Masakazu Yamaguchi

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with super junction region
- Patent number RE47641
- Issue date Oct 8, 2019
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
Information Patent Grant
Power semiconductor device
- Patent number RE47198
- Issue date Jan 8, 2019
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
Information Patent Grant
Semiconductor device
- Patent number 8,319,314
- Issue date Nov 27, 2012
- Kabushiki Kaisha Toshiba
- Tsuneo Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with a plurality of gate electrodes
- Patent number 7,772,641
- Issue date Aug 10, 2010
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 7,518,197
- Issue date Apr 14, 2009
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,492,031
- Issue date Feb 17, 2009
- Kabushiki Kaisha Toshiba
- Koichi Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,456,487
- Issue date Nov 25, 2008
- Kabushiki Kaisha Toshiba
- Tsuneo Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 7,361,954
- Issue date Apr 22, 2008
- Kabushiki Kaisha Toshiba
- Koichi Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 7,319,257
- Issue date Jan 15, 2008
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,238,576
- Issue date Jul 3, 2007
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 7,170,106
- Issue date Jan 30, 2007
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 7,115,475
- Issue date Oct 3, 2006
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 7,078,740
- Issue date Jul 18, 2006
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,075,168
- Issue date Jul 11, 2006
- Kabushiki Kaisha Toshiba
- Koichi Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having vertical metal insulator semiconductor...
- Patent number 6,995,426
- Issue date Feb 7, 2006
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 6,936,893
- Issue date Aug 30, 2005
- Kabushiki Kaisha Toshiba
- Masahiro Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor element capable of improving short circuit with...
- Patent number 6,921,687
- Issue date Jul 26, 2005
- Kabushiki Kaisha Toshiba
- Hidetaka Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor element capable of improving short circuit with...
- Patent number 6,894,347
- Issue date May 17, 2005
- Kabushiki Kaisha Toshiba
- Hidetaka Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with super junction region
- Patent number 6,844,592
- Issue date Jan 18, 2005
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 6,809,349
- Issue date Oct 26, 2004
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having RESURF layer
- Patent number 6,693,338
- Issue date Feb 17, 2004
- Kabushiki Kaisha Toshiba
- Wataru Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor element capable of improving short circuit with...
- Patent number 6,670,658
- Issue date Dec 30, 2003
- Kabushiki Kaisha Toshiba
- Hidetaka Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor
- Patent number 6,545,341
- Issue date Apr 8, 2003
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor element capable of improving short circuit with...
- Patent number 6,495,871
- Issue date Dec 17, 2002
- Kabushiki Kaisha Toshiba
- Hidetaka Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate thyristor
- Patent number 6,236,069
- Issue date May 22, 2001
- Kabushiki Kaisha Toshiba
- Takashi Shinohe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,114,727
- Issue date Sep 5, 2000
- Kabushiki Kaisha Toshiba
- Tsuneo Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power supply circuit
- Patent number 6,111,454
- Issue date Aug 29, 2000
- Kabushiki Kaisha Toshiba
- Takashi Shinohe
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High voltage semiconductor power device
- Patent number 6,054,748
- Issue date Apr 25, 2000
- Kabushiki Kaisha Toshiba
- Masanori Tsukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Driving circuit for driving a semiconductor device at high speed an...
- Patent number 5,910,738
- Issue date Jun 8, 1999
- Kabushiki Kaisha Toshiba
- Takashi Shinohe
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Insulated-gate thyristor
- Patent number 5,793,065
- Issue date Aug 11, 1998
- Kabushiki Kaisha Toshiba
- Takashi Shinohe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20110101417
- Publication date May 5, 2011
- Kabushiki Kaisha Toshiba
- Tsuneo Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20090039386
- Publication date Feb 12, 2009
- Kabushiki Kaisha Toshiba
- Tsuneo Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080035992
- Publication date Feb 14, 2008
- Kabushiki Kaisha Toshiba
- Yusuke KAWAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND METH...
- Publication number 20070210350
- Publication date Sep 13, 2007
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20070114570
- Publication date May 24, 2007
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20070018242
- Publication date Jan 25, 2007
- KABUSHIKI KAISHA TOSHIBA
- Koichi SUGIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device
- Publication number 20060278925
- Publication date Dec 14, 2006
- KABUSHIKI KAISHA TOSHIBA
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device
- Publication number 20060237786
- Publication date Oct 26, 2006
- KABUSHIKI KAISHA TOSHIBA
- Hideaki Ninomiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060202308
- Publication date Sep 14, 2006
- Kabushiki Kaisha Toshiba
- Koichi Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having vertical metal insulator semiconductor...
- Publication number 20060145290
- Publication date Jul 6, 2006
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device
- Publication number 20060006409
- Publication date Jan 12, 2006
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050263852
- Publication date Dec 1, 2005
- Kabushiki Kaisha Toshiba
- Tsuneo Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050161768
- Publication date Jul 28, 2005
- Kabushiki Kaisha Toshiba
- Koichi Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing semiconductor device
- Publication number 20050098826
- Publication date May 12, 2005
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor element capable of improving short circuit with...
- Publication number 20050062064
- Publication date Mar 24, 2005
- Hidetaka Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device
- Publication number 20040238884
- Publication date Dec 2, 2004
- Masahiro Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device
- Publication number 20040207009
- Publication date Oct 21, 2004
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor element capable of improving short circuit with...
- Publication number 20040089886
- Publication date May 13, 2004
- Hidetaka Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20040084722
- Publication date May 6, 2004
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040043565
- Publication date Mar 4, 2004
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing semiconductor device
- Publication number 20030222327
- Publication date Dec 4, 2003
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having vertical metal insulator semiconductor...
- Publication number 20030122222
- Publication date Jul 3, 2003
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor element capable of improving short circuit with...
- Publication number 20030089966
- Publication date May 15, 2003
- Hidetaka Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device having RESURF layer
- Publication number 20020185705
- Publication date Dec 12, 2002
- Wataru Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device
- Publication number 20020038887
- Publication date Apr 4, 2002
- KABUSHIKI KAISHA TOSHIBA
- Hideaki Ninomiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power transistor
- Publication number 20010035565
- Publication date Nov 1, 2001
- KABUSHIKI KAISHA TOSHIBA
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor element capabale of improving short circuit wit...
- Publication number 20010026977
- Publication date Oct 4, 2001
- Hidetaka Hattori
- H01 - BASIC ELECTRIC ELEMENTS

