Patent Application
20240249949
Deposition of materials including tungsten-containing materials is an integral part of many semiconductor fabrication processes. These materials may be used for horizontal interconnects, vias between adjacent metal layers, and contacts between metal layers and devices. As devices shrink and more complex patterning schemes are utilized in the industry, deposition of tungsten films becomes a challenge. The continued decrease in feature size and film thickness bring various challenges including high resistivity for thinner films and difficulty in obtaining void-free fill in features. Deposition in complex high aspect ratio structures such as 3D NAND structures is particularly challenging.
The background description provided herein is for the purposes of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.
One aspect of the disclosure relates to a semiconductor processing apparatus that includes a first showerhead; a dual inlet chamber having a first inlet, a second inlet, an outlet fluidly connected to the first showerhead; a first gas zone; and a second gas zone. The first gas zone includes a first process gas manifold, the first process gas manifold has: one or more first process gas charge volumes, a first divert valve fluidically connected to the one or more first process gas charge volumes, and a first injection process gas valve fluidically connected to the first divert process gas valve, where the first process gas manifold is configured to be fluidically connected to one or more first process gas sources via the one or more first process gas charge volumes; and the first process gas manifold, via the first injection process gas valve, is fluidically connected to the first inlet of the dual inlet chamber. The second gas zone includes a second process gas manifold, the second process gas manifold has: one or more second process gas charge volumes, a second divert valve fluidically connected to the one or more second process gas charge volumes, and a second injection process gas valve fluidically connected to the second divert process gas valve, where the second process gas manifold is configured to be fluidically connected to one or more second process gas sources via the one or more second process gas charge volumes; and the second process gas manifold, via the second injection process gas valve, is fluidically connected to the second inlet of the dual inlet chamber, where the first gas zone is separate from the second gas zone upstream of the dual inlet chamber.
In some implementations of the semiconductor processing apparatus, the semiconductor processing apparatus may include a divert manifold fluidically connected to the first process gas manifold via the first divert process gas valve and the second process gas manifold via the second divert process gas valve.
In some implementations of the semiconductor processing apparatus, the semiconductor processing apparatus may include a multi-station chamber having a first station with the first showerhead and one or more additional stations each having a showerhead.
In some implementations of the semiconductor processing apparatus, at least one station of the multi-station chamber is fluidically connected to no more than one gas zone.
In some implementations of the semiconductor processing apparatus, the dual inlet chamber includes an annulus surrounding a main line connected to the outlet.
In some implementations of the semiconductor processing apparatus, the second inlet is at the side of the annulus.
Another aspect of the disclosure relates to a method including: providing a 3-D structure of a partially manufactured semiconductor substrate to a chamber having a chamber pressure of no more than 100 Torr, the 3-D structure including sidewalls, a plurality of openings in the sidewalls leading to a plurality of features having a plurality of interior regions fluidically accessible through the openings to a chamber; depositing a first layer of tungsten within the 3-D structure such that the first layer lines the plurality of features of the 3-D structure; and treating the first layer non-conformally such that that the treatment is preferentially applied at portions of the first layer near the plurality of openings relative to the plurality of interior regions; and depositing a second layer of tungsten within the 3-D structure on the first layer such that the second layer at least partially fills the plurality of interior regions of the 3-D structure; where treating the first layer non-conformally includes charging a gas including nitrogen trifluoride (NF3) to a first charge pressure of least 10 Torr and flowing the gas to the chamber.
In some embodiments, the treatment inhibits tungsten deposition.
In some embodiments, depositing a layer of tungsten includes an atomic layer deposition using tungsten hexafluoride (WF6) and hydrogen (H2).
In some embodiments, depositing a layer of tungsten includes delivering pulses of a tungsten precursor and hydrogen to the chamber via a showerhead.
In some embodiments, depositing tungsten includes delivering a tungsten precursor and hydrogen to a showerhead via a dual inlet chamber.
In some embodiments, the tungsten precursor and hydrogen are injected at a first inlet of the dual inlet chamber.
In some embodiments, the gas including NF3 is injected at a second inlet of the dual inlet chamber.
In some embodiments, an inert gas is injected in the first inlet of the dual inlet chamber while the NF3 is injected at the second inlet of the dual inlet chamber.
In some embodiments, the tungsten precursor and hydrogen gas are supplied through a first gas manifold and the NF3 is supplied through a second gas manifold.
In some embodiments, the method further includes depositing a nucleation layer within the 3-D structure such that nucleation layer lines the plurality of features of the 3-D structure.
In some embodiments, depositing the nucleation layer takes place at a first station in the chamber and the deposition of the first layer of tungsten, the treatment, and the deposition of the second layer of tungsten takes place in a second station in the chamber.
These and other aspects of the disclosure are described below with reference to the drawings.
In the following description, numerous specific details are set forth to provide a thorough understanding of the presented embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail to not unnecessarily obscure the disclosed embodiments. While the disclosed embodiments will be described in conjunction with the specific embodiments, it will be understood that it is not intended to limit the disclosed embodiments.
Provided herein are methods of filling features with tungsten (W). The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as 3D NAND wordlines.
The methods described herein are performed on a substrate that may be housed in a chamber. The substrate may be a silicon or other semiconductor wafer, e.g., a 200-mm wafer, a 300-mm wafer, or a 450-mm wafer, including wafers having one or more layers of material, such as dielectric, conducting, or semi-conducting material deposited thereon. The methods are not limit to semiconductor substrates and may be performed to fill any feature with tungsten.
Substrates may have features such as via or contact holes, which may be characterized by one or more of narrow and/or re-entrant openings, constrictions within the feature, and high aspect ratios. A feature may be formed in one or more of the above described layers. For example, the feature may be formed at least partially in a dielectric layer. In some embodiments, a feature may have an aspect ratio of at least about 2:1, at least about 4:1, at least about 6:1, at least about 10:1, at least about 25:1, or higher. One example of a feature is a hole or via in a semiconductor substrate or a layer on the substrate.
