Makoto Sasaki

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 10,741,683
- Issue date Aug 11, 2020
- Sumitomo Electric Industries, Ltd
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide ingot and method for manufacturing silicon carbide...
- Patent number 10,427,324
- Issue date Oct 1, 2019
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 9,947,782
- Issue date Apr 17, 2018
- Sumitomo Electric Industries, Ltd
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide crystal and method of manufacturing silicon carbide...
- Patent number 9,725,823
- Issue date Aug 8, 2017
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate, silicon carbide ingot, and methods for m...
- Patent number 9,605,358
- Issue date Mar 28, 2017
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ingot, silicon carbide substrate, and method for producing ingot
- Patent number 9,546,437
- Issue date Jan 17, 2017
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate, silicon carbide ingot, and methods for m...
- Patent number 9,422,639
- Issue date Aug 23, 2016
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing single crystal
- Patent number 9,090,992
- Issue date Jul 28, 2015
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide single crystal, and silico...
- Patent number 9,082,621
- Issue date Jul 14, 2015
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate and method of manufacturing silicon carbi...
- Patent number 9,070,567
- Issue date Jun 30, 2015
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide substrate and method for m...
- Patent number 8,969,103
- Issue date Mar 3, 2015
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide substrate, epitaxial wafer and manufacturing method...
- Patent number 8,709,950
- Issue date Apr 29, 2014
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide crystal ingot, silicon carbide crystal wafer, and m...
- Patent number 8,642,154
- Issue date Feb 4, 2014
- Sumitomo Electric Insustries, Ltd.
- Tsutomu Hori
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Single crystal silicon carbide substrate and method of manufacturin...
- Patent number 8,642,153
- Issue date Feb 4, 2014
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Light-emitting device
- Patent number 8,629,457
- Issue date Jan 14, 2014
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide crystal and method of manufacturing silicon carbide...
- Patent number 8,574,529
- Issue date Nov 5, 2013
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Substrate composed of silicon carbide with thin film, semiconductor...
- Patent number 8,436,366
- Issue date May 7, 2013
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- B24 - GRINDING POLISHING
Information Patent Grant
Method for manufacturing silicon carbide substrate
- Patent number 8,435,866
- Issue date May 7, 2013
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing semiconductor substrate
- Patent number 8,168,515
- Issue date May 1, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate, epitaxial wafer and manufacturing method...
- Patent number 8,154,027
- Issue date Apr 10, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate
- Patent number D655256
- Issue date Mar 6, 2012
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- D13 - Equipment for production, distribution, or transformation of energy
Information Patent Grant
Semiconductor substrate
- Patent number D651992
- Issue date Jan 10, 2012
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- D13 - Equipment for production, distribution, or transformation of energy
Information Patent Grant
Semiconductor substrate
- Patent number D651991
- Issue date Jan 10, 2012
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- D13 - Equipment for production, distribution, or transformation of energy