Masakazu Yamaguchi

Person

Patents Grantslast 30 patents

Semiconductor device with super junction region

Power semiconductor device

Semiconductor device

Power semiconductor device with a plurality of gate electrodes

Power semiconductor device

Semiconductor device

Semiconductor device

Power semiconductor device

Power semiconductor device

Semiconductor device and method of manufacturing the same

Power semiconductor device

Method of manufacturing semiconductor device

Power semiconductor device

Semiconductor device

Semiconductor device having vertical metal insulator semiconductor...

Power semiconductor device

Power semiconductor element capable of improving short circuit with...

Power semiconductor element capable of improving short circuit with...

Semiconductor device with super junction region

Power semiconductor device

Power semiconductor device having RESURF layer

Power semiconductor element capable of improving short circuit with...

Power transistor

Power semiconductor element capable of improving short circuit with...

Insulated-gate thyristor

Semiconductor device

Power supply circuit

High voltage semiconductor power device

Driving circuit for driving a semiconductor device at high speed an...

Insulated-gate thyristor

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

Semiconductor Device

SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND METH...

POWER SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE

Power semiconductor device

Power semiconductor device

Semiconductor device

Semiconductor device having vertical metal insulator semiconductor...

Power semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device and method of manufacturing semiconductor device

Power semiconductor element capable of improving short circuit with...

Power semiconductor device

Power semiconductor device

Power semiconductor element capable of improving short circuit with...

POWER SEMICONDUCTOR DEVICE

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device having vertical metal insulator semiconductor...

Power semiconductor element capable of improving short circuit with...

Power semiconductor device having RESURF layer

Power semiconductor device

Power transistor

Power semiconductor element capabale of improving short circuit wit...