In some embodiments, the methods are used for wordline fill in 3-D NAND structures.
The wordline features in a 3-D NAND stack may be formed by depositing an alternating stack of silicon oxide and silicon nitride layers, and then selectively removing the nitride layers leaving a stack of oxides layers having gaps between them. These gaps are the wordline features. Any number of wordlines may be vertically stacked in such a 3-D NAND structure so long as there is a technique for forming them available, as well as a technique available to successfully accomplish (substantially) void-free fills of the vertical features. Thus, for example, a 3-D NAND stack may include between 2 and 256 horizontal wordline features, or between 8 and 128 horizontal wordline features, or between 16 and 64 horizontal wordline features, and so forth (the listed ranges understood to include the recited end points).
Filling three-dimensional structures may use longer and/or more concentrated exposure to precursors to allow the innermost and bottommost areas to be filled.
Examples of feature fill for horizontally-oriented and vertically-oriented features are described below. It should be noted that in at least most cases, the examples are applicable to both horizontally-oriented and vertically-oriented features. Moreover, it should also be noted that in the description below, the term “vertical” may be used to refer to a direction generally orthogonal to the plane of the substrate and the term “lateral” to refer to a direction generally parallel to the plane of the substrate.
Next, in an operation 204, the deposited tungsten film is non-conformally treated by nitrogen trifluoride (NF3). Non-conformal treatment in this context refers to the treatment being preferentially applied at and near the opening or openings of the feature than in the feature interior. For 3D NAND structures, the treatment may be conformal in the vertical direction such that the bottom wordline feature is treated to approximately the same extent as the top wordline feature, while non-conformal in that the interior of the wordline features are not exposed to the treatment or to a significantly lesser extent than the feature openings.
In some embodiments, the NF3 treatment both inhibits tungsten nucleation and etches deposited tungsten. Nucleation inhibition inhibits subsequent tungsten nucleation at the treated surfaces. It can involve one or more of: deposition of an inhibition film, reaction of treatment species with the W film to form a compound film, and adsorption of inhibition species. During the subsequent deposition operation, there is a nucleation delay on the inhibited portions of the underlying film relative to the non- or lesser-inhibited portions. Etch removes deposited film at the treated surfaces. This can involve reacting an etchant species with the tungsten film to form a gaseous byproduct that is then removed.
Other gases such as ammonia (NH3) may be used for thermal inhibition processes. However, using NF3 offers advantages over other treatments. One advantage is that NF3 both inhibits tungsten nucleation and etches deposited tungsten from the treated surfaces. Nitrogen acts as an inhibition species and fluorine act as an etchant. To perform a purely inhibition treatment, operation 204 can involve exposing the W film to a nitrogen-containing chemistry that does not contain fluorine or other halogens. To perform a purely etch treatment, operation 204 can involve exposing the W film to a halogen-containing chemistry that does not contain nitrogen. Treating the W film with NF3, a nitrogen-containing and halogen-containing chemistry, inhibits W nucleation and etches the W film. Moreover, as discussed further below, NF3 allows the inhibition and deposition operations to be performed in the same station with a single plenum showerhead.
In some embodiments, a treatment gas is pressurized to level significantly higher than the chamber pressure prior to introduction to chamber. This facilitates the gas reaching the bottommost portion of the vertical structure. In the example of NF3 gas, the NF3 gas may be pressurized in a charge volume to a pressure between 10 Torr and 1000 Torr. In some embodiments, the pressure is between 400 Torr and 500 Torr. Charge volumes are discussed further below.
As discussed further below, operation 204 may be a continuous flow or pulsed process. In the latter case, different gases may be pulsed in sequence to tune the treatment.
After operation 204, a second deposition is performed in operation 206. The second deposition may be performed by an ALD or CVD process. For deposition into 3D NAND structures, an ALD process may be used to allow for good step coverage throughout the structure. Gases more easily reach feature interiors due to the effects of the treatment. After an etch process, film deposited near the feature entrance is removed, allowing more space for gases to reach the interior of the feature and preventing pinch-off. In some embodiments, enough W film may be removed such that an underlying surface is wholly or partially exposed, increasing nucleation delay at these areas. After an inhibition process, nucleation delay is increased, allowing an inside-out fill process. Operation 206, which may be referred to as a Dep2 process, may complete fill of the structures in some embodiments. In other embodiments, one more additional treatment/deposition operations may be performed.
To tailor lateral non-conformality in the wordlines, pressure and treatment gas flow rate may be adjusted. Higher chamber pressure and lower treatment gas flow rate (and/or concentration) promotes treatment at the openings of the wordline features over treatment within the interiors of the wordline features. Thus, in some embodiments, chamber pressure may lower from operation 202 to 204. Example chamber pressures range from 3 Torr to 40 Torr.
According to various embodiments, operations 202, 204, and 206 may be performed in the same processing chamber or in different processing chambers. If performed in the same chamber, they may be performed in a single-station or multi-station chamber. In a multi-station chamber, various operations may be performed at various stations. For example, operation 202 may be performed in a first station and operation 204 in a second station. In another example, operation 202 and operation 206 may be performed in a first station and operation 204 in a second station. In some embodiments, while various operations are performed in separate stations within a single chamber, only a single operation, i.e., operation 202, depositing W film in a structure, may be performed at a time. In another embodiment, when multiple substrates are being processed, various operations may occur concurrently. For example, a first substrate is at station one for operation 202 and a second substrate is at station two for operation 204 in the same multi-station chamber. Both operation 202 and operation 204 may proceed concurrently in the same multi-station chamber. In some embodiments, chamber pressure may be low to prevent any cross-contamination or safety issues. In one example, in operation 202, a nucleation layer may be deposited using a boron-containing reducing agent (e.g., B2H6) in station one on a first substrate. A second substrate may be undergoing operation 204 in a second station. Both the nucleation layer deposition of B2H6 in station one and the deposition of NF3 in station two can occur concurrently in the same multi-station chamber. To achieve this, the chamber pressure is set to a lower pressure, such as a pressure below 25 Torr.
