Michael V. AQUILINO

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field-effect transistors with diffusion blocking spacer sections
- Patent number 11,101,364
- Issue date Aug 24, 2021
- GLOBALFOUNDRIES U.S. INC.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures of a semiconductor device having a wide gate p...
- Patent number 10,971,625
- Issue date Apr 6, 2021
- GLOBALFOUNDRIES U.S. INC.
- Michael V Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure
- Patent number 10,930,549
- Issue date Feb 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with self-aligned and non-self-aligned con...
- Patent number 10,833,160
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Michael Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for reducing gate cut gouging and/or...
- Patent number 10,644,156
- Issue date May 5, 2020
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for stringer defect reduction in a tr...
- Patent number 10,522,639
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure
- Patent number 10,460,986
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tone inversion method and structure for selective contact via patte...
- Patent number 10,453,751
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Xiaofeng Qiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for stringer defect reduction in a tr...
- Patent number 10,418,455
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for self-aligned metal hard masks
- Patent number 10,340,142
- Issue date Jul 2, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for providing a pre-RMG replacement m...
- Patent number 10,325,819
- Issue date Jun 18, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for replacement contact for a finFET...
- Patent number 10,269,654
- Issue date Apr 23, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for reducing step height difference...
- Patent number 10,204,797
- Issue date Feb 12, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to prevent EPI short between trenches in FinFE...
- Patent number 10,177,154
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact line having insulating spacer therein and method of forming...
- Patent number 10,049,985
- Issue date Aug 14, 2018
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact etch for fabricating a FinFET
- Patent number 9,905,473
- Issue date Feb 27, 2018
- GLOBALFOUNDRIES Inc.
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to prevent EPI short between trenches in FINFE...
- Patent number 9,818,741
- Issue date Nov 14, 2017
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact line having insulating spacer therein and method of forming...
- Patent number 9,812,400
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fin on local oxide
- Patent number 9,035,430
- Issue date May 19, 2015
- International Business Machines Corporation
- Reinaldo A. Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming facet-less epitaxy with self-aligned isolation
- Patent number 8,969,163
- Issue date Mar 3, 2015
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sealed shallow trench isolation region
- Patent number 8,859,388
- Issue date Oct 14, 2014
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate device
- Patent number 8,853,796
- Issue date Oct 7, 2014
- GLOBALFOUNDIERS Singapore Pte. Ltd.
- Young Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation structure
- Patent number 8,704,310
- Issue date Apr 22, 2014
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming facet-less epitaxy with a cut mask
- Patent number 8,658,486
- Issue date Feb 25, 2014
- International Business Machines Corporation
- Michael Vincent Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation structure
- Patent number 8,623,713
- Issue date Jan 7, 2014
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling structure height
- Patent number 8,557,649
- Issue date Oct 15, 2013
- International Business Machines Corporation
- Rajasekhar Venigalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS SiGe channel pFET and Si channel nFET devices with minimal STI...
- Patent number 8,053,301
- Issue date Nov 8, 2011
- International Business Machines Corporation
- Daniel J. Jaeger
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL STRUCTURES OF A SEMICONDUCTOR DEVICE HAVING A WIDE GATE P...
- Publication number 20200411689
- Publication date Dec 31, 2020
- GLOBALFOUNDRIES INC.
- MICHAEL V. AQUILINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED AND NON-SELF-ALIGNED CON...
- Publication number 20200335591
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Michael Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH DIFFUSION BLOCKING SPACER SECTIONS
- Publication number 20200287019
- Publication date Sep 10, 2020
- GLOBALFOUNDRIES INC.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE
- Publication number 20200013672
- Publication date Jan 9, 2020
- GLOBALFOUNDRIES INC.
- Jinsheng GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...
- Publication number 20190326408
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS, AND SYSTEM FOR REDUCING GATE CUT GOUGING AND/OR...
- Publication number 20190280114
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE
- Publication number 20190237363
- Publication date Aug 1, 2019
- GLOBALFOUNDRIES INC.
- Jinsheng GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...
- Publication number 20190097015
- Publication date Mar 28, 2019
- GLOBALFOUDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TONE INVERSION METHOD AND STRUCTURE FOR SELECTIVE CONTACT VIA PATTE...
- Publication number 20180261510
- Publication date Sep 13, 2018
- GLOBALFOUNDRIES INC.
- Xiaofeng QIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT LINE HAVING INSULATING SPACER THEREIN AND METHOD OF FORMING...
- Publication number 20170373007
- Publication date Dec 28, 2017
- GLOBALFOUNDRIES INC.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFE...
- Publication number 20170365606
- Publication date Dec 21, 2017
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT LINE HAVING INSULATING SPACER THEREIN AND METHOD OF FORMING...
- Publication number 20170330834
- Publication date Nov 16, 2017
- GLOBALFOUNDRIES INC.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFE...
- Publication number 20170005098
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN ON LOCAL OXIDE
- Publication number 20150044843
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Michael V. AQUILINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN ON LOCAL OXIDE
- Publication number 20140061862
- Publication date Mar 6, 2014
- International Business Machines Corporation
- Reinaldo A. VEGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING FACET-LESS EPITAXY WITH SELF-ALIGNED ISOLATION
- Publication number 20140027820
- Publication date Jan 30, 2014
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEALED SHALLOW TRENCH ISOLATION REGION
- Publication number 20140015092
- Publication date Jan 16, 2014
- GLOBALFOUNDRIES INC.
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING FACET-LESS EPITAXY WITH A CUT MASK
- Publication number 20130313647
- Publication date Nov 28, 2013
- International Business Machines Corporation
- Michael Vincent Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION STRUCTURE
- Publication number 20130146985
- Publication date Jun 13, 2013
- International Business Machines Corporation
- Michael V. AQUILINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL G...
- Publication number 20130140670
- Publication date Jun 6, 2013
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING STRUCTURE HEIGHT
- Publication number 20130102125
- Publication date Apr 25, 2013
- International Business Machines Corporation
- Rajasekhar Venigalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION STRUCTURE
- Publication number 20130069160
- Publication date Mar 21, 2013
- International Business Machines Corporation
- Michael V. AQUILINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE DEVICE
- Publication number 20120292719
- Publication date Nov 22, 2012
- International Business Machines Corporation
- Young Way TEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL G...
- Publication number 20120187522
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS SIGE CHANNEL PFET AND SI CHANNEL NFET DEVICES WITH MINIMAL STI...
- Publication number 20100244198
- Publication date Sep 30, 2010
- International Business Machines Corporation
- Daniel J. Jaeger
- H01 - BASIC ELECTRIC ELEMENTS

