LIANG-WEN WU

Person

TAOYUAN, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Acoustical attenuator in storage array to improve performance
- Patent number 10,468,010
- Issue date Nov 5, 2019
- Quanta Computer Inc.
- Chao-Jung Chen
- F16 - ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINT...
Information Patent Grant
Light emitting diode chip
- Patent number 7,763,902
- Issue date Jul 27, 2010
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride based light emitting diode light emitting layer str...
- Patent number 7,692,181
- Issue date Apr 6, 2010
- Formosa Epitaxy Incorporation
- Cheng-Tsang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode chip
- Patent number 7,589,350
- Issue date Sep 15, 2009
- Formosa Epitaxy Incorporation
- Ming-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode structure with transparent window covering lay...
- Patent number 7,473,939
- Issue date Jan 6, 2009
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-brightness gallium-nitride based light emitting diode structure
- Patent number 7,442,962
- Issue date Oct 28, 2008
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-brightness gallium-nitride based light emitting diode structure
- Patent number 7,345,321
- Issue date Mar 18, 2008
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride based ultraviolet photo detector
- Patent number 7,307,291
- Issue date Dec 11, 2007
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Gallium-nitride based light-emitting diode structure with high reve...
- Patent number 7,180,096
- Issue date Feb 20, 2007
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-brightness gallium-nitride based light emitting diode structure
- Patent number 7,180,097
- Issue date Feb 20, 2007
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode structure having photonic crystals
- Patent number 7,173,289
- Issue date Feb 6, 2007
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of GaN light-emitting diode
- Patent number 7,148,519
- Issue date Dec 12, 2006
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN LED structure with p-type contacting layer grown at low-tempera...
- Patent number 7,105,850
- Issue date Sep 12, 2006
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode structure
- Patent number 7,087,922
- Issue date Aug 8, 2006
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride based light emitting diode structure with enhanced...
- Patent number 7,087,924
- Issue date Aug 8, 2006
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-brightness gallium-nitride based light emitting diode structure
- Patent number 7,049,638
- Issue date May 23, 2006
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride based multi-quantum well light-emitting diode n-typ...
- Patent number 7,042,019
- Issue date May 9, 2006
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of GaN light-emitting diode
- Patent number 7,042,018
- Issue date May 9, 2006
- Formosa Epitaxy Incorporation
- Ru-Chin Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride based light-emitting diode epitaxial structure
- Patent number 6,979,835
- Issue date Dec 27, 2005
- Formosa Epitaxy Incorporation
- Cheng-Tsang Yu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ACOUSTICAL ATTENUATOR IN STORAGE ARRAY TO IMPROVE PERFORMANCE
- Publication number 20180330712
- Publication date Nov 15, 2018
- QUANTA COMPUTER INC.
- Chao-Jung CHEN
- G10 - MUSICAL INSTRUMENTS ACOUSTICS
Information Patent Application
LIGHT-EMITTING DIODE COMPRISING STACKED-TYPE SCATTERING LAYER AND M...
- Publication number 20130248875
- Publication date Sep 26, 2013
- FORMOSA EPITAXY INCORPORATION
- WEN-YU LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING DIODE COMPRISING DIELECTRIC MATERIAL LAYER AND MANUF...
- Publication number 20130248901
- Publication date Sep 26, 2013
- FORMOSA EPITAXY INCORPORATION
- WEN-YU LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE STRUCTURE
- Publication number 20080079013
- Publication date Apr 3, 2008
- FORMOSA EPITAXY INCORPORATION
- Yun-Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium-Nitride Based Light-Emitting Diode Structure With High Reve...
- Publication number 20070267636
- Publication date Nov 22, 2007
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride based MQW light emitting diode having carrier supply layer
- Publication number 20070187697
- Publication date Aug 16, 2007
- Liang-Wen Wu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Light-emitting diode structure with transparent window covering lay...
- Publication number 20070158667
- Publication date Jul 12, 2007
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride based semiconductor device having multiple layer buffer str...
- Publication number 20070090384
- Publication date Apr 26, 2007
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE CHIP
- Publication number 20070090390
- Publication date Apr 26, 2007
- FORMOSA EPITAXY INCORPORATION
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE
- Publication number 20070090372
- Publication date Apr 26, 2007
- FORMOSA EPITAXY INCORPORATION
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING DIODE CHIP
- Publication number 20070080352
- Publication date Apr 12, 2007
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE ELEMENT AND DRIVING METHOD THEREOF
- Publication number 20070069223
- Publication date Mar 29, 2007
- Ming-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING DIODE CHIP
- Publication number 20070069218
- Publication date Mar 29, 2007
- Ming-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE AND METHOD OF FABRICATING THEREOF
- Publication number 20060273333
- Publication date Dec 7, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium-Nitride Based Light Emitting Diode Light Emitting Layer Str...
- Publication number 20060249727
- Publication date Nov 9, 2006
- Cheng-Tsang Yu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Gallium-nitride based ultraviolet photo detector
- Publication number 20060163681
- Publication date Jul 27, 2006
- Liang-Wen Wu
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
High-brightness gallium-nitride based light emitting diode structure
- Publication number 20060145179
- Publication date Jul 6, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-brightness gallium-nitride based light emitting diode structure
- Publication number 20060102921
- Publication date May 18, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-brightness gallium-nitride based light emitting diode structure
- Publication number 20060102930
- Publication date May 18, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting diode structure
- Publication number 20060102909
- Publication date May 18, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure of GaN light-emitting diode
- Publication number 20060097273
- Publication date May 11, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-BRIGHTNESS GALLIUM-NITRIDE BASED LIGHT EMITTING DIODE STRUCTURE
- Publication number 20060086942
- Publication date Apr 27, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM-NITRIDE BASED MULTI-QUANTUM WELL LIGHT-EMITTING DIODE N-TYP...
- Publication number 20060081861
- Publication date Apr 20, 2006
- Liang-Wen Wu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Gallium-nitride based semiconductor device buffer layer structure
- Publication number 20060076564
- Publication date Apr 13, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium-nitride based light-emitting diodes structure with high rev...
- Publication number 20060076574
- Publication date Apr 13, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF GAN LIGHT-EMITTING DIODE
- Publication number 20060060873
- Publication date Mar 23, 2006
- Ru-Chin Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium-nitride based light emitting diode light emitting layer str...
- Publication number 20060054897
- Publication date Mar 16, 2006
- Cheng-Tsang Yu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride epitaxial layer structure and method of manufacturing the same
- Publication number 20060049401
- Publication date Mar 9, 2006
- Tzu-Chi Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial structure and fabrication method of nitride semiconductor...
- Publication number 20060049418
- Publication date Mar 9, 2006
- Tzi-Chi Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium-nitride based light-emitting diode structure with high reve...
- Publication number 20060049424
- Publication date Mar 9, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS

LIANG-WEN WU

Person

Patents Grantslast 30 patents

Acoustical attenuator in storage array to improve performance

Light emitting diode chip

Gallium-nitride based light emitting diode light emitting layer str...

Light-emitting diode chip

Light-emitting diode structure with transparent window covering lay...

High-brightness gallium-nitride based light emitting diode structure

High-brightness gallium-nitride based light emitting diode structure

Gallium-nitride based ultraviolet photo detector

Gallium-nitride based light-emitting diode structure with high reve...

High-brightness gallium-nitride based light emitting diode structure

Light emitting diode structure having photonic crystals

Structure of GaN light-emitting diode

GaN LED structure with p-type contacting layer grown at low-tempera...

Light-emitting diode structure

Gallium-nitride based light emitting diode structure with enhanced...

High-brightness gallium-nitride based light emitting diode structure

Gallium-nitride based multi-quantum well light-emitting diode n-typ...

Structure of GaN light-emitting diode

Gallium-nitride based light-emitting diode epitaxial structure

Patents Applicationslast 30 patents

ACOUSTICAL ATTENUATOR IN STORAGE ARRAY TO IMPROVE PERFORMANCE

LIGHT-EMITTING DIODE COMPRISING STACKED-TYPE SCATTERING LAYER AND M...

LIGHT-EMITTING DIODE COMPRISING DIELECTRIC MATERIAL LAYER AND MANUF...

LIGHT EMITTING DIODE STRUCTURE

Gallium-Nitride Based Light-Emitting Diode Structure With High Reve...

Nitride based MQW light emitting diode having carrier supply layer

Light-emitting diode structure with transparent window covering lay...

Nitride based semiconductor device having multiple layer buffer str...

LIGHT EMITTING DIODE CHIP

LIGHT EMITTING DIODE

LIGHT-EMITTING DIODE CHIP

LIGHT EMITTING DIODE ELEMENT AND DRIVING METHOD THEREOF

LIGHT-EMITTING DIODE CHIP

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THEREOF

Gallium-Nitride Based Light Emitting Diode Light Emitting Layer Str...

Gallium-nitride based ultraviolet photo detector

High-brightness gallium-nitride based light emitting diode structure

High-brightness gallium-nitride based light emitting diode structure

High-brightness gallium-nitride based light emitting diode structure

Light-emitting diode structure

Structure of GaN light-emitting diode

HIGH-BRIGHTNESS GALLIUM-NITRIDE BASED LIGHT EMITTING DIODE STRUCTURE

GALLIUM-NITRIDE BASED MULTI-QUANTUM WELL LIGHT-EMITTING DIODE N-TYP...

Gallium-nitride based semiconductor device buffer layer structure

Gallium-nitride based light-emitting diodes structure with high rev...

STRUCTURE OF GAN LIGHT-EMITTING DIODE

Gallium-nitride based light emitting diode light emitting layer str...

Nitride epitaxial layer structure and method of manufacturing the same

Epitaxial structure and fabrication method of nitride semiconductor...

Gallium-nitride based light-emitting diode structure with high reve...