At 370, the wordline feature is shown after a Dep1 process. An under-layer 306 is shown; this may be for example a titanium nitride (TiN), tungsten nitride (WN), or tungsten carbonitride (WCN) barrier layer. A conformal W film 305 lines the feature surfaces including the surfaces of the under-layer 306. In some embodiments, the conformal W film 305 is deposited directly on a dielectric surface such as an aluminum oxide or silicon oxide surface. The W layer 305 may be a nucleation layer, a nucleation and a bulk layer, or a bulk layer.
Next, the feature is exposed to an inhibition chemistry to inhibit portions 365 at 371. In this example, the portions 365 through pillar constrictions 351 are inhibited while the surfaces of the interior at 352 are not inhibited. Thus, in the example of
Next, a process is performed to selectively deposit W accordance with the inhibition profile: bulk W 308 is preferentially deposited on the non-inhibited portions of the W layer 305, such that hard-to-fill regions behind constrictions are filled, at 372.
In this example, the bulk deposition continues, filling the remainder of the feature with bulk W 308 at 373.
This is followed by a non-conformal etch (with high selectivity to protect the under-layer 406 if present) at 471. For example, a non-conformal etch having high W: TiN selectivity may be performed for TiN under-layers. As a result of the non-conformal etch, the conformal W layer 405 is left intact in the interior 452 of the feature, while thinned or completely removed at the feature openings 422. As in
Next, bulk W 408 is deposited on the remaining portions of the W layer 405, such that hard-to-fill regions behind constrictions are filled, at 472. In this example, the bulk deposition continues, filling the remainder of the feature with bulk W 408 at 473. In some embodiments, a dep-etch-dep operation can be repeated to fill the feature. According to various implementations, each subsequent deposition operation may or may not include deposition of a nucleation layer. In some implementations, the treatment may also include an inhibition effect.
As discussed above, the treatment of NF3 inhibits nucleation and etches tungsten film. The inhibition in
In some embodiments, Dep1 is used to deposit a nucleation layer and Dep2 to deposit a bulk layer. In some embodiments, Dep1 and Dep2 each are used to deposit bulk W layers, Dep1 to deposit a conformal bulk layer and Dep2 to fill the feature in the examples of
In some embodiments, the conformal W layer may be characterized as low resistivity and, in some embodiments, low stress and/or low fluorine. Because the wordline features are unfilled (with the exception of the nucleation layer if deposited), a relatively fast deposition technique may be used. In some embodiments, this involves alternating pulses of a W-containing precursor, such as tungsten hexafluoride (WF6), and hydrogen (H2) or other reducing agent to deposit the first tungsten layer in an ALD process. Purge operations may separate the pulses. Relatively short pulse times may be used for deposition to increase throughput.
The second bulk layer deposited in the Dep2 operation may be deposited using a second set of conditions than the first layer bulk layer. Like the first bulk layer, the second bulk layer may be a low resistivity layer, and in some embodiments, a low stress and/or low fluorine layer. In some embodiments, operation 206 involves increased pulse times and increased purge times relative to operation 202. In particular embodiments, W-containing precursor pulse times may be increased. Increasing pulse and/or purge times can facilitate reactants diffusing into the wordlines. In some embodiments, the temperature may also be changed from operation 202 to operation 206, for example, higher temperature may be used to speed reaction time. In some embodiments, a lower temperature may be used to allow the reactants to diffuse into the wordline features before reaction. In some embodiments, the second set of conditions may include a change in flowrates. For example, the flow rate of the W-containing precursor and/or reducing agent may be increased.
In some embodiments, a third bulk W layer may be deposited at different conditions. This layer may be characterized as an overburden layer that is removed in a subsequent step and can be deposited on sidewalls such as sidewalls 140 in the 3D NAND structure of
In the examples above, NF3 is used as the treatment gas. In other embodiments, another gas may be used, such as another nitrogen and halogen-containing gas or gas mixture. In some embodiments, there may be a surface morphology treatment that is performed after NF3 or other inhibition and/or etch treatment. This is discussed further with respect to
In
Example nitrogen-containing gases for inhibition include NF3, NH3, nitrogen (N2), and hydrazine (N2H4).
Example halogen-containing gases for etching include NF3, F2, hydrogen fluoride (HF), chlorine (Cl2), chlorine trifluoride (CF3), and other Cl-containing or F-containing gases. Without a reducing agent to react with, these will etch the film.
Next in an operation 504, there may be a purge with a non-halogen gas. An inert gas such as argon (Ar) or helium (He) may be used. N2 may also be used. The purge is a non-plasma process that can remove surface chlorine or fluorine species. In some embodiments (e.g., in which the substrate is not exposed to chlorine or fluorine species in operation 502) operation 504 may be omitted.
Next, in an operation 506, the surface may be exposed to a surface morphology treatment gas. It has been found that inhibition treatments can result in a “rough” surface that can adversely affect the quality of the film deposited in Dep2. The surface morphology treatment gas may be a pulsed or continuous flow of a tungsten precursor, a reducing agent (e.g., H2), or both.
In some embodiments, operations 502-506 are repeated one or more times. For example, each of the operations can be performed as a pulse in a multi-cycle sequence of pulses. In alternate embodiments, operation 502 may be performed as multiple cycles of pulses with one or both of operations 504 and 506 performed only at the completion of the multiple cycles. The order of operations 504 and 506 may be reversed in some embodiments.
The methods described involve reacting a tungsten-containing precursor (also referred to as a tungsten precursor) with a reducing agent to form an elemental tungsten film.
Various tungsten-containing gases including, but not limited to tungsten hexafluoride (WF6), tungsten hexachloride (WCl6), and tungsten hexacarbonyl (W(CO)6) can be used as the tungsten-containing precursor. In certain implementations, the tungsten-containing precursor is a halogen-containing compound, such as WF6. In certain implementations, the reducing agent is hydrogen gas, though other reducing agents may be used including silane (SiH4), disilane (Si2H6) hydrazine (N2H4), diborane (B2H6) and germane (GeH4). In many implementations, hydrogen gas is used as the reducing agent in the deposition of a bulk tungsten film. In some other implementations, a tungsten precursor that can decompose to form a bulk tungsten layer can be used without a reducing agent.
Deposition may proceed according to various implementations until a certain feature profile is achieved and/or a certain amount of tungsten is deposited. In some implementations, the deposition time and other relevant parameters may be determined by modeling and/or trial and error. For example, for an initial deposition for an inside out fill process in which tungsten can be conformally deposited in a feature until pinch-off, it may be straightforward to determine based on the feature dimensions the tungsten thickness and corresponding deposition time that will achieve pinch-off. In some implementations, a process chamber may be equipped with various sensors to perform in-situ metrology measurements for end-point detection of a deposition operation. Examples of in-situ metrology include optical microscopy and X-Ray Fluorescence (XRF) for determining thickness of deposited films.
It should be understood that the tungsten films described herein may include some amount of other compounds, dopants and/or impurities such as nitrogen, carbon, oxygen, boron, phosphorous, sulfur, silicon, germanium and the like, depending on the particular precursors and processes used. The tungsten content in the film may range from 20% to 100% (atomic) tungsten. In many implementations, the films are tungsten-rich, having at least 50% (atomic) tungsten, or even at least about 60%, 75%, 90%, or 99% (atomic) tungsten. In some implementations, the films may be a mixture of metallic or elemental tungsten (W) and other tungsten-containing compounds such as tungsten carbide (WC), tungsten nitride (WN), etc. CVD and ALD deposition of these materials can include using any appropriate precursors. For example, CVD and ALD deposition of tungsten nitride can include using halogen-containing and halogen-free tungsten-containing and nitrogen-containing compounds as described further below.
As described above, the NF3 treatment has lateral non-conformality but top-to-bottom uniformity.
In some embodiments, charge volumes may be used to deliver gas to achieve lateral non-conformality but have top-to-bottom uniformity. Using charge volumes can enable delivering treatment gases to the bottom of high aspect ratio structures, such as to the bottom wordline of 3D NAND structures. The pressurized gas flows from the charge volume through a showerhead and reaches the substrate.
An example apparatus is shown schematically in
In the described example, the deposition gases include a metal precursor gas such as tungsten hexafluoride (WF6) and hydrogen (H2). Examples of metal precursor gases are provided below. The purge gas may be argon (Ar) or other chemically inert gas. The inhibition gas may be nitrogen trifluoride (NF3), which can be used to inhibit nucleation on the deposited metal. H2 and NF3 are chemically incompatible as they can react explosively. Other examples of inhibition gases as well as other gases that may be supplied in the second gas zone are provided below.
The showerhead 602 distributes gases to the chamber (not shown). Fluidically interposed between the showerhead 602 and the two gas zones is a dual inlet chamber 604. The dual inlet chamber 604 is fluidically connected to the first gas zone 606 and the second gas zone 608. The dual inlet chamber 604 has a first inlet 626 and a second inlet 628. Each gas zone connects to one of the two inlets of the dual inlet chamber 604. In the example shown in
In some embodiments, the dual inlet chamber 604 may be used to flow gases separately from each gas zone to the showerhead. The individual gases from each gas zone may mix in the dual inlet chamber 604. The dual inlet chamber 604 may be used to mix gases from the first gas zone 606 and the second gas zone 608 prior to the gas mixture flowing to the chamber via the showerhead 602. However, this may be avoided in situations in which the gas flows include chemically incompatible gases.
In some embodiments, the dual inlet chamber 604 includes an annulus. Further details of the dual inlet chamber 604 are provided below.
In the example of
The inhibition gas manifold 612 includes an injection valve 618E, a divert gas valve 620E, and a charge volume 614E. The three components, the injection valve 618E, the divert gas valve 620E, and the charge volume 614E, are fluidically connected to each other via a main inhibition gas line 632 with the divert gas valve being fluidically interposed between the injection valve and the charge volume. The injection valve 618E is fluidically connected to the dual inlet chamber 604 and fluidically interposed between the dual inlet chamber and the divert gas valve 620E. The injection valve 618E may be used to control the flow of inhibition gas from the inhibition gas manifold 612 into the dual inlet chamber 604. The divert gas valve 620E is fluidically connected to a divert manifold 622 and directs the flow of inhibition gas from the charge volume 614E to the injection valve 618E or to the divert manifold 622. The divert manifold 622 may be used to relieve pressure from the inhibition gas manifold 612, to clear the inhibition gas manifold 612 of gas, or to stabilize the flow of inhibition gases. When inhibition gas is being flowed into the showerhead, the divert manifold 622 may be used to relieve pressurize gas, ensuring the gas flows from the inhibition gas manifold 612 is stabilized before reaching the showerhead 602. The divert manifold 622 can be used to discharge any gas remaining in the inhibition gas manifold 612, including inhibition gas still in the charge volume 614E. In some cases, it may desirable to clear the inhibition gas manifold 612 of all gases prior to the flow of additional inhibition gas into the inhibition gas manifold. The charge volume 614E is fluidically interposed between the inhibition gas source 616E and the divert gas valve 620E. The charge volume 614E stores and pressurizes the inhibition gas from the inhibition gas source 616E. When either the divert gas valve 620E is closed or when the divert gas valve directs the flow of gas to the injection valve 618E and the injection valve is closed, gas may be flowed from the inhibition gas source 616E to the charge volume 614E where the gas is stored and pressurized.
