Man Gu

Person

Malta, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET with shorter fin height in drain region than source region a...
- Patent number 12,132,080
- Issue date Oct 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon implantation for thicker gate silicide
- Patent number 12,020,937
- Issue date Jun 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,843,034
- Issue date Dec 12, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including a stress liner
- Patent number 11,721,722
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure with fin having subfin extents with different lateral...
- Patent number 11,545,575
- Issue date Jan 3, 2023
- GLOBALFOUNDRIES U.S. INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including asymmetric, recessed source...
- Patent number 11,532,745
- Issue date Dec 20, 2022
- GLOBALFOUNDRIES U.S. INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS finFET structure with buried insulator layer and method for f...
- Patent number 11,410,998
- Issue date Aug 9, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with hybrid source/drain regions
- Patent number 11,374,002
- Issue date Jun 28, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passive devices over polycrystalline semiconductor fins
- Patent number 11,289,474
- Issue date Mar 29, 2022
- GLOBALFOUNDRIES U.S. INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with an asymmetrical source and drain
- Patent number 11,239,366
- Issue date Feb 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with shorter fin height in drain region than source region a...
- Patent number 11,211,453
- Issue date Dec 28, 2021
- GLOBALFOUNDRIES U.S. INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with diffusion blocking spacer sections
- Patent number 11,101,364
- Issue date Aug 24, 2021
- GLOBALFOUNDRIES U.S. INC.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures of a semiconductor device having a wide gate p...
- Patent number 10,971,625
- Issue date Apr 6, 2021
- GLOBALFOUNDRIES U.S. INC.
- Michael V Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming source/drain regions of a FinFET device and the...
- Patent number 10,964,598
- Issue date Mar 30, 2021
- GLOBALFOUNDRIES U.S. INC.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of epi source/drain material on transistor devices and th...
- Patent number 10,777,463
- Issue date Sep 15, 2020
- GLOBALFOUNDRIES Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer with laminate liner
- Patent number 10,755,918
- Issue date Aug 25, 2020
- GLOBALFOUNDRIES, INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with robust low-k sidewall spacers and method...
- Patent number 10,192,791
- Issue date Jan 29, 2019
- GLOBALFOUNDRIES Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminated spacers for field-effect transistors
- Patent number 10,008,456
- Issue date Jun 26, 2018
- GLOBALFOUNDRIES Inc.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD...
- Publication number 20240429237
- Publication date Dec 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton TOKRANOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATES OF SEMICONDUCTOR DEVICES HAVING VARYING THICKNESSES OF S...
- Publication number 20240063225
- Publication date Feb 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- DAVID PRITCHARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH HYBRID GATE DIELECTRIC STRUCTURE AND ASYM...
- Publication number 20240030343
- Publication date Jan 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Saloni Chaurasia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON IMPLANTATION FOR THICKER GATE SILICIDE
- Publication number 20230307238
- Publication date Sep 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH MULTIPLE SILICIDE LAYERS
- Publication number 20230261088
- Publication date Aug 17, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION HAVING THREE PORTIONS WITH DIFFERENT MATERIALS, AN...
- Publication number 20230238428
- Publication date Jul 27, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Rong-Ting Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH FACETED, RAISED SOURCE/DRAIN REGION
- Publication number 20230146952
- Publication date May 11, 2023
- GLOBALFOUNDRIES U.S. Inc.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20230062747
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING A STRESS LINER
- Publication number 20230063900
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH SHORTER FIN HEIGHT IN DRAIN REGION THAN SOURCE REGION A...
- Publication number 20220052158
- Publication date Feb 17, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH HYBRID SOURCE/DRAIN REGIONS
- Publication number 20220028854
- Publication date Jan 27, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE WITH FIN HAVING SUBFIN EXTENTS WITH DIFFERENT LATERAL...
- Publication number 20220005954
- Publication date Jan 6, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL GATE STRUCTURE FOR AN LDMOS TRANSISTOR DEVICE
- Publication number 20210351293
- Publication date Nov 11, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passive devices over polycrystalline semiconductor fins
- Publication number 20210327872
- Publication date Oct 21, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE INCLUDING ASYMMETRIC, RECESSED SOURCE...
- Publication number 20210273094
- Publication date Sep 2, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS FINFET STRUCTURE WITH BURIED INSULATOR LAYER AND METHOD FOR F...
- Publication number 20210265342
- Publication date Aug 26, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ASYMMETRICALLY-POSITIONED SOURCE/DRAIN REGIONS
- Publication number 20210249307
- Publication date Aug 12, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH AN ASYMMETRICAL SOURCE AND DRAIN
- Publication number 20210242339
- Publication date Aug 5, 2021
- GLOBALFOUNDRIES U.S, Inc.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SOURCE/DRAIN REGIONS OF A FINFET DEVICE AND THE...
- Publication number 20210020515
- Publication date Jan 21, 2021
- GLOBALFOUNDRIES INC.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURES OF A SEMICONDUCTOR DEVICE HAVING A WIDE GATE P...
- Publication number 20200411689
- Publication date Dec 31, 2020
- GLOBALFOUNDRIES INC.
- MICHAEL V. AQUILINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH DIFFUSION BLOCKING SPACER SECTIONS
- Publication number 20200287019
- Publication date Sep 10, 2020
- GLOBALFOUNDRIES INC.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF EPI SOURCE/DRAIN MATERIAL ON TRANSISTOR DEVICES AND TH...
- Publication number 20200227320
- Publication date Jul 16, 2020
- GLOBALFOUNDRIES INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER WITH LAMINATE LINER
- Publication number 20200161122
- Publication date May 21, 2020
- GLOBALFOUNDRIES INC.
- Man GU
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

FinFET with shorter fin height in drain region than source region a...

Carbon implantation for thicker gate silicide

Lateral bipolar transistor

Bipolar junction transistors including a stress liner

IC structure with fin having subfin extents with different lateral...

Integrated circuit structure including asymmetric, recessed source...

LDMOS finFET structure with buried insulator layer and method for f...

Transistors with hybrid source/drain regions

Passive devices over polycrystalline semiconductor fins

Transistors with an asymmetrical source and drain

FinFET with shorter fin height in drain region than source region a...

Field-effect transistors with diffusion blocking spacer sections

Epitaxial structures of a semiconductor device having a wide gate p...

Methods of forming source/drain regions of a FinFET device and the...

Formation of epi source/drain material on transistor devices and th...

Spacer with laminate liner

Semiconductor devices with robust low-k sidewall spacers and method...

Laminated spacers for field-effect transistors

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD...

SUBSTRATES OF SEMICONDUCTOR DEVICES HAVING VARYING THICKNESSES OF S...

TRANSISTOR STRUCTURE WITH HYBRID GATE DIELECTRIC STRUCTURE AND ASYM...

CARBON IMPLANTATION FOR THICKER GATE SILICIDE

TRANSISTORS WITH MULTIPLE SILICIDE LAYERS

TRENCH ISOLATION HAVING THREE PORTIONS WITH DIFFERENT MATERIALS, AN...

TRANSISTOR WITH FACETED, RAISED SOURCE/DRAIN REGION

LATERAL BIPOLAR TRANSISTOR

BIPOLAR JUNCTION TRANSISTORS INCLUDING A STRESS LINER

FINFET WITH SHORTER FIN HEIGHT IN DRAIN REGION THAN SOURCE REGION A...

TRANSISTORS WITH HYBRID SOURCE/DRAIN REGIONS

IC STRUCTURE WITH FIN HAVING SUBFIN EXTENTS WITH DIFFERENT LATERAL...

NOVEL GATE STRUCTURE FOR AN LDMOS TRANSISTOR DEVICE

Passive devices over polycrystalline semiconductor fins

INTEGRATED CIRCUIT STRUCTURE INCLUDING ASYMMETRIC, RECESSED SOURCE...

LDMOS FINFET STRUCTURE WITH BURIED INSULATOR LAYER AND METHOD FOR F...

TRANSISTORS WITH ASYMMETRICALLY-POSITIONED SOURCE/DRAIN REGIONS

TRANSISTORS WITH AN ASYMMETRICAL SOURCE AND DRAIN

METHODS OF FORMING SOURCE/DRAIN REGIONS OF A FINFET DEVICE AND THE...

EPITAXIAL STRUCTURES OF A SEMICONDUCTOR DEVICE HAVING A WIDE GATE P...

FIELD-EFFECT TRANSISTORS WITH DIFFUSION BLOCKING SPACER SECTIONS

FORMATION OF EPI SOURCE/DRAIN MATERIAL ON TRANSISTOR DEVICES AND TH...

SPACER WITH LAMINATE LINER