Michael S. Mazzola

Person

Starkville, MS, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bandwidth-based methodology for controlling and optimally designing...
- Patent number 10,131,341
- Issue date Nov 20, 2018
- Mississippi State University
- Masood Shahverdi
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Vertical junction field effect transistors and diodes having graded...
- Patent number 8,928,074
- Issue date Jan 6, 2015
- Power Integrations, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuits employing normally on switches and methods of...
- Patent number 8,860,494
- Issue date Oct 14, 2014
- Power Integrations, Inc.
- Michael S. Mazzola
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Optically controlled silicon carbide and related wide-bandgap trans...
- Patent number 8,853,710
- Issue date Oct 7, 2014
- Power Integrations, Inc.
- Michael S. Mazzola
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Silicon carbide and related wide-bandgap transistors on semi insula...
- Patent number 8,592,826
- Issue date Nov 26, 2013
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuits employing normally on switches and methods of...
- Patent number 8,456,218
- Issue date Jun 4, 2013
- Power Integrations, Inc.
- Michael S. Mazzola
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Optically controlled silicon carbide and related wide-bandgap trans...
- Patent number 8,455,328
- Issue date Jun 4, 2013
- Power Integrations, Inc.
- Michael S. Mazzola
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Junction barrier schottky rectifiers having epitaxially grown P+-N...
- Patent number 8,384,182
- Issue date Feb 26, 2013
- Power Integrations, Inc.
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optically controlled silicon carbide and related wide-bandgap trans...
- Patent number 8,193,537
- Issue date Jun 5, 2012
- SS SC IP, LLC
- Michael S. Mazzola
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Silicon carbide and related wide-bandgap transistors on semi insula...
- Patent number 8,183,124
- Issue date May 22, 2012
- SS SC IP, LLC
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical junction field effect transistors and diodes having graded...
- Patent number 8,169,022
- Issue date May 1, 2012
- SS SC IP, LLC
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power conversion components, systems and methods
- Patent number 7,978,483
- Issue date Jul 12, 2011
- Mississippi State University
- Michael S. Mazzola
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Half-bridge circuits employing normally on switches and methods of...
- Patent number 7,907,001
- Issue date Mar 15, 2011
- SemiSouth Laboratories, Inc.
- Michael S. Mazzola
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Silicon carbide and related wide-bandgap transistors on semi insula...
- Patent number 7,821,015
- Issue date Oct 26, 2010
- SemiSouth Laboratories, Inc.
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-channel junction field-effect transistors having buried ga...
- Patent number 7,638,379
- Issue date Dec 29, 2009
- SemiSouth Laboratories, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuits employing normally on switches and methods of...
- Patent number 7,602,228
- Issue date Oct 13, 2009
- SemiSouth Laboratories, Inc.
- Michael S. Mazzola
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Power conversion
- Patent number 7,499,290
- Issue date Mar 3, 2009
- Mississippi State University
- Michael S. Mazzola
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Silicon carbide and related wide-bandgap transistors on semi-insula...
- Patent number 7,432,171
- Issue date Oct 7, 2008
- Mississippi State University Research and Technology Corporation (RTC)
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic vertical junction field effect transistor and schottky b...
- Patent number 7,416,929
- Issue date Aug 26, 2008
- SemiSouth Laboratories, Inc.
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic vertical junction field effect transistor and Schottky b...
- Patent number 7,294,860
- Issue date Nov 13, 2007
- Mississippi State University
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide and related wide-bandgap transistors on semi-insula...
- Patent number 7,009,209
- Issue date Mar 7, 2006
- Mississippi State University Research and Technology Corporation (RTC)
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned transistor and diode topologies in silicon carbide thr...
- Patent number 6,767,783
- Issue date Jul 27, 2004
- Mississippi State University Research and Technology Corporation (RTC)
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary accumulation-mode JFET integrated circuit topology us...
- Patent number 6,503,782
- Issue date Jan 7, 2003
- Mississippi State University Research and Technology Corporation (RTC)
- Jeffrey Blaine Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transist...
- Patent number 6,410,396
- Issue date Jun 25, 2002
- Mississippi State University
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Bandwidth-Based Methodology for Controlling and Optimally Designing...
- Publication number 20160368482
- Publication date Dec 22, 2016
- Masood Shahverdi
- B60 - VEHICLES IN GENERAL
Information Patent Application
SOLID-STATE CIRCUIT BREAKERS
- Publication number 20140029152
- Publication date Jan 30, 2014
- SEMISOUTH LABORATORIES, INC.
- Michael MAZZOLA
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANS...
- Publication number 20130320199
- Publication date Dec 5, 2013
- Power Integrations, Inc.
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF...
- Publication number 20130265095
- Publication date Oct 10, 2013
- Michael S. MAZZOLA
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N...
- Publication number 20130140585
- Publication date Jun 6, 2013
- Power Integrations, Inc.
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANS...
- Publication number 20120214275
- Publication date Aug 23, 2012
- SS SC IP, LLC
- Michael S. MAZZOLA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULA...
- Publication number 20120199940
- Publication date Aug 9, 2012
- SS SC IP, LLC
- Michael S. MAZZOLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND DIODES HAVING GRADED...
- Publication number 20120187421
- Publication date Jul 26, 2012
- SEMISOUTH LABORATORIES, INC.
- Lin CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF...
- Publication number 20110121884
- Publication date May 26, 2011
- SEMISOUTH LABORATORIES, INC.
- Michael S. Mazzola
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULA...
- Publication number 20110003456
- Publication date Jan 6, 2011
- SEMISOUTH LABORATORIES, INC.
- Michael S. MAZZOLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND DIODES HAVING GRADED...
- Publication number 20100320476
- Publication date Dec 23, 2010
- SEMISOUTH LABORATORIES, INC.
- Lin CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF...
- Publication number 20100026370
- Publication date Feb 4, 2010
- SEMISOUTH LABORATORIES, INC.
- Michael S. Mazzola
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
POWER CONVERSION COMPONENTS, SYSTEMS AND METHODS
- Publication number 20100020581
- Publication date Jan 28, 2010
- MISSISSIPPI STATE UNIVERSITY
- Michael S. Mazzola
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Half-bridge circuits employing normally on switches and methods of...
- Publication number 20080290927
- Publication date Nov 27, 2008
- Michael S. Mazzola
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N...
- Publication number 20080251793
- Publication date Oct 16, 2008
- SEMISOUTH LABORATORIES, INC.
- Michael S. MAZZOLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS HAVING BURIED GA...
- Publication number 20080124853
- Publication date May 29, 2008
- SEMISOUTH LABORATORIES, INC.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolithic vertical junction field effect transistor and schottky b...
- Publication number 20080003731
- Publication date Jan 3, 2008
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULA...
- Publication number 20070290212
- Publication date Dec 20, 2007
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANS...
- Publication number 20070292074
- Publication date Dec 20, 2007
- Michael S. Mazzola
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Junction barrier schottky rectifiers having epitaxially grown p+-n...
- Publication number 20070228505
- Publication date Oct 4, 2007
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical-channel junction field-effect transistors having buried ga...
- Publication number 20070029573
- Publication date Feb 8, 2007
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide and related wide-bandgap transistors on semi-insula...
- Publication number 20060160316
- Publication date Jul 20, 2006
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolithic vertical junction field effect transistor and schottky b...
- Publication number 20060011924
- Publication date Jan 19, 2006
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned transistor and diode topologies in silicon carbide thr...
- Publication number 20030034495
- Publication date Feb 20, 2003
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide and related wide-bandgap transistors on semi-insula...
- Publication number 20020149021
- Publication date Oct 17, 2002
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary accumulation-mode JFET integrated circuit topology us...
- Publication number 20020123174
- Publication date Sep 5, 2002
- Jeffrey Blaine Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE: GERMANIUM (SIC:GE) HETEROJUNCTION BIPOLAR TRANSIST...
- Publication number 20020076890
- Publication date Jun 20, 2002
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS

Michael S. Mazzola

Person

Patents Grantslast 30 patents

Bandwidth-based methodology for controlling and optimally designing...

Vertical junction field effect transistors and diodes having graded...

Half-bridge circuits employing normally on switches and methods of...

Optically controlled silicon carbide and related wide-bandgap trans...

Silicon carbide and related wide-bandgap transistors on semi insula...

Half-bridge circuits employing normally on switches and methods of...

Optically controlled silicon carbide and related wide-bandgap trans...

Junction barrier schottky rectifiers having epitaxially grown P+-N...

Optically controlled silicon carbide and related wide-bandgap trans...

Silicon carbide and related wide-bandgap transistors on semi insula...

Vertical junction field effect transistors and diodes having graded...

Power conversion components, systems and methods

Half-bridge circuits employing normally on switches and methods of...

Silicon carbide and related wide-bandgap transistors on semi insula...

Vertical-channel junction field-effect transistors having buried ga...

Half-bridge circuits employing normally on switches and methods of...

Power conversion

Silicon carbide and related wide-bandgap transistors on semi-insula...

Monolithic vertical junction field effect transistor and schottky b...

Monolithic vertical junction field effect transistor and Schottky b...

Silicon carbide and related wide-bandgap transistors on semi-insula...

Self-aligned transistor and diode topologies in silicon carbide thr...

Complementary accumulation-mode JFET integrated circuit topology us...

Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transist...

Patents Applicationslast 30 patents

Bandwidth-Based Methodology for Controlling and Optimally Designing...

SOLID-STATE CIRCUIT BREAKERS

OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANS...

HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF...

JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N...

OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANS...

SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULA...

VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND DIODES HAVING GRADED...

HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF...

SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULA...

VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND DIODES HAVING GRADED...

HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF...

POWER CONVERSION COMPONENTS, SYSTEMS AND METHODS

Half-bridge circuits employing normally on switches and methods of...

JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N...

VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS HAVING BURIED GA...

Monolithic vertical junction field effect transistor and schottky b...

SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULA...

OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANS...

Junction barrier schottky rectifiers having epitaxially grown p+-n...

Vertical-channel junction field-effect transistors having buried ga...

Silicon Carbide and related wide-bandgap transistors on semi-insula...

Monolithic vertical junction field effect transistor and schottky b...

Self-aligned transistor and diode topologies in silicon carbide thr...

Silicon carbide and related wide-bandgap transistors on semi-insula...

Complementary accumulation-mode JFET integrated circuit topology us...

SILICON CARBIDE: GERMANIUM (SIC:GE) HETEROJUNCTION BIPOLAR TRANSIST...