Masahiro HIKITA

Person

Toyama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated semiconductor device
- Patent number 12,074,093
- Issue date Aug 27, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Manabu Yanagihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method for manufacturing the same
- Patent number 11,171,228
- Issue date Nov 9, 2021
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hideyuki Okita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method for manufacturing same
- Patent number 11,152,499
- Issue date Oct 19, 2021
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hideyuki Okita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,090,220
- Issue date Oct 2, 2018
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Ayanori Ikoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method of manufacturing the same
- Patent number 9,859,413
- Issue date Jan 2, 2018
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hideyuki Okita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device composed of AlGaInN layers with inactive regions
- Patent number 9,761,670
- Issue date Sep 12, 2017
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Masahiro Hikita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method for manufacturing same
- Patent number 9,685,549
- Issue date Jun 20, 2017
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hideyuki Okita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a semiconductor layer stacked body
- Patent number 9,577,084
- Issue date Feb 21, 2017
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Masahiro Hikita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor device which can be used as a power...
- Patent number 9,412,858
- Issue date Aug 9, 2016
- PANASONIC INTELLECTUAL PEOPERTY MANAGEEMENT CO., LTD.
- Hideyuki Okita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 9,293,574
- Issue date Mar 22, 2016
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hideyuki Okita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 8,884,333
- Issue date Nov 11, 2014
- Panasonic Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor with nitride semiconductor and method for f...
- Patent number 8,779,438
- Issue date Jul 15, 2014
- Panasonic Corporation
- Masahiro Hikita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device having reduced interface leakage currents
- Patent number 8,748,941
- Issue date Jun 10, 2014
- Panasonic Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the device
- Patent number 8,723,229
- Issue date May 13, 2014
- Panasonic Corporation
- Masahiro Hikita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,598,628
- Issue date Dec 3, 2013
- Panasonic Corporation
- Masahiro Hikita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor
- Patent number 8,592,866
- Issue date Nov 26, 2013
- Panasonic Corporation
- Manabu Yanagihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 8,569,797
- Issue date Oct 29, 2013
- Panasonic Corporation
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor assembly and method for manufacturing the same
- Patent number 8,450,146
- Issue date May 28, 2013
- Panasonic Corporation
- Kenichiro Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 8,441,035
- Issue date May 14, 2013
- Panasonic Corporation
- Masahiro Hikita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for reducing and/or preventing current collapse
- Patent number 8,390,029
- Issue date Mar 5, 2013
- Panasonic Corporation
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method for fabricating the same
- Patent number 8,344,423
- Issue date Jan 1, 2013
- Panasonic Corporation
- Yasuhiro Uemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor
- Patent number 8,264,002
- Issue date Sep 11, 2012
- Panasonic Corporation
- Masahiro Hikita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 8,164,115
- Issue date Apr 24, 2012
- Panasonic Corporation
- Masahiro Hikita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 8,148,752
- Issue date Apr 3, 2012
- Panasonic Corporation
- Ayanori Ikoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method for fabricating the same
- Patent number 8,129,748
- Issue date Mar 6, 2012
- Panasonic Corporation
- Yasuhiro Uemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method for fabricating the same
- Patent number 8,101,972
- Issue date Jan 24, 2012
- Panasonic Corporation
- Masahiro Hikita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and method for operating the same
- Patent number 8,076,698
- Issue date Dec 13, 2011
- Panasonic Corporation
- Daisuke Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method for fabricating the same
- Patent number 7,898,002
- Issue date Mar 1, 2011
- Panasonic Corporation
- Masahiro Hikita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method for fabricating the same
- Patent number 7,863,649
- Issue date Jan 4, 2011
- Panasonic Corporation
- Masahiro Hikita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride based semiconductor device with concave gate region
- Patent number 7,838,904
- Issue date Nov 23, 2010
- Panasonic Corporation
- Kazushi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250006798
- Publication date Jan 2, 2025
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240304630
- Publication date Sep 12, 2024
- Panasonic Intellectual Property Management Co., Ltd.
- Hiroto YAMAGIWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20230411506
- Publication date Dec 21, 2023
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME
- Publication number 20230386978
- Publication date Nov 30, 2023
- Panasonic Intellectual Property Management Co., Ltd.
- Masayuki KURODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20230361179
- Publication date Nov 9, 2023
- Panasonic Intellectual Property Management Co., Ltd.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220392887
- Publication date Dec 8, 2022
- Panasonic Intellectual Property Management Co., Ltd.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SEMICONDUCTOR DEVICE
- Publication number 20220320091
- Publication date Oct 6, 2022
- Panasonic Intellectual Property Management Co., Ltd.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220302259
- Publication date Sep 22, 2022
- Panasonic Intellectual Property Management Co., Ltd.
- Hiroto YAMAGIWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20220254902
- Publication date Aug 11, 2022
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220190152
- Publication date Jun 16, 2022
- Panasonic Intellectual Property Management Co., Ltd.
- HIDEYUKI OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200119178
- Publication date Apr 16, 2020
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20200105917
- Publication date Apr 2, 2020
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180248027
- Publication date Aug 30, 2018
- Panasonic Intellectual Property Management Co., Ltd.
- HIDEYUKI OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170148701
- Publication date May 25, 2017
- Panasonic Intellectual Property Management Co., Ltd.
- Ayanori IKOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20170117403
- Publication date Apr 27, 2017
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160118489
- Publication date Apr 28, 2016
- Panasonic Intellectual Property Management Co., Ltd.
- MASAHIRO HIKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160118491
- Publication date Apr 28, 2016
- Panasonic Intellectual Property Management Co., Ltd.
- HIDEYUKI OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20140231873
- Publication date Aug 21, 2014
- PANASONIC CORPORATION
- Daisuke SHIBATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20140225161
- Publication date Aug 14, 2014
- PANASONIC CORPORATION
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140103360
- Publication date Apr 17, 2014
- PANASONIC CORPORATION
- Masahiro HIKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20140097468
- Publication date Apr 10, 2014
- PANASONIC CORPORATION
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20120299011
- Publication date Nov 29, 2012
- Masahiro Hikita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20120146093
- Publication date Jun 14, 2012
- PANASONIC CORPORATION
- Daisuke SHIBATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20120126290
- Publication date May 24, 2012
- PANASONIC CORPORATION
- Yasuhiro UEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120068227
- Publication date Mar 22, 2012
- Masahiro HIKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ASSEMBLY AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110297960
- Publication date Dec 8, 2011
- PANASONIC CORPORATION
- Kenichiro Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR
- Publication number 20110278540
- Publication date Nov 17, 2011
- PANASONIC CORPORATION
- Kenichiro Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110272740
- Publication date Nov 10, 2011
- PANASONIC CORPORATION
- Hidekazu UMEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE
- Publication number 20110266554
- Publication date Nov 3, 2011
- PANASONIC CORPORATION
- Masahiro HIKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110227093
- Publication date Sep 22, 2011
- PANASONIC CORPORATION
- Masahiro HIKITA
- H01 - BASIC ELECTRIC ELEMENTS

