Meng Ding

Person

Mountian View, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
System and method for manufacturing self-aligned STI with single poly
- Patent number 9,276,007
- Issue date Mar 1, 2016
- Cypress Semiconductor Corporation
- Tim Thurgate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory cell with flair gate
- Patent number 9,190,531
- Issue date Nov 17, 2015
- Cypress Semiconductor Corporation
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell system with multiple nitride layers
- Patent number 8,809,936
- Issue date Aug 19, 2014
- GLOBALFOUNDRIES Inc.
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell system using silicon-rich nitride
- Patent number 8,803,216
- Issue date Aug 12, 2014
- Spansion, LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned STI with single poly for manufacturing a flash memory...
- Patent number 8,642,441
- Issue date Feb 4, 2014
- Spansion LLC
- Tim Thurgate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell system with charge trap
- Patent number 8,587,049
- Issue date Nov 19, 2013
- Spansion, LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strapping contact for charge protection
- Patent number 8,404,541
- Issue date Mar 26, 2013
- Spansion LLC
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory cell with a flair gate
- Patent number 8,367,537
- Issue date Feb 5, 2013
- Spansion LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell system with charge trap
- Patent number 8,143,661
- Issue date Mar 27, 2012
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory programming and verification with reduced leakage current
- Patent number 8,031,528
- Issue date Oct 4, 2011
- Spansion LLC
- Ashot Melik-Martirosian
- G11 - INFORMATION STORAGE
Information Patent Grant
Strapping contact for charge protection
- Patent number 7,750,407
- Issue date Jul 6, 2010
- Spansion LLC
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory programming and verification with reduced leakage current
- Patent number 7,630,253
- Issue date Dec 8, 2009
- Spansion LLC
- Ashot Melik-Martirosian
- G11 - INFORMATION STORAGE
Information Patent Grant
Back-to-back NPN/PNP protection diodes
- Patent number 7,573,103
- Issue date Aug 11, 2009
- Spansion LLC
- Yi He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and methods for its fabrication
- Patent number 7,564,091
- Issue date Jul 21, 2009
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-bit memory cell having conductive charge storage segments and m...
- Patent number 7,538,383
- Issue date May 26, 2009
- Spansion LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing a low-stress sensor configuration for a lithogr...
- Patent number 7,469,465
- Issue date Dec 30, 2008
- Hitachi Global Storage Technologies Netherlands B.V.
- Meng Ding
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-pinned read sensor design with enhanced lead stabilizing mecha...
- Patent number 7,463,459
- Issue date Dec 9, 2008
- Hitachi Global Storage Technologies Netherlands B.V.
- Meng Ding
- G11 - INFORMATION STORAGE
Information Patent Grant
Negative wordline bias for reduction of leakage current during flas...
- Patent number 7,463,525
- Issue date Dec 9, 2008
- Spansion LLC
- Wei Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and methods for its fabrication
- Patent number 7,432,156
- Issue date Oct 7, 2008
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for erasing and programming memory devices
- Patent number 7,394,702
- Issue date Jul 1, 2008
- Spansion LLC
- Meng Ding
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell having enhanced high-K dielectric
- Patent number 7,365,389
- Issue date Apr 29, 2008
- Spansion LLC
- Joong Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a magnetoresistive read head having a pinned laye...
- Patent number 7,346,977
- Issue date Mar 25, 2008
- Hitachi Global Storage Technologies Netherlands B.V.
- Marie-Claire Cyrille
- G11 - INFORMATION STORAGE
Information Patent Grant
Device with ESD protection utilizing a shorting material between el...
- Patent number 7,345,853
- Issue date Mar 18, 2008
- Hitachi Global Storage Technologies Netherlands B.V.
- Meng Ding
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for determining wordline critical dimension in a memory arra...
- Patent number 7,339,222
- Issue date Mar 4, 2008
- Spansion LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a read sensor while protecting it from electrostat...
- Patent number 7,291,279
- Issue date Nov 6, 2007
- Hitachi Global Storage Technologies Netherlands B.V.
- Frederick Hayes Dill
- G11 - INFORMATION STORAGE
Information Patent Grant
Back-to-back NPN/PNP protection diodes
- Patent number 7,285,827
- Issue date Oct 23, 2007
- Spansion LLC
- Yi He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Repeatable ESD protection utilizing a process for unshorting a firs...
- Patent number 7,236,334
- Issue date Jun 26, 2007
- Hitachi Global Storage Technologies Netherlands B.V.
- Meng Ding
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Electrical lapping guide embedded in a shield of a magnetic head
- Patent number 7,206,172
- Issue date Apr 17, 2007
- Hitachi Global Storage Technologies Netherlands B.V.
- Meng Ding
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive sensor with decoupled hard bias multilayers
- Patent number 7,199,986
- Issue date Apr 3, 2007
- Hitachi Global Storage Technologies
- Marie-Claire Cyrille
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for biasing magnetoresistive sensor with decoupled hard bias...
- Patent number 7,072,156
- Issue date Jul 4, 2006
- Hitachi Global Storage Technologies Netherlands B.V.
- Marie-Claire Cyrille
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SYSTEM AND METHOD FOR MANUFACTURING SELF-ALIGNED STI WITH SINGLE POLY
- Publication number 20140312409
- Publication date Oct 23, 2014
- SPANSION LLC
- Tim Thurgate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device with Charge Trap
- Publication number 20140061771
- Publication date Mar 6, 2014
- SPANSION, LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY CELL WITH FLAIR GATE
- Publication number 20130105878
- Publication date May 2, 2013
- SPANSION LLC
- Meng DING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAPPING CONTACT FOR CHARGE PROTECTION
- Publication number 20100240210
- Publication date Sep 23, 2010
- SPANSION LLC
- Wei ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY PROGRAMMING AND VERIFICATION WITH REDUCED LEAKAGE CURRENT
- Publication number 20100027350
- Publication date Feb 4, 2010
- Ashot Melik-Martirosian
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHODS FOR ITS FABRICATION
- Publication number 20080315290
- Publication date Dec 25, 2008
- Chungho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash memory cell with a flair gate
- Publication number 20080277712
- Publication date Nov 13, 2008
- SPANSION LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SYSTEM WITH DEPLETION GATE
- Publication number 20080150005
- Publication date Jun 26, 2008
- SPANSION LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SYSTEM WITH SELECT GATE ERASE
- Publication number 20080150000
- Publication date Jun 26, 2008
- SPANSION LLC
- YouSeok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE WORDLINE BIAS FOR REDUCTION OF LEAKAGE CURRENT DURING FLAS...
- Publication number 20080151634
- Publication date Jun 26, 2008
- Wei Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH MEMORY SYSTEM
- Publication number 20080150011
- Publication date Jun 26, 2008
- SPANSION LLC
- Simon Siu-Sing Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAPPING CONTACT FOR CHARGE PROTECTION
- Publication number 20080142889
- Publication date Jun 19, 2008
- SPANSION LLC
- Wei ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL SYSTEM WITH CHARGE TRAP
- Publication number 20080083946
- Publication date Apr 10, 2008
- SPANSION LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash memory cell structure for increased program speed and erase s...
- Publication number 20080079061
- Publication date Apr 3, 2008
- Advanced Micro Devices, Inc.
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL SYSTEM WITH NITRIDE CHARGE ISOLATION
- Publication number 20080032464
- Publication date Feb 7, 2008
- SPANSION LLC
- Amol Ramesh Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL SYSTEM WITH GRADIENT CHARGE ISOLATION
- Publication number 20080032475
- Publication date Feb 7, 2008
- SPANSION LLC
- Amol Ramesh Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL SYSTEM WITH MULTIPLE NITRIDE LAYERS
- Publication number 20080023750
- Publication date Jan 31, 2008
- SPANSION LLC
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL SYSTEM WITH CHARGE TRAP
- Publication number 20080012060
- Publication date Jan 17, 2008
- SPANSION LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for erasing and programming memory devices
- Publication number 20070247923
- Publication date Oct 25, 2007
- Meng Ding
- G11 - INFORMATION STORAGE
Information Patent Application
Methods for erasing memory devices and multi-level programming memo...
- Publication number 20070247924
- Publication date Oct 25, 2007
- Wei Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
Flash memory programming and verification with reduced leakage current
- Publication number 20070237003
- Publication date Oct 11, 2007
- Ashot Melik-Martirosian
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE WITH ESD PROTECTION
- Publication number 20070223148
- Publication date Sep 27, 2007
- HITACHI GLOBAL STORAGE TECHNOLOGIES
- Meng Ding
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
MEMORY CELL SYSTEM USING SILICON-RICH NITRIDE
- Publication number 20070215932
- Publication date Sep 20, 2007
- SPANSION LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Read-only memory array with dielectric breakdown programmability
- Publication number 20060268593
- Publication date Nov 30, 2006
- Spansion LLC
- Meng Ding
- G11 - INFORMATION STORAGE
Information Patent Application
Method for making a magnetoresistive read head having a pinned laye...
- Publication number 20060196040
- Publication date Sep 7, 2006
- Marie-Claire Cyrille
- G01 - MEASURING TESTING
Information Patent Application
Repeatable ESD protection
- Publication number 20060044702
- Publication date Mar 2, 2006
- HITACHI GLOBAL STORAGE TECHNOLOGIES
- Meng Ding
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
Method of providing a low-stress sensor configuration for a lithogr...
- Publication number 20060000079
- Publication date Jan 5, 2006
- Meng Ding
- G11 - INFORMATION STORAGE
Information Patent Application
Method of making a read sensor while protecting it from electrostat...
- Publication number 20050241138
- Publication date Nov 3, 2005
- Frederick Hayes Dill
- G11 - INFORMATION STORAGE
Information Patent Application
Electrical lapping guide embedded in a shield of a magnetic head
- Publication number 20050185345
- Publication date Aug 25, 2005
- Meng Ding
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive sensor with decoupled hard bias multilayers
- Publication number 20050180064
- Publication date Aug 18, 2005
- Marie-Claire Cyrille
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

