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Masashi Ozeki
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Yokohama, JP
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last 30 patents
Information
Patent Grant
GaAs MIS device
Patent number
5,497,024
Issue date
Mar 5, 1996
Asahi Kogyosha Co., Ltd.
Akira Shibuya
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Hetero-epitaxially grown compound semiconductor substrate
Patent number
5,484,664
Issue date
Jan 16, 1996
Fujitsu Limited
Kuninori Kitahara
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Hetero-epitaxially grown compound semiconductor substrate and a met...
Patent number
5,300,186
Issue date
Apr 5, 1994
Fujitsu Limited
Kuninori Kitahara
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Compound semiconductor crystal growing method
Patent number
5,296,088
Issue date
Mar 22, 1994
Fujitsu Limited
Kunihiko Kodama
C30 - CRYSTAL GROWTH
Information
Patent Grant
Atomic layer epitaxy of compound semiconductor
Patent number
5,270,247
Issue date
Dec 14, 1993
Fujitsu Limited
Yoshiki Sakuma
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of growing compound semiconductor epitaxial layer by atomic...
Patent number
5,166,092
Issue date
Nov 24, 1992
Fujitsu Limited
Kouji Mochizuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Hetero-epitaxially grown compound semiconductor substrate and a met...
Patent number
5,130,269
Issue date
Jul 14, 1992
Fujitsu Limited
Kuninori Kitahara
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of growing group III-V compound semiconductor epitaxial layer
Patent number
4,861,417
Issue date
Aug 29, 1989
Fujitsu Limited
Kouji Mochizuki
C30 - CRYSTAL GROWTH