Masahiro HIKITA

Person

Patents Grantslast 30 patents

Integrated semiconductor device

Nitride semiconductor device and method for manufacturing the same

Nitride semiconductor device and method for manufacturing same

Semiconductor device

Nitride semiconductor device and method of manufacturing the same

Semiconductor device composed of AlGaInN layers with inactive regions

Nitride semiconductor device and method for manufacturing same

Semiconductor device having a semiconductor layer stacked body

Group III nitride semiconductor device which can be used as a power...

Semiconductor device and method of manufacturing semiconductor device

Nitride semiconductor device

Field-effect transistor with nitride semiconductor and method for f...

Nitride semiconductor device having reduced interface leakage currents

Semiconductor device and method of manufacturing the device

Semiconductor device

Transistor

Field effect transistor and method of manufacturing the same

Transistor assembly and method for manufacturing the same

Field effect transistor and method of manufacturing the same

Semiconductor device for reducing and/or preventing current collapse

Nitride semiconductor device and method for fabricating the same

Field-effect transistor

Nitride semiconductor device

Field effect transistor

Nitride semiconductor device and method for fabricating the same

Nitride semiconductor device and method for fabricating the same

Transistor and method for operating the same

Nitride semiconductor device and method for fabricating the same

Nitride semiconductor device and method for fabricating the same

Nitride based semiconductor device with concave gate region

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INTEGRATED SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

FIELD-EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME

NITRIDE SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE

TRANSISTOR ASSEMBLY AND METHOD FOR MANUFACTURING THE SAME

FIELD-EFFECT TRANSISTOR

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME