MANDANA TADAYONI

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Split gate non-volatile memory cell having a floating gate, word li...
- Patent number 9,793,279
- Issue date Oct 17, 2017
- Silicon Storage Technology, Inc.
- Jeng-Wei Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making embedded memory device with silicon-on-insulator s...
- Patent number 9,634,020
- Issue date Apr 25, 2017
- Silicon Storage Technology, Inc.
- Chien Sheng Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a self-aligned stack gate structure for use in a...
- Patent number 9,570,581
- Issue date Feb 14, 2017
- Silicon Storage Technology, Inc.
- Willem-Jan Toren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making embedded memory device with silicon-on-insulator s...
- Patent number 9,431,407
- Issue date Aug 30, 2016
- Silicon Storage Technology, Inc.
- Chien-Sheng Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned stack gate structure for use in a non-volatile memory...
- Patent number 9,330,922
- Issue date May 3, 2016
- Silicon Storage Technology, Inc.
- Willem-Jan Toren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making split-gate memory cell with substrate stressor region
- Patent number 9,306,039
- Issue date Apr 5, 2016
- Silicon Storage Technology, Inc.
- Mandana Tadayoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating a split gate flash memory cell with coupling gate
- Patent number 9,245,638
- Issue date Jan 26, 2016
- Silicon Storage Technology, Inc.
- Nhan Do
- G11 - INFORMATION STORAGE
Information Patent Grant
Split-gate memory cell with substrate stressor region, and method o...
- Patent number 9,018,690
- Issue date Apr 28, 2015
- Silicon Storage Technology, Inc.
- Mandana Tadayoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a memory cell by reducing diffusion of dopants un...
- Patent number 8,785,307
- Issue date Jul 22, 2014
- Silicon Storage Technology, Inc.
- Xian Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating a split gate flash memory cell with coupling gate
- Patent number 8,711,636
- Issue date Apr 29, 2014
- Silicon Storage Technology, Inc.
- Nhan Do
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Method Of Making Embedded Memory Device With Silicon-On-Insulator S...
- Publication number 20170103989
- Publication date Apr 13, 2017
- Silicon Storage Technology, Inc.
- CHIEN SHENG SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Gate Non-volatile Memory Cell Having A Floating Gate, Word Li...
- Publication number 20170012049
- Publication date Jan 12, 2017
- Silicon Storage Technology, Inc.
- Jeng-Wei Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Method of Forming A Self-Aligned Stack Gate Structure For Use In A...
- Publication number 20160225878
- Publication date Aug 4, 2016
- Silicon Storage Technology, Inc.
- Willem-Jan Toren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Making Embedded Memory Device With Silicon-On-Insulator S...
- Publication number 20160086962
- Publication date Mar 24, 2016
- Silicon Storage Technology, Inc.
- Chien-Sheng Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming Extended Source-Drain MOS Transistors
- Publication number 20150270372
- Publication date Sep 24, 2015
- Silicon Storage Technology, Inc.
- Chien-Sheng Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded Memory Device With Silicon-On-Insulator Substrate, And Met...
- Publication number 20150263040
- Publication date Sep 17, 2015
- Silicon Storage Technology, Inc.
- Chien-Sheng Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Making Split-Gate Memory Cell With Substrate Stressor Region
- Publication number 20150200278
- Publication date Jul 16, 2015
- Silicon Storage Technology, Inc.
- Mandana Tadayoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Making High-Voltage MOS Transistors With Thin Poly Gate
- Publication number 20140273387
- Publication date Sep 18, 2014
- Chien-Sheng Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Operating A Split Gate Flash Memory Cell With Coupling Gate
- Publication number 20140198578
- Publication date Jul 17, 2014
- Silicon Storage Technology, Inc.
- Nhan Do
- G11 - INFORMATION STORAGE
Information Patent Application
Split-Gate Memory Cell With Substrate Stressor Region, And Method O...
- Publication number 20140091382
- Publication date Apr 3, 2014
- Silicon Storage Technology, Inc.
- Mandana Tadayoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Extended Source-Drain MOS Transistors And Method Of Formation
- Publication number 20140084367
- Publication date Mar 27, 2014
- Silicon Storage Technology, Inc.
- Chien-Sheng Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming A Memory Cell By Reducing Diffusion Of Dopants Un...
- Publication number 20140057422
- Publication date Feb 27, 2014
- Silicon Storage Technology, Inc.
- XIAN LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Stack Gate Structure For Use In A Non-volatile Memory...
- Publication number 20130234223
- Publication date Sep 12, 2013
- Willem-Jan Toren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Operating A Split Gate Flash Memory Cell With Coupling Gate
- Publication number 20130121085
- Publication date May 16, 2013
- Nhan Do
- G11 - INFORMATION STORAGE

MANDANA TADAYONI

Person

Patents Grantslast 30 patents

Split gate non-volatile memory cell having a floating gate, word li...

Method of making embedded memory device with silicon-on-insulator s...

Method of forming a self-aligned stack gate structure for use in a...

Method of making embedded memory device with silicon-on-insulator s...

Self-aligned stack gate structure for use in a non-volatile memory...

Method of making split-gate memory cell with substrate stressor region

Method of operating a split gate flash memory cell with coupling gate

Split-gate memory cell with substrate stressor region, and method o...

Method of forming a memory cell by reducing diffusion of dopants un...

Method of operating a split gate flash memory cell with coupling gate

Patents Applicationslast 30 patents

Method Of Making Embedded Memory Device With Silicon-On-Insulator S...

Split Gate Non-volatile Memory Cell Having A Floating Gate, Word Li...

Method of Forming A Self-Aligned Stack Gate Structure For Use In A...

Method Of Making Embedded Memory Device With Silicon-On-Insulator S...

Method Of Forming Extended Source-Drain MOS Transistors

Embedded Memory Device With Silicon-On-Insulator Substrate, And Met...

Method Of Making Split-Gate Memory Cell With Substrate Stressor Region

Method Of Making High-Voltage MOS Transistors With Thin Poly Gate

Method Of Operating A Split Gate Flash Memory Cell With Coupling Gate

Split-Gate Memory Cell With Substrate Stressor Region, And Method O...

Extended Source-Drain MOS Transistors And Method Of Formation

Method Of Forming A Memory Cell By Reducing Diffusion Of Dopants Un...

Self-Aligned Stack Gate Structure For Use In A Non-volatile Memory...

Method Of Operating A Split Gate Flash Memory Cell With Coupling Gate