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE...
- Publication number 20230369411
- Publication date Nov 16, 2023
- Sumitomo Electric Industries, Ltd.
- Takashi SAKURADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20180204942
- Publication date Jul 19, 2018
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE INGOT, SILICON CARBIDE SEED...
- Publication number 20170191183
- Publication date Jul 6, 2017
- Sumitomo Electric Industries, Ltd.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHODS FOR M...
- Publication number 20160326669
- Publication date Nov 10, 2016
- Sumitomo Electric Industries, Ltd.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE...
- Publication number 20160289863
- Publication date Oct 6, 2016
- Sumitomo Electric Industries, Ltd.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MAN...
- Publication number 20160273129
- Publication date Sep 22, 2016
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE INGOT AND METHOD FOR MANUFACTURING SILICON CARBIDE...
- Publication number 20160236375
- Publication date Aug 18, 2016
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURIN...
- Publication number 20160138186
- Publication date May 19, 2016
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHODS FOR M...
- Publication number 20150255279
- Publication date Sep 10, 2015
- Sumitomo Electric Industries, Ltd.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20140299048
- Publication date Oct 9, 2014
- SUMITOMO ELECTRIC INDUSTRIES LTD.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
INGOT, SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING INGOT
- Publication number 20140295171
- Publication date Oct 2, 2014
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
INGOT, SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING INGOT
- Publication number 20140287226
- Publication date Sep 25, 2014
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20140138709
- Publication date May 22, 2014
- Sumitomo Electric Industries, Ltd.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE...
- Publication number 20140004303
- Publication date Jan 2, 2014
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL
- Publication number 20130327265
- Publication date Dec 12, 2013
- Sumitomo Electric Industries, Ltd.
- Hiroki INOUE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20130255568
- Publication date Oct 3, 2013
- Sumitomo Electric Industries, Ltd.
- Hiroki INOUE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SINGLE-CRYSTAL
- Publication number 20130239881
- Publication date Sep 19, 2013
- Sumitomo Electric Industries, Ltd.
- Hiroki INOUE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND METHOD FOR M...
- Publication number 20130109110
- Publication date May 2, 2013
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBI...
- Publication number 20130099252
- Publication date Apr 25, 2013
- Sumitomo Electric Industries, Ltd.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MAN...
- Publication number 20130095285
- Publication date Apr 18, 2013
- Sumitomo Electric Industries, Ltd.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF...
- Publication number 20130095294
- Publication date Apr 18, 2013
- Sumitomo Electric Industries, Ltd.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL
- Publication number 20130068157
- Publication date Mar 21, 2013
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20130009171
- Publication date Jan 10, 2013
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURIN...
- Publication number 20120315427
- Publication date Dec 13, 2012
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND M...
- Publication number 20120308758
- Publication date Dec 6, 2012
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHODS FOR M...
- Publication number 20120294790
- Publication date Nov 22, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SILICON CARBIDE POWDER
- Publication number 20120295112
- Publication date Nov 22, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE HAVING SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE
- Publication number 20120273800
- Publication date Nov 1, 2012
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING COMBINED SUBSTRATE HAVING SILICON CARBIDE...
- Publication number 20120276715
- Publication date Nov 1, 2012
- Sumitomo Electric Industries Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL, AND SILICO...
- Publication number 20120275984
- Publication date Nov 1, 2012
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH

Makoto Sasaki

Person

Patents Grantslast 30 patents

Semiconductor device and method for manufacturing same

Silicon carbide ingot and method for manufacturing silicon carbide...

Semiconductor device and method for manufacturing same

Silicon carbide crystal and method of manufacturing silicon carbide...

Silicon carbide substrate, silicon carbide ingot, and methods for m...

Ingot, silicon carbide substrate, and method for producing ingot

Silicon carbide substrate, silicon carbide ingot, and methods for m...

Method of manufacturing single crystal

Method for manufacturing silicon carbide single crystal, and silico...

Silicon carbide substrate and method of manufacturing silicon carbi...

Method for manufacturing silicon carbide substrate and method for m...

Silicon carbide substrate, epitaxial wafer and manufacturing method...

Silicon carbide crystal ingot, silicon carbide crystal wafer, and m...

Single crystal silicon carbide substrate and method of manufacturin...

Light-emitting device

Silicon carbide crystal and method of manufacturing silicon carbide...

Substrate composed of silicon carbide with thin film, semiconductor...

Method for manufacturing silicon carbide substrate

Method for manufacturing semiconductor substrate

Silicon carbide substrate, epitaxial wafer and manufacturing method...

Semiconductor substrate

Semiconductor substrate

Semiconductor substrate

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD OF MANUFACTURING SILICON CARBIDE INGOT, SILICON CARBIDE SEED...

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHODS FOR M...

SILICON CARBIDE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE...

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MAN...

SILICON CARBIDE INGOT AND METHOD FOR MANUFACTURING SILICON CARBIDE...

SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURIN...

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHODS FOR M...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

INGOT, SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING INGOT

INGOT, SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING INGOT

SILICON CARBIDE SUBSTRATE

SILICON CARBIDE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE...

METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SINGLE-CRYSTAL

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND METHOD FOR M...

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBI...

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MAN...

SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF...

METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURIN...

SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND M...

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHODS FOR M...

SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SILICON CARBIDE POWDER

COMPOSITE SUBSTRATE HAVING SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING COMBINED SUBSTRATE HAVING SILICON CARBIDE...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL, AND SILICO...