MASAHIDE INUISHI

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TOKYO, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a retrograde well structure and method...
- Patent number 6,420,763
- Issue date Jul 16, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Tomohiro Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,852,327
- Issue date Dec 22, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including silicon oxide film and nitrided o...
- Patent number 5,648,284
- Issue date Jul 15, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Kusunoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including silicon oxide film and nitrided o...
- Patent number 5,554,876
- Issue date Sep 10, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Kusunoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with double structur...
- Patent number 5,536,665
- Issue date Jul 16, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with double structured well
- Patent number 5,446,305
- Issue date Aug 29, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including silicon oxide film and nitrided o...
- Patent number 5,369,297
- Issue date Nov 29, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Kusunoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making DRAM cell having improved radiation protection
- Patent number 5,268,321
- Issue date Dec 7, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Masahiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a MOS type field effect transistor using an...
- Patent number 5,258,319
- Issue date Nov 2, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Masahide Inuishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor memory device having stacked...
- Patent number 5,258,321
- Issue date Nov 2, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Masahiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an MIS device having lightly doped drain st...
- Patent number 5,217,913
- Issue date Jun 8, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Kiyoto Watabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having trench capacitor
- Patent number 5,200,353
- Issue date Apr 6, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Masahide Inuishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static semiconductor memory with polysilicon source drain transistors
- Patent number 5,200,918
- Issue date Apr 6, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Tomohisa Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing LDDFET having double sidewall spacers
- Patent number 5,183,771
- Issue date Feb 2, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Katsuyoshi Mitsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static type semiconductor memory device and method of manufacturing...
- Patent number 5,166,763
- Issue date Nov 24, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Tomohisa Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS device having lightly doped drain structure
- Patent number 5,146,291
- Issue date Sep 8, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Kiyoto Watabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS semiconductor device
- Patent number 5,089,865
- Issue date Feb 18, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Katsuyoshi Mitsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS type field effect transistor having LDD structure
- Patent number 5,061,975
- Issue date Oct 29, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Masahide Inuishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 5,023,682
- Issue date Jun 11, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Masahiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for isolating semiconductor components on an integrated c...
- Patent number 4,942,448
- Issue date Jul 17, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Katsuhiro Tsukamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having trench capacitor and manufacturing meth...
- Patent number 4,918,500
- Issue date Apr 17, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Masahide Inuishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor memory device
- Patent number 4,702,797
- Issue date Oct 27, 1987
- Mitsubishi Denki Kabushiki Kaisha
- Hiroki Shimano
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING A RETROGRADE WELL STRUCTURE AND METHOD...
- Publication number 20020020888
- Publication date Feb 21, 2002
- TOMOHIRO YAMASHITA
- H01 - BASIC ELECTRIC ELEMENTS

MASAHIDE INUISHI

Person

Patents Grantslast 30 patents

Semiconductor device having a retrograde well structure and method...

Semiconductor device

Field effect transistor including silicon oxide film and nitrided o...

Field effect transistor including silicon oxide film and nitrided o...

Method of manufacturing a semiconductor device with double structur...

Semiconductor device with double structured well

Field effect transistor including silicon oxide film and nitrided o...

Method of making DRAM cell having improved radiation protection

Method of manufacturing a MOS type field effect transistor using an...

Manufacturing method for semiconductor memory device having stacked...

Method of manufacturing an MIS device having lightly doped drain st...

Method of manufacturing a semiconductor device having trench capacitor

Static semiconductor memory with polysilicon source drain transistors

Method of manufacturing LDDFET having double sidewall spacers

Static type semiconductor memory device and method of manufacturing...

MIS device having lightly doped drain structure

MIS semiconductor device

MOS type field effect transistor having LDD structure

Semiconductor memory device

Structure for isolating semiconductor components on an integrated c...

Semiconductor device having trench capacitor and manufacturing meth...

Method of manufacturing semiconductor memory device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING A RETROGRADE WELL STRUCTURE AND METHOD...