxide structures in non-volatile re-writable memor...

Conductive metal oxide structures in non volatile re writable memor...

Non volatile memory device ion barrier

Memory device using ion implant isolated conductive metal oxide

Array operation using a schottky diode as a non ohmic selection device

Data retention structure for non-volatile memory

Patents Applicationslast 30 patents

MULTI-LAYER FEATURE FILL

TUNGSTEN WORDLINE FILL IN HIGH ASPECT RATIO 3D NAND ARCHITECTURE

NON-METAL INCORPORATION IN MOLYBDENUM ON DIELECTRIC SURFACES

NON-METAL INCORPORATION IN MOLYBDENUM ON DIELECTRIC SURFACES

LOW RESISTANCE GATE OXIDE METALLIZATION LINER

MOLYBDENUM FILL

METHOD FOR PREVENTING LINE BENDING DURING METAL FILL PROCESS

MULTI-LAYER FEATURE FILL

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

METAL FILL PROCESS FOR THREE-DIMENSIONAL VERTICAL NAND WORDLINE

METHOD FOR PREVENTING LINE BENDING DURING METAL FILL PROCESS

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

FORMING LOW RESISTIVITY FLUORINE FREE TUNGSTEN FILM WITHOUT NUCLEATION

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

METHOD FOR PREVENTING LINE BENDING DURING METAL FILL PROCESS

METHOD OF FORMING LOW RESISTIVITY FLUORINE FREE TUNGSTEN FILM WITHO...

TUNGSTEN FILMS HAVING LOW FLUORINE CONTENT

DEPOSITION OF LOW FLUORINE TUNGSTEN BY SEQUENTIAL CVD PROCESS

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

CONDUCTIVE METAL OXIDE STRUCTURES IN NON VOLATILE RE WRITABLE MEMOR...

ARRAY OPERATION USING A SCHOTTKY DIODE AS A NON-OHMIC SELECTION DEVICE

CONDUCTIVE METAL OXIDE STRUCTURES IN NON VOLATILE RE WRITABLE MEMOR...

BACK JUNCTION BACK CONTACT SOLAR CELL MODULE AND METHOD OF MANUFACT...

CONDUCTIVE METAL OXIDE STRUCTURES IN NON VOLATILE RE WRITABLE MEMOR...