Ling Ma

Person

Redondo Beach, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Isolation structure for separating different transistor regions on...
- Patent number 12,199,102
- Issue date Jan 14, 2025
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a multi-chip assembly
- Patent number 12,191,296
- Issue date Jan 7, 2025
- Infineon Technologies AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device and method of manufacturing the same
- Patent number 12,119,400
- Issue date Oct 15, 2024
- Infineon Technologies Austria AG
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field plate anchoring structure for trench-based semiconductor devices
- Patent number 11,908,928
- Issue date Feb 20, 2024
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction device with oxygen inserted Si-layers
- Patent number 11,545,545
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device and method of manufacturing the same
- Patent number 11,538,932
- Issue date Dec 27, 2022
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having needle-shape field plate trenches and n...
- Patent number 11,342,425
- Issue date May 24, 2022
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device and method of manufacturing the same
- Patent number 11,316,043
- Issue date Apr 26, 2022
- Infineon Technologies Austria AG
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench field electrode termination structure for transistor devices
- Patent number 11,217,690
- Issue date Jan 4, 2022
- Infineon Technologies Austria AG
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled resistance integrated snubber for power switching device
- Patent number 11,217,577
- Issue date Jan 4, 2022
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined gate trench and contact etch process and related structure
- Patent number 10,840,327
- Issue date Nov 17, 2020
- Infineon Technologies Americas Corp.
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with superjunction and oxygen inserted Si-layers
- Patent number 10,790,353
- Issue date Sep 29, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled resistance integrated snubber for power switching device
- Patent number 10,593,664
- Issue date Mar 17, 2020
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined gate trench and contact etch process and related structure
- Patent number 10,403,712
- Issue date Sep 3, 2019
- Infineon Technologies Americas Corp.
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined gate and source trench formation and related structure
- Patent number 10,141,415
- Issue date Nov 27, 2018
- Infineon Technologies Americas Corp.
- Adam Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench FET with ruggedness enhancement regions
- Patent number 9,991,377
- Issue date Jun 5, 2018
- Infineon Technologies Americas Corp.
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure having integrated snubb...
- Patent number 9,966,464
- Issue date May 8, 2018
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a trench FET having a merged gate dielectric
- Patent number 9,853,142
- Issue date Dec 26, 2017
- Infineon Technologies Americas Corp.
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with contiguous gate trenches and offset...
- Patent number 9,818,743
- Issue date Nov 14, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried bus and related method
- Patent number 9,812,538
- Issue date Nov 7, 2017
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a shallow and narrow trench FET and related...
- Patent number 9,653,597
- Issue date May 16, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having integrated snubber resistance
- Patent number 9,627,328
- Issue date Apr 18, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with source trench and termination trenc...
- Patent number 9,620,583
- Issue date Apr 11, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench FET having merged gate dielectric
- Patent number 9,391,191
- Issue date Jul 12, 2016
- Infineon Technologies Americas Corp.
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buck converter power package
- Patent number 8,860,194
- Issue date Oct 14, 2014
- International Rectifier Corporation
- Ling Ma
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device including a voltage controlled termination str...
- Patent number 8,698,232
- Issue date Apr 15, 2014
- International Rectifier Corporation
- Aram Arzumanyan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with buried source electrode
- Patent number 8,564,051
- Issue date Oct 22, 2013
- International Rectifier Corporation
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET and method for fabricating same
- Patent number 8,536,645
- Issue date Sep 17, 2013
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flip chip semiconductor device and process of its manufacture
- Patent number 8,154,105
- Issue date Apr 10, 2012
- International Rectifier Corporation
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination trench structure for mosgated device and process for it...
- Patent number 8,017,494
- Issue date Sep 13, 2011
- International Rectifier Corporation
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHIELDING LAYER AND A METHOD OF FABRI...
- Publication number 20240194745
- Publication date Jun 13, 2024
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING COUNTER-DOPED REGIONS IN BOTH AN...
- Publication number 20240047517
- Publication date Feb 8, 2024
- Infineon Technologies Austria AG
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR SEPARATING DIFFERENT TRANSISTOR REGIONS ON...
- Publication number 20230335560
- Publication date Oct 19, 2023
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATE ANCHORING STRUCTURE FOR TRENCH-BASED SEMICONDUCTOR DEVICES
- Publication number 20230163210
- Publication date May 25, 2023
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHIP ASSEMBLY AND METHODS OF PRODUCING MULTI-CHIP ASSEMBLIES
- Publication number 20230145931
- Publication date May 11, 2023
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD FOR PRODUCING A TRANSISTOR DEVICE
- Publication number 20230101553
- Publication date Mar 30, 2023
- Weichun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor Device and Method of Manufacturing the Same
- Publication number 20220231163
- Publication date Jul 21, 2022
- Infineon Technologies Austria AG
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD ELECTRODE TERMINATION STRUCTURE FOR TRENCH-BASED TRANSISTOR D...
- Publication number 20220109068
- Publication date Apr 7, 2022
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NEEDLE-SHAPE FIELD PLATE TRENCHES AND N...
- Publication number 20220093753
- Publication date Mar 24, 2022
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Field Electrode Termination Structure for Transistor Devices
- Publication number 20210083096
- Publication date Mar 18, 2021
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction Device with Oxygen Inserted Si-Layers
- Publication number 20200350401
- Publication date Nov 5, 2020
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor Device and Method of Manufacturing the Same
- Publication number 20200335621
- Publication date Oct 22, 2020
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor Device and Method of Manufacturing the Same
- Publication number 20200203525
- Publication date Jun 25, 2020
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled Resistance Integrated Snubber for Power Switching Device
- Publication number 20200185377
- Publication date Jun 11, 2020
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Superjunction and Oxygen Inserted Si-Layers
- Publication number 20200152733
- Publication date May 14, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Combined Gate Trench and Contact Etch Process and Related Structure
- Publication number 20190355807
- Publication date Nov 21, 2019
- Infineon Technologies Americas Corp.
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled Resistance Integrated Snubber for Power Switching Device
- Publication number 20180182750
- Publication date Jun 28, 2018
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Combined Gate Trench and Contact Etch Process and Related Structure
- Publication number 20170352723
- Publication date Dec 7, 2017
- Infineon Technologies Americas Corp.
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Shallow and Narrow Trench FET
- Publication number 20170213909
- Publication date Jul 27, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Combined Gate and Source Trench Formation and Related Structure
- Publication number 20170200799
- Publication date Jul 13, 2017
- Infineon Technologies Americas Corp.
- Adam Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Structure Having Integrated Snubb...
- Publication number 20170186861
- Publication date Jun 29, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Bus and Related Method
- Publication number 20170154970
- Publication date Jun 1, 2017
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Trench FET Having a Merged Gate Dielectric
- Publication number 20160293754
- Publication date Oct 6, 2016
- Infineon Technologies Americas Corp.
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power FET Having Reduced Gate Resistance
- Publication number 20160172295
- Publication date Jun 16, 2016
- Infineon Technologies Americas Corp.
- Alex Lollio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Integrated Snubber Resistance and Re...
- Publication number 20160104773
- Publication date Apr 14, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Source Trench and Termination Trenc...
- Publication number 20160104766
- Publication date Apr 14, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Low RDSON and High Breakdown Voltage
- Publication number 20150325685
- Publication date Nov 12, 2015
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Contiguous Gate Trenches and Offset...
- Publication number 20140374825
- Publication date Dec 25, 2014
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Fet Having Merged Gate Dielectric
- Publication number 20140167153
- Publication date Jun 19, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Gate Charge Trench Field-Effect Transistor
- Publication number 20140167152
- Publication date Jun 19, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Isolation structure for separating different transistor regions on...

