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Martin Jeffrey Binns
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St. Charles, MO, US
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Patents Grants
last 30 patents
Information
Patent Grant
Fabrication of indium-doped silicon by the czochralski method
Patent number
10,060,045
Issue date
Aug 28, 2018
Corner Star Limited
Roberto Scala
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for controlling of thermal donor formation in high resistivi...
Patent number
7,135,351
Issue date
Nov 14, 2006
MEMC Electronic Materials, Inc.
Martin J. Binns
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Control of oxygen precipitate formation in high resistivity CZ silicon
Patent number
6,897,084
Issue date
May 24, 2005
MEMC Electronic Materials, Inc.
Martin Jeffrey Binns
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Thermal annealing process for producing low defect density single c...
Patent number
6,743,289
Issue date
Jun 1, 2004
MEMC Electronic Materials, Inc.
Robert J. Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for producing thermally annealed wafers having improved int...
Patent number
6,686,260
Issue date
Feb 3, 2004
MEMC Electronics Materials, Inc.
Robert J. Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Thermally annealed, low defect density single crystal silicon
Patent number
6,416,836
Issue date
Jul 9, 2002
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Thermally annealed wafers having improved internal gettering
Patent number
6,361,619
Issue date
Mar 26, 2002
MEMC Electronic Materials, Inc.
Robert J. Falster
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
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Patent Application
FABRICATION OF INDIUM-DOPED SILICON BY THE CZOCHRALSKI METHOD
Publication number
20160215413
Publication date
Jul 28, 2016
MEMC ELECTRONIC MATERIALS SPA
Roberto Scala
C30 - CRYSTAL GROWTH
Information
Patent Application
INDIUM-DOPED SILICON WAFER AND SOLAR CELL USING THE SAME
Publication number
20150333193
Publication date
Nov 19, 2015
MEMC ELECTRONIC MATRIALS S.P.A.
Jesse Samsonov Appel
C30 - CRYSTAL GROWTH
Information
Patent Application
Control of thermal donor formation in high resistivity CZ silicon
Publication number
20050158969
Publication date
Jul 21, 2005
MEMC Electronic Materials, Inc.
Martin Jeffrey Binns
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Process for controlling denuded zone depth in an ideal oxygen preci...
Publication number
20030192469
Publication date
Oct 16, 2003
MEMC Electronic Materials, Inc.
Jeffrey L. Libbert
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Control of thermal donor formation in high resistivity CZ silicon
Publication number
20030054641
Publication date
Mar 20, 2003
MEMC Electronic Materials, Inc.
Martin Jeffrey Binns
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Process for producing thermally annealed wafers having improved int...
Publication number
20020170631
Publication date
Nov 21, 2002
MEMC Electronic Materials, Inc.
Robert J. Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Thermal annealing process for producing low defect density single c...
Publication number
20020083889
Publication date
Jul 4, 2002
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH