Matthew W. Stoker

Person

Poughskeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Device with large EPI in FinFETs and method of manufacturing
- Patent number 10,910,471
- Issue date Feb 2, 2021
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for forming epitaxial formations wit...
- Patent number 10,529,831
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including laterally recessed source/dr...
- Patent number 10,396,078
- Issue date Aug 27, 2019
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for forming increased surface regions...
- Patent number 10,204,984
- Issue date Feb 12, 2019
- GLOBALFOUNDRIES Inc.
- Matthew W. Stoker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including two-dimensional and three-dimensi...
- Patent number 10,121,706
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Rinus T. P. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including laterally recessed source/dr...
- Patent number 10,020,307
- Issue date Jul 10, 2018
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact resistance optimization via EPI growth engineering
- Patent number 9,673,295
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES Inc.
- Annie Levesque
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted intrinsic epitaxial buffer layer for reducing short channel...
- Patent number 9,287,399
- Issue date Mar 15, 2016
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene transistor with a sublithographic channel width
- Patent number 9,236,477
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistors having heteroepitaxial channels
- Patent number 9,190,406
- Issue date Nov 17, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted intrinsic epitaxial buffer layer for reducing short channel...
- Patent number 8,940,595
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing strain-inducing materials in CMOS circuits in a...
- Patent number 8,779,525
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device
- Patent number 8,618,617
- Issue date Dec 31, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device
- Patent number 8,492,234
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing strain-inducing materials in CMOS circuits in a...
- Patent number 8,426,265
- Issue date Apr 23, 2013
- International Business Machines Corporation
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed transistor with improved metastability
- Patent number 8,361,859
- Issue date Jan 29, 2013
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR WITH FACETED, RAISED SOURCE/DRAIN REGION
- Publication number 20230146952
- Publication date May 11, 2023
- GLOBALFOUNDRIES U.S. Inc.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH LARGE EPI IN FINFETS AND METHOD OF MANUFACTURING
- Publication number 20200020769
- Publication date Jan 16, 2020
- GLOBALFOUNDRIES INC.
- Jianwei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR FORMING INCREASED SURFACE REGIONS...
- Publication number 20190043944
- Publication date Feb 7, 2019
- GLOBALFOUNDRIES INC.
- Matthew W. Stoker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE INCLUDING LATERALLY RECESSED SOURCE/DR...
- Publication number 20180286863
- Publication date Oct 4, 2018
- GLOBALFOUNDRIES INC.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER TO INHIBIT WORMHOLES IN SEMICONDUCTOR FABRICATION
- Publication number 20180197734
- Publication date Jul 12, 2018
- GLOBALFOUNDRIES INC.
- Bhupesh CHANDRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING TWO-DIMENSIONAL AND THREE-DIMENSI...
- Publication number 20180151449
- Publication date May 31, 2018
- GLOBALFOUNDRIES INC.
- Rinus T. P. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE OPTIMIZATION VIA EPI GROWTH ENGINEERING
- Publication number 20150349068
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Annie Levesque
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE TRANSISTOR WITH A SUBLITHOGRAPHIC CHANNEL WIDTH
- Publication number 20150236147
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS HAVING HETEROEPITAXIAL CHANNELS
- Publication number 20150206876
- Publication date Jul 23, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH RELAXED SILICON-GERMANIUM FINS
- Publication number 20150097270
- Publication date Apr 9, 2015
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...
- Publication number 20150084096
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...
- Publication number 20140264558
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20130175547
- Publication date Jul 11, 2013
- GLOBALFOUNDRIES, INC.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...
- Publication number 20130161759
- Publication date Jun 27, 2013
- GlobalFoundries, Inc.
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED TRANSISTOR WITH IMPROVED METASTABILITY
- Publication number 20130134444
- Publication date May 30, 2013
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED TRANSISTOR WITH IMPROVED METASTABILITY
- Publication number 20120112208
- Publication date May 10, 2012
- International Business Machines Corporation
- THOMAS N. ADAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...
- Publication number 20120104507
- Publication date May 3, 2012
- International Business Machines Corporation
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Device
- Publication number 20110316046
- Publication date Dec 29, 2011
- GLOBALFOUNDRIES INC.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS

Matthew W. Stoker

Person

Patents Grantslast 30 patents

Device with large EPI in FinFETs and method of manufacturing

Methods, apparatus, and system for forming epitaxial formations wit...

Integrated circuit structure including laterally recessed source/dr...

Methods, apparatus and system for forming increased surface regions...

Semiconductor structure including two-dimensional and three-dimensi...

Integrated circuit structure including laterally recessed source/dr...

Contact resistance optimization via EPI growth engineering

Faceted intrinsic epitaxial buffer layer for reducing short channel...

Graphene transistor with a sublithographic channel width

Fin field effect transistors having heteroepitaxial channels

Faceted intrinsic epitaxial buffer layer for reducing short channel...

Method for growing strain-inducing materials in CMOS circuits in a...

Field effect transistor device

Field effect transistor device

Method for growing strain-inducing materials in CMOS circuits in a...

Stressed transistor with improved metastability

Patents Applicationslast 30 patents

TRANSISTOR WITH FACETED, RAISED SOURCE/DRAIN REGION

DEVICE WITH LARGE EPI IN FINFETS AND METHOD OF MANUFACTURING

METHODS, APPARATUS AND SYSTEM FOR FORMING INCREASED SURFACE REGIONS...

INTEGRATED CIRCUIT STRUCTURE INCLUDING LATERALLY RECESSED SOURCE/DR...

BUFFER LAYER TO INHIBIT WORMHOLES IN SEMICONDUCTOR FABRICATION

SEMICONDUCTOR STRUCTURE INCLUDING TWO-DIMENSIONAL AND THREE-DIMENSI...

CONTACT RESISTANCE OPTIMIZATION VIA EPI GROWTH ENGINEERING

GRAPHENE TRANSISTOR WITH A SUBLITHOGRAPHIC CHANNEL WIDTH

FIN FIELD EFFECT TRANSISTORS HAVING HETEROEPITAXIAL CHANNELS

FINFET WITH RELAXED SILICON-GERMANIUM FINS

FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...

FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...

FIELD EFFECT TRANSISTOR DEVICE

METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...

STRESSED TRANSISTOR WITH IMPROVED METASTABILITY

STRESSED TRANSISTOR WITH IMPROVED METASTABILITY

METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...

Field Effect Transistor Device