MAKOTO YOSHIMI

Person

TOKYO-TO, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device including a pair of MOS transistors for...
- Patent number 6,545,323
- Issue date Apr 8, 2003
- Kabushiki Kaisha Toshiba
- Yukihito Oowaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Lateral bipolar transistor formed on an insulating layer
- Patent number 6,376,897
- Issue date Apr 23, 2002
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor memory device
- Patent number 6,342,408
- Issue date Jan 29, 2002
- Kabushiki Kaisha Toshiba
- Yukihito Oowaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a lateral bipolar transistor
- Patent number 6,174,779
- Issue date Jan 16, 2001
- Kabushiki Kaisha Toshiba
- Tomoaki Shino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 6,130,461
- Issue date Oct 10, 2000
- Kabushiki Kaisha Toshiba
- Yukihito Oowaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 5,895,956
- Issue date Apr 20, 1999
- Kabushiki Kaisha Toshiba
- Yukihito Oowaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 5,886,385
- Issue date Mar 23, 1999
- Kabushiki Kaisha Toshiba
- Osamu Arisumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a projecting element region
- Patent number 5,844,278
- Issue date Dec 1, 1998
- Kabushiki Kaisha Toshiba
- Tomohisa Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 5,734,181
- Issue date Mar 31, 1998
- Kabushiki Kaisha Toshiba
- Ryuji Ohba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate transistor having narrow-bandgap-source
- Patent number 5,698,869
- Issue date Dec 16, 1997
- Kabushiki Kaisha Toshiba
- Makoto Yoshimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a single crystal semiconductor layer fo...
- Patent number 5,485,028
- Issue date Jan 16, 1996
- Kabushiki Kaisha Toshiba
- Minoru Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-speed semiconductor gain memory cell with minimal area occupancy
- Patent number 5,463,234
- Issue date Oct 31, 1995
- Kabushiki Kaisha Toshiba
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor devices
- Patent number 5,100,810
- Issue date Mar 31, 1992
- Kabushiki Kaisha Toshiba
- Makoto Yoshimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,097,311
- Issue date Mar 17, 1992
- Kabushiki Kaisha Toshiba
- Masao Iwase
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOI SUBSTRATE AND SEMICONDUCTOR DEVICE USING AN SOI SUBSTRATE
- Publication number 20100193900
- Publication date Aug 5, 2010
- NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
- Tadahiro Ohmi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device
- Publication number 20020056878
- Publication date May 16, 2002
- Yukihito Oowaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR FORMED ON AN INSULATING LAYER
- Publication number 20010054746
- Publication date Dec 27, 2001
- TAKASHI YAMADA
- H01 - BASIC ELECTRIC ELEMENTS

MAKOTO YOSHIMI

Person

Patents Grantslast 30 patents

Semiconductor memory device including a pair of MOS transistors for...

Lateral bipolar transistor formed on an insulating layer

Method of manufacturing semiconductor memory device

Method for manufacturing a lateral bipolar transistor

Semiconductor memory device

Semiconductor memory device

Semiconductor device and manufacturing method thereof

Semiconductor device having a projecting element region

Semiconductor device and manufacturing method therefor

Insulated-gate transistor having narrow-bandgap-source

Semiconductor device having a single crystal semiconductor layer fo...

High-speed semiconductor gain memory cell with minimal area occupancy

Manufacturing method of semiconductor devices

Semiconductor device

Patents Applicationslast 30 patents

SOI SUBSTRATE AND SEMICONDUCTOR DEVICE USING AN SOI SUBSTRATE

Semiconductor memory device

LATERAL BIPOLAR TRANSISTOR FORMED ON AN INSULATING LAYER