Mahender Kumar

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor with recessed cross couple for gate contact over active...
- Patent number 10,770,388
- Issue date Sep 8, 2020
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit products with gate structures positioned above e...
- Patent number 10,566,328
- Issue date Feb 18, 2020
- GLOBALFOUNDRIES Inc.
- Bala Haran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming vertical field effect transistors with self-alig...
- Patent number 10,461,186
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to control fin tip placement
- Patent number 9,812,324
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- Lei Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage and well implantation method for semiconductor de...
- Patent number 9,780,002
- Issue date Oct 3, 2017
- GLOBALFOUNDRIES Inc.
- Xintuo Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-protected electrostatic discharge field effect transistor (SPE...
- Patent number 8,610,217
- Issue date Dec 17, 2013
- International Business Machines Corporation
- Robert J. Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pedestal guard ring having continuous M1 metal barrier connected to...
- Patent number 8,188,574
- Issue date May 29, 2012
- International Business Machines Corporation
- Matthew S. Angyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures, fabrication methods, design structures for strained fin...
- Patent number 8,053,838
- Issue date Nov 8, 2011
- International Business Machines Corporation
- Xiaomeng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EDRAM including metal plates
- Patent number 7,943,474
- Issue date May 17, 2011
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin SOI vertical bipolar transistors with an inversion colle...
- Patent number 7,911,024
- Issue date Mar 22, 2011
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming high performance gates and structures thereof
- Patent number 7,790,553
- Issue date Sep 7, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for forming multiple self-aligned gate stacks...
- Patent number 7,790,541
- Issue date Sep 7, 2010
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin SOI vertical bipolar transistors with an inversion colle...
- Patent number 7,763,518
- Issue date Jul 27, 2010
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar transistor with a majority carrier accumulation la...
- Patent number 7,691,716
- Issue date Apr 6, 2010
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate finFETs with single or dual high-K gate dielectric
- Patent number 7,659,157
- Issue date Feb 9, 2010
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing device with ultra thin SOI a...
- Patent number 7,528,027
- Issue date May 5, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect device including inverted V shaped channel region and...
- Patent number 7,485,510
- Issue date Feb 3, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a vertical bipolar transistor with a majority...
- Patent number 7,485,537
- Issue date Feb 3, 2009
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI formation in semiconductor device including SOI and bulk silico...
- Patent number 7,394,131
- Issue date Jul 1, 2008
- International Business Machines Corporation
- Michael D. Steigerwalt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin SOI vertical bipolar transistors with an inversion colle...
- Patent number 7,375,410
- Issue date May 20, 2008
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate MOSFET by full semiconductor metal alloy conversion
- Patent number 7,151,023
- Issue date Dec 19, 2006
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI formation in semiconductor device including SOI and bulk silico...
- Patent number 7,118,986
- Issue date Oct 10, 2006
- International Business Machines Corporation
- Michael D. Steigerwalt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar transistor with a majority carrier accumulation la...
- Patent number 7,115,965
- Issue date Oct 3, 2006
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for deep trench etching through a buried insulator layer
- Patent number 6,995,094
- Issue date Feb 7, 2006
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR WITH RECESSED CROSS COUPLE FOR GATE CONTACT OVER ACTIVE...
- Publication number 20190385946
- Publication date Dec 19, 2019
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE STRUCTURES ABOVE ELEVATED ISOLATION STRUCTURES
- Publication number 20190267371
- Publication date Aug 29, 2019
- GLOBALFOUNDRIES INC.
- Bala Haran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ISOLATION
- Publication number 20190139830
- Publication date May 9, 2019
- GLOBALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-PROTECTED ELECTROSTATIC DISCHARGE FIELD EFFECT TRANSISTOR (SPE...
- Publication number 20120146150
- Publication date Jun 14, 2012
- International Business Machines Corporation
- Robert J. Gauthier, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...
- Publication number 20100207683
- Publication date Aug 19, 2010
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEDESTAL GUARD RING HAVING CONTINUOUS M1 METAL BARRIER CONNECTED TO...
- Publication number 20100200958
- Publication date Aug 12, 2010
- International Business Machines Corporation
- Matthew S. Angyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING HIGH PERFORMANCE GATES AND STRUCTURES THEREOF
- Publication number 20100006926
- Publication date Jan 14, 2010
- International Business Machines Corporation
- HUILONG ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES, FABRICATION METHODS, DESIGN STRUCTURES FOR STRAINED FIN...
- Publication number 20090321828
- Publication date Dec 31, 2009
- International Business Machines Corporation
- Xiaomeng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICES FROM BULK SEMICONDUCTOR AND METHODS FOR MANUFACTURIN...
- Publication number 20090256207
- Publication date Oct 15, 2009
- International Business Machines Corporation
- Xiaomeng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FORMING MULTIPLE SELF-ALIGNED GATE STACKS...
- Publication number 20090140347
- Publication date Jun 4, 2009
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATE FINFETS WITH SINGLE OR DUAL HIGH-K GATE DIELECTRIC
- Publication number 20090078997
- Publication date Mar 26, 2009
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FORMING IN TWO PORTIONS AND CONTACT SO FORMED
- Publication number 20090072400
- Publication date Mar 19, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL BIPOLAR TRANSISTOR WITH A MAJORITY CARRIER ACCUMULATION LA...
- Publication number 20080261371
- Publication date Oct 23, 2008
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...
- Publication number 20080230869
- Publication date Sep 25, 2008
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE ENHANCEMENT ON BOTH NMOSFET AND PMOSFET USING SELF-ALIG...
- Publication number 20080169510
- Publication date Jul 17, 2008
- International Business Machines Corporation
- Mahender Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...
- Publication number 20080132025
- Publication date Jun 5, 2008
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT DEVICE INCLUDING INVERTED V SHAPED CHANNEL REGION AND...
- Publication number 20080079037
- Publication date Apr 3, 2008
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE MOSFET BY FULL SEMICONDUCTOR METAL ALLOY CONVERSION
- Publication number 20070034967
- Publication date Feb 15, 2007
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical bipolar transistor with a majority carrier accumulation la...
- Publication number 20060263993
- Publication date Nov 23, 2006
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI FORMATION IN SEMICONDUCTOR DEVICE INCLUDING SOI AND BULK SILICO...
- Publication number 20060244093
- Publication date Nov 2, 2006
- Michael D. Steigerwalt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical bipolar transistor with a majority carrier accumulation la...
- Publication number 20060043530
- Publication date Mar 2, 2006
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI FORMATION IN SEMICONDUCTOR DEVICE INCLUDING SOI AND BULK SILICO...
- Publication number 20050282392
- Publication date Dec 22, 2005
- International Business Machines Corporation
- Michael D. Steigerwalt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-thin SOI vertical bipolar transistors with an inversion colle...
- Publication number 20050184360
- Publication date Aug 25, 2005
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEEP TRENCH ETCHING THROUGH A BURIED INSULATOR LAYER
- Publication number 20050079724
- Publication date Apr 14, 2005
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS

Mahender Kumar

Person

Patents Grantslast 30 patents

Transistor with recessed cross couple for gate contact over active...

Integrated circuit products with gate structures positioned above e...

Methods of forming vertical field effect transistors with self-alig...

Methods to control fin tip placement

Threshold voltage and well implantation method for semiconductor de...

Self-protected electrostatic discharge field effect transistor (SPE...

Pedestal guard ring having continuous M1 metal barrier connected to...

Structures, fabrication methods, design structures for strained fin...

EDRAM including metal plates

Ultra-thin SOI vertical bipolar transistors with an inversion colle...

Methods for forming high performance gates and structures thereof

Method and structure for forming multiple self-aligned gate stacks...

Ultra-thin SOI vertical bipolar transistors with an inversion colle...

Vertical bipolar transistor with a majority carrier accumulation la...

Dual metal gate finFETs with single or dual high-K gate dielectric

Structure and method for manufacturing device with ultra thin SOI a...

Field effect device including inverted V shaped channel region and...

Method of fabricating a vertical bipolar transistor with a majority...

STI formation in semiconductor device including SOI and bulk silico...

Ultra-thin SOI vertical bipolar transistors with an inversion colle...

Metal gate MOSFET by full semiconductor metal alloy conversion

STI formation in semiconductor device including SOI and bulk silico...

Vertical bipolar transistor with a majority carrier accumulation la...

Method for deep trench etching through a buried insulator layer

Patents Applicationslast 30 patents

TRANSISTOR WITH RECESSED CROSS COUPLE FOR GATE CONTACT OVER ACTIVE...

METHODS OF FORMING GATE STRUCTURES ABOVE ELEVATED ISOLATION STRUCTURES

SELF-ALIGNED GATE ISOLATION

SELF-PROTECTED ELECTROSTATIC DISCHARGE FIELD EFFECT TRANSISTOR (SPE...

ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...

PEDESTAL GUARD RING HAVING CONTINUOUS M1 METAL BARRIER CONNECTED TO...

METHODS FOR FORMING HIGH PERFORMANCE GATES AND STRUCTURES THEREOF

STRUCTURES, FABRICATION METHODS, DESIGN STRUCTURES FOR STRAINED FIN...

FINFET DEVICES FROM BULK SEMICONDUCTOR AND METHODS FOR MANUFACTURIN...

METHOD AND STRUCTURE FOR FORMING MULTIPLE SELF-ALIGNED GATE STACKS...

DUAL METAL GATE FINFETS WITH SINGLE OR DUAL HIGH-K GATE DIELECTRIC

CONTACT FORMING IN TWO PORTIONS AND CONTACT SO FORMED

VERTICAL BIPOLAR TRANSISTOR WITH A MAJORITY CARRIER ACCUMULATION LA...

ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...

PERFORMANCE ENHANCEMENT ON BOTH NMOSFET AND PMOSFET USING SELF-ALIG...

ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...

FIELD EFFECT DEVICE INCLUDING INVERTED V SHAPED CHANNEL REGION AND...

METAL GATE MOSFET BY FULL SEMICONDUCTOR METAL ALLOY CONVERSION

Vertical bipolar transistor with a majority carrier accumulation la...

STI FORMATION IN SEMICONDUCTOR DEVICE INCLUDING SOI AND BULK SILICO...

Vertical bipolar transistor with a majority carrier accumulation la...

STI FORMATION IN SEMICONDUCTOR DEVICE INCLUDING SOI AND BULK SILICO...

Ultra-thin SOI vertical bipolar transistors with an inversion colle...

METHOD FOR DEEP TRENCH ETCHING THROUGH A BURIED INSULATOR LAYER