Method of producing a multi-chip assembly

Semiconductor transistor device and method of manufacturing the same

Field plate anchoring structure for trench-based semiconductor devices

Superjunction device with oxygen inserted Si-layers

Semiconductor transistor device and method of manufacturing the same

Semiconductor device having needle-shape field plate trenches and n...

Semiconductor transistor device and method of manufacturing the same

Trench field electrode termination structure for transistor devices

Controlled resistance integrated snubber for power switching device

Combined gate trench and contact etch process and related structure

Semiconductor device with superjunction and oxygen inserted Si-layers

Controlled resistance integrated snubber for power switching device

Combined gate trench and contact etch process and related structure

Combined gate and source trench formation and related structure

Trench FET with ruggedness enhancement regions

Method of forming a semiconductor structure having integrated snubb...

Method of manufacturing a trench FET having a merged gate dielectric

Power semiconductor device with contiguous gate trenches and offset...

Buried bus and related method

Method for fabricating a shallow and narrow trench FET and related...

Semiconductor structure having integrated snubber resistance

Power semiconductor device with source trench and termination trenc...

Trench FET having merged gate dielectric

Buck converter power package

Semiconductor device including a voltage controlled termination str...

Power semiconductor device with buried source electrode

Trench MOSFET and method for fabricating same

Flip chip semiconductor device and process of its manufacture

Termination trench structure for mosgated device and process for it...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING A SHIELDING LAYER AND A METHOD OF FABRI...

POWER SEMICONDUCTOR DEVICE HAVING COUNTER-DOPED REGIONS IN BOTH AN...

ISOLATION STRUCTURE FOR SEPARATING DIFFERENT TRANSISTOR REGIONS ON...

FIELD PLATE ANCHORING STRUCTURE FOR TRENCH-BASED SEMICONDUCTOR DEVICES

MULTI-CHIP ASSEMBLY AND METHODS OF PRODUCING MULTI-CHIP ASSEMBLIES

TRANSISTOR DEVICE AND METHOD FOR PRODUCING A TRANSISTOR DEVICE

Semiconductor Transistor Device and Method of Manufacturing the Same

FIELD ELECTRODE TERMINATION STRUCTURE FOR TRENCH-BASED TRANSISTOR D...

SEMICONDUCTOR DEVICE HAVING NEEDLE-SHAPE FIELD PLATE TRENCHES AND N...

Trench Field Electrode Termination Structure for Transistor Devices

Superjunction Device with Oxygen Inserted Si-Layers

Semiconductor Transistor Device and Method of Manufacturing the Same

Semiconductor Transistor Device and Method of Manufacturing the Same

Controlled Resistance Integrated Snubber for Power Switching Device

Semiconductor Device with Superjunction and Oxygen Inserted Si-Layers

Combined Gate Trench and Contact Etch Process and Related Structure

Controlled Resistance Integrated Snubber for Power Switching Device

Combined Gate Trench and Contact Etch Process and Related Structure

Method for Fabricating a Shallow and Narrow Trench FET

Combined Gate and Source Trench Formation and Related Structure

Method of Forming a Semiconductor Structure Having Integrated Snubb...

Buried Bus and Related Method

Method of Manufacturing a Trench FET Having a Merged Gate Dielectric

Power FET Having Reduced Gate Resistance

Semiconductor Structure Having Integrated Snubber Resistance and Re...

Power Semiconductor Device with Source Trench and Termination Trenc...

Power Semiconductor Device with Low RDSON and High Breakdown Voltage

Power Semiconductor Device with Contiguous Gate Trenches and Offset...

Trench Fet Having Merged Gate Dielectric

Reduced Gate Charge Trench Field-Effect Transistor