Masami Aoki

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Scanner performance comparison and matching using design and defect...
- Patent number 8,594,823
- Issue date Nov 26, 2013
- KLA-Tencor Corporation
- Allen Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus formed by SAC (self-aligned contact)
- Patent number 6,483,138
- Issue date Nov 19, 2002
- Kabushiki Kaisha Toshiba
- Mariko Habu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high integration density and improved per...
- Patent number 6,294,422
- Issue date Sep 25, 2001
- Kabushiki Kaisha Toshiba
- Kazumasa Sunouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus formed by SAC (self-aligned contact) method...
- Patent number 6,078,073
- Issue date Jun 20, 2000
- Kabushiki Kaisha Toshiba
- Mariko Habu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having trench-type capacitor structure...
- Patent number 6,043,528
- Issue date Mar 28, 2000
- Kabushiki Kaisha Toshiba
- Masami Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high integration density and improved per...
- Patent number 6,025,623
- Issue date Feb 15, 2000
- Kabushiki Kaisha Toshiba
- Kazumasa Sunouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a resist pattern
- Patent number 5,981,150
- Issue date Nov 9, 1999
- Kabushiki Kaisha Toshiba
- Masami Aoki
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of manufacturing a semiconductor device and semiconductor de...
- Patent number 5,923,073
- Issue date Jul 13, 1999
- Kabushiki Kaisha Toshiba
- Masami Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and manufacturing method thereof
- Patent number 5,804,851
- Issue date Sep 8, 1998
- Kabushiki Kaisha Toshiba
- Mitsuhiro Noguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask for exposure
- Patent number 5,783,336
- Issue date Jul 21, 1998
- Kabushiki Kaisha Toshiba
- Masami Aoki
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Dynamic semiconductor memory device with higher density bit line/wo...
- Patent number 5,747,844
- Issue date May 5, 1998
- Kabushiki Kaisha Toshiba
- Masami Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Random access memory device with trench-type one-transistor memory...
- Patent number 5,736,760
- Issue date Apr 7, 1998
- Kabushiki Kaisha Toshiba
- Katsuhiko Hieda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate transistor having narrow-bandgap-source
- Patent number 5,698,869
- Issue date Dec 16, 1997
- Kabushiki Kaisha Toshiba
- Makoto Yoshimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having cylindrical capacitors
- Patent number 5,629,539
- Issue date May 13, 1997
- Kabushiki Kaisha Toshiba
- Masami Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic semiconductor memory device with higher density bit line/wo...
- Patent number 5,578,847
- Issue date Nov 26, 1996
- Kabushiki Kaisha Toshiba
- Masami Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Random access memory device with trench-type one-transistor memory...
- Patent number 5,508,541
- Issue date Apr 16, 1996
- Kabushiki Kaisha Toshiba
- Katsuhiko Hieda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device isolated by a trench
- Patent number 5,384,280
- Issue date Jan 24, 1995
- Kabushiki Kaisha Toshiba
- Masami Aoki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Scanner Performance Comparison And Matching Using Design And Defect...
- Publication number 20110172804
- Publication date Jul 14, 2011
- KLA-Tencor Corporation
- Allen Park
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Semiconductor memory device and method of fabricating the same
- Publication number 20020096771
- Publication date Jul 25, 2002
- Kabushiki Kaisha Toshiba
- Yuki Yamada
- H01 - BASIC ELECTRIC ELEMENTS

Masami Aoki

Person

Patents Grantslast 30 patents

Scanner performance comparison and matching using design and defect...

Semiconductor apparatus formed by SAC (self-aligned contact)

Semiconductor device with high integration density and improved per...

Semiconductor apparatus formed by SAC (self-aligned contact) method...

Semiconductor memory device having trench-type capacitor structure...

Semiconductor device with high integration density and improved per...

Method for forming a resist pattern

Method of manufacturing a semiconductor device and semiconductor de...

Semiconductor memory device and manufacturing method thereof

Mask for exposure

Dynamic semiconductor memory device with higher density bit line/wo...

Random access memory device with trench-type one-transistor memory...

Insulated-gate transistor having narrow-bandgap-source

Semiconductor memory device having cylindrical capacitors

Dynamic semiconductor memory device with higher density bit line/wo...

Random access memory device with trench-type one-transistor memory...

Method of manufacturing a semiconductor device isolated by a trench

Patents Applicationslast 30 patents

Scanner Performance Comparison And Matching Using Design And Defect...

Semiconductor memory device and method of fabricating the same