In one example, the second gas zone 608—includes NF3. When the NF3 gas is not being used in the process, the injection valve 618E is closed to prevent NF3 gas from being flowed into the dual inlet chamber 604. The inhibition gas source 616E flows NF3 gas into main inhibition gas line 632 and into the charge volume 614E. Since the injection valve 618 is closed, the NF3 gas will fill the charge volume 614E and will become pressurized. The pressurized NF3 gas increases the mass flow rate of the gas when the gas is released by opening the injection valve 618. When the process uses the flow of NF3 to the substrate, the injection valve 618E is opened. The pressurized NF3 gas flows into the dual inlet chamber 604 and into the showerhead 602.
While the inhibition gas pressure is building in the charge volume 614E, the showerhead 602 may flow process gas from the first gas zone 606 into the chamber. The first gas zone 606 has a process gas manifold 610 and at least one gas source 616. In the embodiment shown, there are four different gas sources 616. In some embodiments, there may be a single gas source 616. In other embodiments, there may be multiple gas sources. As indicated above, examples of gases supplied from the gas sources are Ar, H2, and WF6. In the embodiment shown, there are four individual gas sources 616. Each process gas source 616A, 616B, 616C, and 616D supplies a gas to a separate line within the process gas manifold 610. In some embodiments, the gas type for each gas source 616 may be unique for each line, e.g., the gas in 616A is different than the gas in 616B, the gas in 616A and 616B are different than the gas in 616C, etc. In other embodiments, the same gas may be used as the gas for two or more gas sources, e.g., the gas in process gas source 616A may be the same gas as in the gas source 616B.
The first gas zone 606 has the process gas manifold 610. In the embodiment shown, the process gas manifold 610 has an injection valve 618A, a divert gas valve 620A, and charge volumes 614 with corresponding charge volume valves 624. The injection valve 618A fluidically connects the gas from the process gas manifold 610 to the dual inlet chamber 604. The divert gas valve 620A is fluidically interposed between the injection valve 618A and the charge volume valves 624. The injection valve 618A, the divert gas valves 620A, and charge volume valves 624 are fluidically connected via a main process gas line 630. Similar to the divert gas valve 620E in the inhibition gas manifold 612, the divert gas valve 620A in the process gas manifold 610 can divert gas within the main process gas line 630 and/or from the charge volumes 614 to the divert manifold 622.
Process gas from the process gas sources 616 are flowed into the corresponding charge volumes 614. When a charge volume valve 624 is closed, the process gas from a corresponding gas source 616 may fill the corresponding charge volume 614. As the process gas from the process gas sources 616 fills the charge volume 614, the gas may become pressurized. The charge volumes 614 store the pressurize gas until the gas is released into the main process gas line 630 by opening the corresponding charge volume valve 624.
In one example, WF6 gas is provided by the process gas source 616A. When WF6 is not used for wafer processing, the charge volume valve 624A is closed. The process gas source 616A flows WF6 into the charge volume 614A. The WF6 gas fills the charge volume 614A and becomes pressurized. When the WF6 gas is pressurized to a desired pressure in the charge volume 614A, the process gas source 616A ceases flow of WF6 gas into the charge volume. Once wafer processing in the chamber uses WF6 gas, the charge volume valves 624B, 624C, and 624D for the other gases close, preventing the gas in the other charge volumes 614 from flowing into the main process gas line 630. Similarly, the injection valve 618E from the inhibition gas manifold 612 is closed to prevent inhibition gas from entering the dual inlet chamber 604. The charge volume valve 624A for the WF6 gas is opened and the WF6 gas stored within the charge volume 614 flows into the main process gas line 630. The WF6 gas flows through the divert gas valve 620A and through the injection valve 618A into the dual inlet chamber 604. From the dual inlet chamber 604, the gas flows into the showerhead 602 before being injected into the chamber for wafer processing.
In the process described in
After the NF3 gas is flowed, a purge is performed. The purge may clear any remaining NF3 gas in the showerhead 602, the dual inlet chamber 604, and the lines. One the flow path for the H2 gas is purged and cleared of NF3 gas, H2 gas can be flowed into the process chamber. An inert gas coming from the second gas zone 608 is flowed to the dual inlet chamber 604 and used to prevent H2 gas from flowing back up stream towards the NF3 gas. In addition, the injection valve 618E may be closed to prevent NF3 gas from flowing into the dual inlet chamber 604 and mixing with the H2 gas.
In multi-station chambers, each station has a corresponding showerhead 602. Depending on the tool configuration, each station may also have a corresponding process gas manifold 610 and inhibition gas manifold 612. In some embodiments, some stations in the multi-station chamber have only a process gas manifold 610 while other stations have both the process gas manifold 610 and the inhibition gas manifold 612. In this embodiment, the stations with both the process gas manifold 610 and the inhibition gas manifold 612 will have a corresponding dual inlet chamber 604. For example, a multi-station chamber with four stations have station one and station four supplied with corresponding process gas manifolds. Stations three and station four have both corresponding process gas manifolds 610 and corresponding inhibition gas manifolds 612. In this example, station three and station four will each have a corresponding dual inlet chamber 604 fluidically interposed between the corresponding showerhead 602 and corresponding process gas manifolds 610 and corresponding inhibition gas manifolds 612. Depending on the tool configuration, each of the process gas manifolds 610 may be supplied with the same gases or may be supplied with different gases. Similarly, depending on the tool configuration, each of the inhibition gas manifolds 612 may be supplied with the same inhibition gas or different inhibition gas.
In the example shown, the first inlet 726 fluidically connects a first inlet gas line 736 to the dual inlet chamber 704 and the second inlet 728 fluidically connects a second inlet gas line 738 to the dual inlet chamber. In some embodiments, the first inlet gas line 736 may be fluidically connected to the first gas zone (not shown) and the second inlet gas line 738 may be fluidically connected to the second gas zone (not shown) as discussed in
The dual inlet chamber 704 may have a single gas or multiple gases flowed through the dual inlet chamber and out through the outlet 734. In some embodiments, the first inlet 726 may have a gas flowed into the dual inlet chamber 704 and the second inlet 728 has a second gas flowed into the dual inlet chamber. The dual inlet chamber 704 may allow the two gases to mix and form a gas mixture of the two gases. The newly formed gas mixture may be flowed out of the dual inlet chamber 704 through the outlet 734 and into the showerhead 702 for dispersion into the processing chamber (not shown).
Below the dual inlet chamber 704 is the showerhead 702. The showerhead distributes the gas from the dual inlet chamber 704 into the chamber (not shown). The showerhead may be a single plenum or a dual plenum showerhead. The treatment process using NF3 in process 204 is advantageous over other treatment using other gases, such as ammonia (NH3), because it allows for a single plenum showerhead. NH3 gas difficult to purge and may leave residue (after a purge) in the hardware. The residue may react with other process gases such as WF6, SiH4, and B2H6. Thus, when a gas like NH3 is used for the treatment process, a dual plenum showerhead prevents cross contamination of the NH3 gas residue left in the showerhead and the other process gases. However, NF3 gas allows a single plenum showerhead to be used. While NF3 may be reactive with other process gases, a purge operation is able to clear the NF3 gas and NF3 residue from the showerhead. Thus, a single plenum may be used as long as the gases are purged from the showerhead 702 before the use of the next gas.
Each of the charge volumes 814 is fluidically connected to the injection gas valve 818A via a corresponding charge volume valve 824. The corresponding charge volume valve 824 is fluidically interposed between the injection gas valve 818A and their corresponding charge volume 814. When a charge volume valve 824 is closed, the gas flow from the corresponding charge volume 814 stops and is prevented from reaching the injection gas valve 818A. Gas flows into the charge volume 814 and pressurizes. When the charge volume valve 824 is put in the open position, the gas in the charge volume is released and flows through the process gas manifold 810.
Fluidically interposed between the charge volume valves 824 and the injection gas valve 818A is the divert gas valve 820A. The divert gas valve 820A has a divert gas valve port 844A to connect to a divert gas manifold (not shown). The divert gas valve 820A directs the flow of gas from a charge volume 814 to either the injection gas valve 818A or the divert gas valve port 844A. In some embodiments, the divert gas valve 820A may be three-way valve that can stop the flow of gas.
The injection gas valve 818A has an injection gas valve outlet 846A that fluidically connects the process gas manifold 810 with a dual inlet chamber (not shown). The injection gas valve 818A controls the flow of gas out of the process gas manifold 810. When the injection gas valve 818A is closed, flow out of the process gas manifold 810 stops. When the injection gas valve is opened, the gas from the process gas manifold flows out to the injection gas valve outlet 846A.
The inhibition gas manifold 812 has an injection gas valve 818E, a divert gas valve 820E, and a charge volume 814E fluidically connected to each other. The divert gas valve 820E is fluidically interposed between the injection gas valve 818E and the charge volume 814E. The charge volume 814E has a charge volume port 842E to connect to a gas source (not shown). The gas source provides the gas to the inhibition gas manifold 812 through the charge volume 814E. In the embodiment shown there is a single charge volume 814E and thus no charge volume valve is used. In some embodiments, there may be multiple charge volumes 814. In this case, each charge volume 814 would be in parallel to each other charge volume and each charge volume would have a corresponding charge volume valve to control the flow from the respective charge volume.
The inhibition gas manifold 812 has a divert gas valve 820E with a divert gas valve port 844E. The divert gas valve port 844E of the divert gas valve 820E fluidically connects to a divert gas manifold (not shown). Similar to the divert gas valve 820 in the process gas manifold 810, the divert gas valve directs the flow of gas from the charge volume 814E to either the injection gas valve 818E or the divert gas valve port 844E. In some embodiments, the divert gas valve 820E may be a three-way valve that can stop the flow of gas.
The injection gas valve 818E in the inhibition gas manifold 812 has an injection gas valve outlet 846E and an injection gas valve inlet 848. The injection gas valve outlet 846E fluidically connects the inhibition gas manifold 812 to the dual inlet chamber (not shown). The injection gas valve inlet 848 connects another gas, such as an inert gas, to the inhibition gas manifold 812. For example, the injection gas valve inlet 848 may be connected to Ar and be used to flow inert gas into the chamber, preventing any other process gas from flowing to the inhibition gas manifold 812. The injection gas valve 818E controls the flow of gas out of the inhibition gas manifold 812. When the injection gas valve 818E is closed, flow out of the inhibition gas manifold 812 stops, when the injection gas valve is opened, the flow of gas flows to the injection gas valve outlet 846E.
In some implementations, the methods described herein involve deposition of a tungsten nucleation layer prior to deposition of a bulk layer. In the examples described herein, the nucleation layer may be deposited as the first conformal deposition or to as a seed layer for the first conformal deposition. A nucleation layer is a thin conformal layer that facilitates subsequent deposition of bulk tungsten-containing material thereon. According to various implementations, a nucleation layer may be deposited prior to any fill of the feature and/or at subsequent points during fill of the feature. In some implementations of the method described herein, a nucleation layer is deposited only at the beginning of feature fill and is not necessary at subsequent depositions. As described above, in some embodiments, the conformal Dep1 deposition is a nucleation layer. It may also be a bulk layer deposited on a nucleation layer.
