Applied Physics Letters; vol. 48, No. 16, 21 Apr. 1986, pp. 1083-1084, New York, USA; B. F. Levine et al.; "Long Wavelength GaSb Photoconductive Detectors Grown on Si Substrates". |
Journal of Vacuum Science and Technology; vol. 5, No. 4, Jul./Aug. 1987, pp. 1184-1186, New York, USA; M. Ozeki et al.; "Kinetic Processes in Atomic-Layer Epitaxy of GaAs and AlAs Using a Pulsed Vapor-Phase Method". |
Vernon et al., "Metalorganic Chemical Vapor Deposition of GaAs on Si . . . ", J. Crys. Growth, vol. 77, 1986, pp. 530-538. |
Mendez et al., ". . . InAs/AlAs Strained-Layer Superlattices . . . ", Appl. Phys., A48, 1989, pp. 471-473. |
Sugo et al., "Buffer Layer Effects on Residual Stress in InP on Si Substrates," Appl. Phys. Lett., 54(18), 1 May 1989, pp. 1754-1756. |
Shinohara, ". . . AlAs-GaAs Superlattice Buffer Layers," Appl. Phys. Lett., 52(7), 15 Feb. 1988, pp. 543-545. |