System and method for manufacturing self-aligned STI with single poly

Flash memory cell with flair gate

Memory cell system with multiple nitride layers

Memory cell system using silicon-rich nitride

Self-aligned STI with single poly for manufacturing a flash memory...

Memory cell system with charge trap

Strapping contact for charge protection

Flash memory cell with a flair gate

Memory cell system with charge trap

Flash memory programming and verification with reduced leakage current

Strapping contact for charge protection

Flash memory programming and verification with reduced leakage current

Back-to-back NPN/PNP protection diodes

Memory device and methods for its fabrication

Two-bit memory cell having conductive charge storage segments and m...

Method of providing a low-stress sensor configuration for a lithogr...

Self-pinned read sensor design with enhanced lead stabilizing mecha...

Negative wordline bias for reduction of leakage current during flas...

Memory device and methods for its fabrication

Methods for erasing and programming memory devices

Memory cell having enhanced high-K dielectric

Method for making a magnetoresistive read head having a pinned laye...

Device with ESD protection utilizing a shorting material between el...

Method for determining wordline critical dimension in a memory arra...

Method of making a read sensor while protecting it from electrostat...

Back-to-back NPN/PNP protection diodes

Repeatable ESD protection utilizing a process for unshorting a firs...

Electrical lapping guide embedded in a shield of a magnetic head

Magnetoresistive sensor with decoupled hard bias multilayers

Method for biasing magnetoresistive sensor with decoupled hard bias...

Patents Applicationslast 30 patents

SYSTEM AND METHOD FOR MANUFACTURING SELF-ALIGNED STI WITH SINGLE POLY

Memory Device with Charge Trap

FLASH MEMORY CELL WITH FLAIR GATE

STRAPPING CONTACT FOR CHARGE PROTECTION

FLASH MEMORY PROGRAMMING AND VERIFICATION WITH REDUCED LEAKAGE CURRENT

MEMORY DEVICE AND METHODS FOR ITS FABRICATION

Flash memory cell with a flair gate

MEMORY SYSTEM WITH DEPLETION GATE

MEMORY SYSTEM WITH SELECT GATE ERASE

NEGATIVE WORDLINE BIAS FOR REDUCTION OF LEAKAGE CURRENT DURING FLAS...

INTEGRATED CIRCUIT SYSTEM WITH MEMORY SYSTEM

STRAPPING CONTACT FOR CHARGE PROTECTION

MEMORY CELL SYSTEM WITH CHARGE TRAP

Flash memory cell structure for increased program speed and erase s...

MEMORY CELL SYSTEM WITH NITRIDE CHARGE ISOLATION

MEMORY CELL SYSTEM WITH GRADIENT CHARGE ISOLATION

MEMORY CELL SYSTEM WITH MULTIPLE NITRIDE LAYERS

MEMORY CELL SYSTEM WITH CHARGE TRAP

Methods for erasing and programming memory devices

Methods for erasing memory devices and multi-level programming memo...

Flash memory programming and verification with reduced leakage current

DEVICE WITH ESD PROTECTION

MEMORY CELL SYSTEM USING SILICON-RICH NITRIDE

Read-only memory array with dielectric breakdown programmability

Method for making a magnetoresistive read head having a pinned laye...

Repeatable ESD protection

Method of providing a low-stress sensor configuration for a lithogr...

Method of making a read sensor while protecting it from electrostat...

Electrical lapping guide embedded in a shield of a magnetic head

Magnetoresistive sensor with decoupled hard bias multilayers