In nucleation layer deposition, pulses of a reducing agent, optional purge gases, and tungsten-containing precursor may be sequentially injected into and purged from the reaction chamber in an ALD sequence. Nucleation layer thickness can depend on the nucleation layer deposition method as well as the desired quality of bulk deposition. In general, nucleation layer thickness is sufficient to support high quality, uniform bulk deposition. Examples may range from 10 Å-100 Å.
The methods described herein are not limited to a particular method of tungsten nucleation layer deposition and include deposition of bulk tungsten film on tungsten nucleation layers formed by any method including PNL, ALD, CVD, and physical vapor deposition (PVD). Moreover, in certain implementations, bulk tungsten may be deposited directly in a feature without use of a nucleation layer. For example, in some implementations, the feature surface and/or an already-deposited under-layer supports bulk tungsten deposition. In some implementations, a bulk tungsten deposition process that does not use a nucleation layer may be performed.
In various implementations, tungsten nucleation layer deposition can involve exposure to a tungsten-containing precursor such as tungsten hexafluoride (WF6), tungsten hexachloride (WCl6), and tungsten hexacarbonyl (W(CO)6). In certain implementations, the tungsten-containing precursor is a halogen-containing compound, such as WF6. Organo-metallic precursors, and precursors that are free of fluorine such as MDNOW (methylcyclopentadienyl-dicarbonylnitrosyl-tungsten) and EDNOW (ethylcyclopentadienyl-dicarbonylnitrosyl-tungsten) may also be used.
Examples of reducing agents can include boron-containing reducing agents including diborane (B2H6) and other boranes, silicon-containing reducing agents including silane (SiH4) and other silanes, hydrazines, and germanes. In some implementations, pulses of tungsten-containing precursors can be alternated with pulses of one or more reducing agents, e.g., S/W/S/W/B/W, etc., W represents a tungsten-containing precursor, S represents a silicon-containing precursor, and B represents a boron-containing precursor. In some implementations, a separate reducing agent may not be used, e.g., a tungsten-containing precursor may undergo thermal or plasma-assisted decomposition.
According to various implementations, hydrogen may or may not be run in the background. Further, in some implementations, deposition of a tungsten nucleation layer may be followed by one or more treatment operations prior to tungsten bulk deposition. Treating a deposited tungsten nucleation layer to lower resistivity may include pulses of reducing agent and/or tungsten precursor.
Bulk deposition may also involve an ALD process in which a tungsten precursor and a reducing agent are sequentially injected into and purged from a reaction chamber. Hydrogen may be used as the reducing agent rather than a stronger reducing agent like diborane that is used in nucleation layer deposition.
Tungsten bulk deposition can also occur by a CVD process in which a reducing agent and a tungsten-containing precursor are flowed into a deposition chamber to deposit a bulk fill layer in the feature. An inert carrier gas may be used to deliver one or more of the reactant streams, which may or may not be pre-mixed. Unlike ALD processes, this operation generally involves flowing the reactants continuously until the desired amount is deposited. In certain implementations, the CVD operation may take place in multiple stages, with multiple periods of continuous and simultaneous flow of reactants separated by periods of one or more reactant flows diverted.
It should be understood that the tungsten films described herein may include some amount of other compounds, dopants and/or impurities such as nitrogen, carbon, oxygen, boron, phosphorous, sulfur, silicon, germanium and the like, depending on the particular precursors and processes used. The tungsten content in the film may range from 20% to 100% (atomic) tungsten. In many implementations, the films are tungsten-rich, having at least 50% (atomic) tungsten, or even at least about 60%, 75%, 90%, or 99% (atomic) tungsten.
In some embodiments, operation 202 in
In some embodiments, a W nucleation layer is deposited using one or more of a boron-containing reducing agent (e.g., B2H6) or a silicon-containing reducing agent (e.g., SiH4) as a co-reactant. For example, one or more S/W cycles, where S/W refers to a pulse of silane followed by a pulse of a W-containing precursor, may be employed to deposit a W nucleation layer on which a bulk W layer is deposited. In another example, one or more B/W cycles, where B/W refers to a pulse of diborane followed by a pulse of a W-containing precursor, may be employed to deposit a W nucleation layer on which a bulk W layer is deposited. B/W and S/W cycles may both be used to deposit a W nucleation layer, e.g., x(B/W)+y(S/W), with x and y being integers. Examples of B- and S-containing reducing agents are given below. For deposition of a W nucleation layers, in some embodiments, the W-containing precursor may be a non-oxygen containing precursor, e.g., WF6 or WCl5. Oxygen in oxygen-containing precursors may react with a silicon- or boron-containing reducing agent to form WSixOy or WBxOy, which are impure, high resistivity films. Oxygen-containing precursors may be used with oxygen incorporation minimized. In some embodiments, H2 may be used as a reducing gas instead of a boron-containing or silicon-containing reducing gas. Example thicknesses for deposition of a W nucleation layer range from 5 Å to 30 Å. Films at the lower end of this range may not be continuous; however, as long as they can help initiate continuous bulk W growth, the thickness may be sufficient. In some embodiments, the reducing agent pulses may be done at lower substrate temperatures than the W precursor pulses. For example, or B2H6 or a SiH4 (or other boron- or silicon-containing reducing agent) pulse may be performed at a temperature below 300° C., with the W pulse at temperatures greater than 300ºC.
While the description below focuses on tungsten feature fill, aspects of the disclosure may also be implemented in filling features with other materials. For example, the treatment sequence described in
Any suitable chamber may be used to implement the disclosed embodiments. Example deposition apparatuses include various systems, e.g., ALTUS® and ALTUS® Max, available from Lam Research Corp., of Fremont, California, or any of a variety of other commercially available processing systems.