Michael V. AQUILINO

Person

Patents Grantslast 30 patents

Field-effect transistors with diffusion blocking spacer sections

Epitaxial structures of a semiconductor device having a wide gate p...

Cap structure

Field-effect transistors with self-aligned and non-self-aligned con...

Methods, apparatus, and system for reducing gate cut gouging and/or...

Methods, apparatus and system for stringer defect reduction in a tr...

Cap structure

Tone inversion method and structure for selective contact via patte...

Methods, apparatus and system for stringer defect reduction in a tr...

Methods, apparatus and system for self-aligned metal hard masks

Methods, apparatus and system for providing a pre-RMG replacement m...

Methods, apparatus and system for replacement contact for a finFET...

Methods, apparatus, and system for reducing step height difference...

Structure and method to prevent EPI short between trenches in FinFE...

Contact line having insulating spacer therein and method of forming...

Self-aligned contact etch for fabricating a FinFET

Structure and method to prevent EPI short between trenches in FINFE...

Contact line having insulating spacer therein and method of forming...

Semiconductor fin on local oxide

Forming facet-less epitaxy with self-aligned isolation

Sealed shallow trench isolation region

High-K metal gate device

Trench isolation structure

Forming facet-less epitaxy with a cut mask

Trench isolation structure

Method for controlling structure height

CMOS SiGe channel pFET and Si channel nFET devices with minimal STI...

Patents Applicationslast 30 patents

EPITAXIAL STRUCTURES OF A SEMICONDUCTOR DEVICE HAVING A WIDE GATE P...

FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED AND NON-SELF-ALIGNED CON...

FIELD-EFFECT TRANSISTORS WITH DIFFUSION BLOCKING SPACER SECTIONS

CAP STRUCTURE

METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...

METHODS, APPARATUS, AND SYSTEM FOR REDUCING GATE CUT GOUGING AND/OR...

CAP STRUCTURE

METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...

TONE INVERSION METHOD AND STRUCTURE FOR SELECTIVE CONTACT VIA PATTE...

CONTACT LINE HAVING INSULATING SPACER THEREIN AND METHOD OF FORMING...

STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFE...

CONTACT LINE HAVING INSULATING SPACER THEREIN AND METHOD OF FORMING...

STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFE...

SEMICONDUCTOR FIN ON LOCAL OXIDE

SEMICONDUCTOR FIN ON LOCAL OXIDE

FORMING FACET-LESS EPITAXY WITH SELF-ALIGNED ISOLATION

SEALED SHALLOW TRENCH ISOLATION REGION

FORMING FACET-LESS EPITAXY WITH A CUT MASK

TRENCH ISOLATION STRUCTURE

STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL G...

METHOD FOR CONTROLLING STRUCTURE HEIGHT

TRENCH ISOLATION STRUCTURE

HIGH-K METAL GATE DEVICE

STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL G...

CMOS SIGE CHANNEL PFET AND SI CHANNEL NFET DEVICES WITH MINIMAL STI...