Matthew N. Rocklein

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices including ferroelectric materials
- Patent number 12,167,610
- Issue date Dec 10, 2024
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode formation
- Patent number 12,046,658
- Issue date Jul 23, 2024
- Micron Technology, Inc.
- An-Jen B. Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies comprising stud-type capacitors
- Patent number 11,417,661
- Issue date Aug 16, 2022
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped titanium nitride materials for DRAM capacitors, and related s...
- Patent number 11,289,487
- Issue date Mar 29, 2022
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a barrier material on an electrode
- Patent number 11,251,261
- Issue date Feb 15, 2022
- Micron Technology, Inc.
- Sanket S Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell
- Patent number 11,201,286
- Issue date Dec 14, 2021
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode/dielectric barrier material formation and structures
- Patent number 11,145,710
- Issue date Oct 12, 2021
- Micron Technology, Inc.
- Sanket S. Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tamper-resistant integrated circuits, and related methods
- Patent number 11,139,256
- Issue date Oct 5, 2021
- Micron Technology, Inc.
- Diana C. Majerus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including ferroelectric materials
- Patent number 11,043,502
- Issue date Jun 22, 2021
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxidative trim
- Patent number 10,985,239
- Issue date Apr 20, 2021
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of an atomic layer of germanium in an opening of a substr...
- Patent number 10,964,536
- Issue date Mar 30, 2021
- Micron Technology, Inc.
- Francois H. Fabreguette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage node shaping
- Patent number 10,811,419
- Issue date Oct 20, 2020
- Micron Technology, Inc.
- Devesh Dadhich Shreeram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies comprising stud-type capacitors
- Patent number 10,600,788
- Issue date Mar 24, 2020
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell
- Patent number 10,586,923
- Issue date Mar 10, 2020
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and apparatuses including asymmetric ferroelectric material...
- Patent number 10,438,643
- Issue date Oct 8, 2019
- Micron Technology, Inc.
- Steven C. Nicholes
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices including ferroelectric materials
- Patent number 10,403,630
- Issue date Sep 3, 2019
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and semiconductor devices including ferroelectric mate...
- Patent number 10,192,605
- Issue date Jan 29, 2019
- Micron Technology, Inc.
- Steven C. Nicholes
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated assemblies comprising stud-type capacitors
- Patent number 10,177,152
- Issue date Jan 8, 2019
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and semiconductor devices including ferroelectric mate...
- Patent number 10,147,474
- Issue date Dec 4, 2018
- Micron Technology, Inc.
- Steven C. Nicholes
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming a ferroelectric memory cell
- Patent number 10,062,703
- Issue date Aug 28, 2018
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of operating ferroelectric memory cells, and related ferroe...
- Patent number 9,899,072
- Issue date Feb 20, 2018
- Micron Technology, Inc.
- Steven C. Nicholes
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device structures including ferroelectric memory cells
- Patent number 9,698,343
- Issue date Jul 4, 2017
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of operating ferroelectric memory cells, and related ferroe...
- Patent number 9,697,881
- Issue date Jul 4, 2017
- Micron Technology, Inc.
- Steven C. Nicholes
- G11 - INFORMATION STORAGE
Information Patent Grant
Fortification of charge-storing material in high-K dielectric envir...
- Patent number 9,576,805
- Issue date Feb 21, 2017
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structures including molybdenum nitride, molybdenum o...
- Patent number 9,466,660
- Issue date Oct 11, 2016
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of operating ferroelectric memory cells, and related ferroe...
- Patent number 9,460,770
- Issue date Oct 4, 2016
- Micron Technology, Inc.
- Steven C. Nicholes
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming a ferroelectric memory cell
- Patent number 9,231,206
- Issue date Jan 5, 2016
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell
- Patent number 9,159,921
- Issue date Oct 13, 2015
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a zirconium oxide material
- Patent number 9,006,702
- Issue date Apr 14, 2015
- Micron Technology, Inc.
- Dale W. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fortification of charge storing material in high K dielectric envir...
- Patent number 8,987,806
- Issue date Mar 24, 2015
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