In some embodiments, a first deposition may be performed at a first station that is one of two, five, or even more deposition stations positioned within a single deposition chamber. Thus, for example, hydrogen (H2) and tungsten hexafluoride (WF6) may be introduced in alternating pulses to the surface of the semiconductor substrate, at the first station, using an individual gas supply system that creates a localized atmosphere at the substrate surface. Another station may be used for NF3 treatment, and a third and/or fourth for subsequent ALD bulk fill.
Stations may include a heated pedestal or substrate support, one or more gas inlets or showerhead or dispersion plate.
Returning to
In various embodiments, a system controller 1029 is employed to control process conditions during deposition. The controller 1029 will typically include one or more memory devices and one or more processors. A processor may include a CPU or computer, analog and/or digital input/output connections, stepper motor controller boards, etc.
The controller 1029 may control all of the activities of the deposition apparatus. The system controller 1029 executes system control software, including sets of instructions for controlling the timing, mixture of gases, chamber pressure, chamber temperature, wafer temperature, radio frequency (RF) power levels, wafer chuck or pedestal position, and other parameters of a particular process. Other computer programs stored on memory devices associated with the controller 1029 may be employed in some embodiments.
Typically there will be a user interface associated with the controller 1029. The user interface may include a display screen, graphical software displays of the apparatus and/or process conditions, and user input devices such as pointing devices, keyboards, touch screens, microphones, etc.
System control logic may be configured in any suitable way. In general, the logic can be designed or configured in hardware and/or software. The instructions for controlling the drive circuitry may be hard coded or provided as software. The instructions may be provided by “programming.” Such programming is understood to include logic of any form, including hard coded logic in digital signal processors, application-specific integrated circuits, and other devices which have specific algorithms implemented as hardware. Programming is also understood to include software or firmware instructions that may be executed on a general-purpose processor. System control software may be coded in any suitable computer readable programming language.
The computer program code for controlling the germanium-containing reducing agent pulses, hydrogen flow, and tungsten-containing precursor pulses, and other processes in a process sequence can be written in any conventional computer readable programming language: for example, assembly language, C, C++, Pascal, Fortran, or others. Compiled object code or script is executed by the processor to perform the tasks identified in the program. Also as indicated, the program code may be hard coded.
The controller parameters relate to process conditions, such as, for example, process gas composition and flow rates, temperature, pressure, cooling gas pressure, substrate temperature, and chamber wall temperature. These parameters are provided to the user in the form of a recipe and may be entered utilizing the user interface.
Signals for monitoring the process may be provided by analog and/or digital input connections of the system controller 1029. The signals for controlling the process are output on the analog and digital output connections of the deposition apparatus 1000.
The system software may be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control operation of the chamber components necessary to carry out the deposition processes in accordance with the disclosed embodiments. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, pressure control code, and heater control code.
In some implementations, a controller 1029 is part of a system, which may be part of the above-described examples. Such systems can include semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and/or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller 1029, depending on the processing requirements and/or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings in some systems, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks connected to or interfaced with a specific system.
Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.
The controller 1029, in some implementations, may be a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller 1029 may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g. a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus as described above, the controller may be distributed, such as by including one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.
Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a CVD chamber or module, an ALD chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and/or manufacturing of semiconductor wafers.
As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and/or load ports in a semiconductor manufacturing factory.
The controller 1029 may include various programs. A substrate positioning program may include program code for controlling chamber components that are used to load the substrate onto a pedestal or chuck and to control the spacing between the substrate and other parts of the chamber such as a gas inlet and/or target. A process gas control program may include code for controlling gas composition, flow rates, pulse times, and optionally for flowing gas into the chamber prior to deposition in order to stabilize the pressure in the chamber. A pressure control program may include code for controlling the pressure in the chamber by regulating, e.g., a throttle valve in the exhaust system of the chamber. A heater control program may include code for controlling the current to a heating unit that is used to heat the substrate. Alternatively, the heater control program may control delivery of a heat transfer gas such as helium to the wafer chuck.
Examples of chamber sensors that may be monitored during deposition include mass flow controllers, pressure sensors such as manometers, and thermocouples located in the pedestal or chuck Appropriately programmed feedback and control algorithms may be used with data from these sensors to maintain desired process conditions.
The foregoing describes implementation of disclosed embodiments in a single or multi-chamber semiconductor processing tool. The apparatus and process described herein may be used in conjunction with lithographic patterning tools or processes, for example, for the fabrication or manufacture of semiconductor devices, displays, LEDs, photovoltaic panels, and the like. Typically, though not necessarily, such tools/processes will be used or conducted together in a common fabrication facility. Lithographic patterning of a film typically includes some or all of the following steps, each step provided with a number of possible tools: (1) application of photoresist on a workpiece, i.e., substrate, using a spin-on or spray-on tool; (2) curing of photoresist using a hot plate or furnace or UV curing tool; (3) exposing the photoresist to visible or UV or x-ray light with a tool such as a wafer stepper; (4) developing the resist so as to selectively remove resist and thereby pattern it using a tool such as a wet bench; (5) transferring the resist pattern into an underlying film or workpiece by using a dry or plasma-assisted etching tool; and (6) removing the resist using a tool such as an RF or microwave plasma resist stripper.
Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways of implementing the processes, systems, and apparatus of the present embodiments. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the embodiments are not to be limited to the details given herein.
A PCT Request Form is filed concurrently with this specification as part of the present application. Each application that the present application claim benefit of or priority to as identified in the concurrently filed PCT Request Form is incorporated by reference herein in its entirety and for all purposes.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/US2022/030053 | 5/19/2022 | WO |
| Number | Date | Country | |
|---|---|---|---|
| 63191714 | May 2021 | US |