CAPACITORS WITH ELECTRODES HAVING A PORTION OF MATERIAL REMOVED, AN...
- Publication number 20220238532
- Publication date Jul 28, 2022
- Micron Technology, Inc.
- Devesh Dadhich Shreeram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED S...
- Publication number 20220208767
- Publication date Jun 30, 2022
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL
- Publication number 20220102630
- Publication date Mar 31, 2022
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE/DIELECTRIC BARRIER MATERIAL FORMATION AND STRUCTURES
- Publication number 20220028968
- Publication date Jan 27, 2022
- Micron Technology, Inc.
- Sanket S. Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS
- Publication number 20210313339
- Publication date Oct 7, 2021
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TAMPER-RESISTANT INTEGRATED CIRCUITS, AND RELATED METHODS
- Publication number 20210057357
- Publication date Feb 25, 2021
- Micron Technology, Inc.
- Diana C. Majerus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDATIVE TRIM
- Publication number 20210050409
- Publication date Feb 18, 2021
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE FORMATION
- Publication number 20210013318
- Publication date Jan 14, 2021
- Micron Technology, Inc.
- An-Jen B. Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A BARRIER MATERIAL ON AN ELECTRODE
- Publication number 20200365684
- Publication date Nov 19, 2020
- Micron Technology, Inc.
- Sanket S Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF AN ATOMIC LAYER OF GERMANIUM ON A SUBSTRATE MATERIAL
- Publication number 20200251334
- Publication date Aug 6, 2020
- Micron Technology, Inc.
- Francois H. Fabreguette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL
- Publication number 20200212299
- Publication date Jul 2, 2020
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Comprising Stud-Type Capacitors
- Publication number 20200203350
- Publication date Jun 25, 2020
- Micron Technology, Inc.
- GURTEJ S. SANDHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS
- Publication number 20190386015
- Publication date Dec 19, 2019
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED S...
- Publication number 20190267383
- Publication date Aug 29, 2019
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND APPARATUSES INCLUDING ASYMMETRIC FERROELECTRIC MATERIAL...
- Publication number 20190103151
- Publication date Apr 4, 2019
- Micron Technology, Inc.
- Steven C. Nicholes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Comprising Stud-Type Capacitors
- Publication number 20190027477
- Publication date Jan 24, 2019
- Micron Technology, Inc.
- GURTEJ S. SANDHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Comprising Stud-Type Capacitors
- Publication number 20190027478
- Publication date Jan 24, 2019
- Micron Technology, Inc.
- GURTEJ S. SANDHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS
- Publication number 20180350824
- Publication date Dec 6, 2018
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS AND SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATE...
- Publication number 20180137905
- Publication date May 17, 2018
- Micron Technology, Inc.
- Steven C. Nicholes
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY CELL
- Publication number 20170346007
- Publication date Nov 30, 2017
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF OPERATING FERROELECTRIC MEMORY CELLS, AND RELATED FERROE...
- Publication number 20170294219
- Publication date Oct 12, 2017
- Micron Technology, Inc.
- Steven C. Nicholes
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING A FERROELECTRIC MEMORY CELL
- Publication number 20170186757
- Publication date Jun 29, 2017
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF OPERATING FERROELECTRIC MEMORY CELLS, AND RELATED FERROE...
- Publication number 20170062037
- Publication date Mar 2, 2017
- Micron Technology, Inc.
- Steven C. Nicholes
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES INCLUDING FERROELECTRIC MEMORY CELLS
- Publication number 20160064655
- Publication date Mar 3, 2016
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL
- Publication number 20150380646
- Publication date Dec 31, 2015
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORTIFICATION OF CHARGE-STORING MATERIAL IN HIGH-K DIELECTRIC ENVIR...
- Publication number 20150200101
- Publication date Jul 16, 2015
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING INSULATIVE ELEMENTS
- Publication number 20150140773
- Publication date May 21, 2015
- Micron Technology, Inc.
- Vassil Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING MOLYBDENUM NITRIDE, MOLYBDENUM O...
- Publication number 20150102460
- Publication date Apr 16, 2015
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A FERROELECTRIC MEMORY CELL AND RELATED SEMICOND...
- Publication number 20150076437
- Publication date Mar 19, 2015
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL
- Publication number 20150044850
- Publication date Feb 12, 2015
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS

Matthew N. Rocklein

Person

Patents Grantslast 30 patents

Semiconductor devices including ferroelectric materials

Electrode formation

Integrated assemblies comprising stud-type capacitors

Doped titanium nitride materials for DRAM capacitors, and related s...

Forming a barrier material on an electrode

Resistive memory cell

Electrode/dielectric barrier material formation and structures

Tamper-resistant integrated circuits, and related methods

Semiconductor devices including ferroelectric materials

Oxidative trim

Formation of an atomic layer of germanium in an opening of a substr...

Storage node shaping

Integrated assemblies comprising stud-type capacitors

Resistive memory cell

Devices and apparatuses including asymmetric ferroelectric material...

Semiconductor devices including ferroelectric materials

Memory cells and semiconductor devices including ferroelectric mate...

Integrated assemblies comprising stud-type capacitors

Memory cells and semiconductor devices including ferroelectric mate...

Methods of forming a ferroelectric memory cell

Methods of operating ferroelectric memory cells, and related ferroe...

Semiconductor device structures including ferroelectric memory cells

Methods of operating ferroelectric memory cells, and related ferroe...

Fortification of charge-storing material in high-K dielectric envir...

Semiconductor structures including molybdenum nitride, molybdenum o...

Methods of operating ferroelectric memory cells, and related ferroe...

Methods of forming a ferroelectric memory cell

Resistive memory cell

Semiconductor structure including a zirconium oxide material

Fortification of charge storing material in high K dielectric envir...

Patents Applicationslast 30 patents

CAPACITORS WITH ELECTRODES HAVING A PORTION OF MATERIAL REMOVED, AN...

DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED S...

RESISTIVE MEMORY CELL

ELECTRODE/DIELECTRIC BARRIER MATERIAL FORMATION AND STRUCTURES

SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS

TAMPER-RESISTANT INTEGRATED CIRCUITS, AND RELATED METHODS

OXIDATIVE TRIM

ELECTRODE FORMATION

FORMING A BARRIER MATERIAL ON AN ELECTRODE

FORMATION OF AN ATOMIC LAYER OF GERMANIUM ON A SUBSTRATE MATERIAL

RESISTIVE MEMORY CELL

Integrated Assemblies Comprising Stud-Type Capacitors

SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS

DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED S...

DEVICES AND APPARATUSES INCLUDING ASYMMETRIC FERROELECTRIC MATERIAL...

Integrated Assemblies Comprising Stud-Type Capacitors

Integrated Assemblies Comprising Stud-Type Capacitors

SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS

MEMORY CELLS AND SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATE...

RESISTIVE MEMORY CELL

METHODS OF OPERATING FERROELECTRIC MEMORY CELLS, AND RELATED FERROE...

METHODS OF FORMING A FERROELECTRIC MEMORY CELL

METHODS OF OPERATING FERROELECTRIC MEMORY CELLS, AND RELATED FERROE...

SEMICONDUCTOR DEVICE STRUCTURES INCLUDING FERROELECTRIC MEMORY CELLS

RESISTIVE MEMORY CELL

FORTIFICATION OF CHARGE-STORING MATERIAL IN HIGH-K DIELECTRIC ENVIR...

METHODS OF FORMING INSULATIVE ELEMENTS

SEMICONDUCTOR STRUCTURES INCLUDING MOLYBDENUM NITRIDE, MOLYBDENUM O...

METHODS OF FORMING A FERROELECTRIC MEMORY CELL AND RELATED SEMICOND...

RESISTIVE MEMORY CELL