Milton J. Boden JR.

Person

Redondo Beach, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trench MOSgated device with deep trench between gate trenches
- Patent number 8,125,024
- Issue date Feb 28, 2012
- International Rectifier Corporation
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P channel Rad Hard MOSFET with enhancement implant
- Patent number 7,547,585
- Issue date Jun 16, 2009
- International Rectifier Corporation
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alternating implant ring terminations
- Patent number 6,965,130
- Issue date Nov 15, 2005
- International Rectifier Corporation
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOS device and process for radhard device
- Patent number 6,798,016
- Issue date Sep 28, 2004
- International Rectifier Corporation
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rad hard MOSFET with graded body diode junction and reduced on resi...
- Patent number 6,747,312
- Issue date Jun 8, 2004
- International Rectifier Corporation
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage rad hard MOSFET
- Patent number 6,707,103
- Issue date Mar 16, 2004
- International Rectifier Corporation
- Milton Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated radiation hardened power mosgated device and schottky diode
- Patent number 6,476,456
- Issue date Nov 5, 2002
- International Rectifier Corporation
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage mosgated device with trenches to reduce on-resistance
- Patent number 6,452,230
- Issue date Sep 17, 2002
- International Rectifier Corporation
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing radhard power integrated circuit
- Patent number 6,380,004
- Issue date Apr 30, 2002
- International Rectifier Corp.
- Milton John Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOS device and process for radhard device
- Patent number 6,236,099
- Issue date May 22, 2001
- International Rectifier Corp.
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P channel radhard device with boron diffused P-type polysilicon gate
- Patent number 6,165,821
- Issue date Dec 26, 2000
- International Rectifier Corp.
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH MOSGATED DEVICE WITH DEEP TRENCH BETWEEN GATE TRENCHES
- Publication number 20080211016
- Publication date Sep 4, 2008
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P channel Rad Hard MOSFET with enhancement implant
- Publication number 20050227445
- Publication date Oct 13, 2005
- International Rectifier Corporation
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rad Hard MOSFET with graded body diode junction and reduced on resi...
- Publication number 20040183127
- Publication date Sep 23, 2004
- International Rectifier Corporation
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P channel Rad Hard MOSFET with enhancement implant
- Publication number 20040016945
- Publication date Jan 29, 2004
- International Rectifier Corp.
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Alternating implant ring terminations
- Publication number 20030227028
- Publication date Dec 11, 2003
- International Rectifier Corporation
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rad Hard MOSFET with graded body diode junction and reduced on resi...
- Publication number 20030205829
- Publication date Nov 6, 2003
- International Rectifier Corp.
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicide gate process for trench MOSFET
- Publication number 20030168695
- Publication date Sep 11, 2003
- International Rectifier Corp.
- Ritu Sodhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radhard power integrated circuit
- Publication number 20010034094
- Publication date Oct 25, 2001
- International Rectifier Corporation
- Milton John Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOS device and process for radhard device
- Publication number 20010015457
- Publication date Aug 23, 2001
- International Rectifier Corporation
- Milton J. Boden
- H01 - BASIC ELECTRIC ELEMENTS

Milton J. Boden JR.

Person

Patents Grantslast 30 patents

Trench MOSgated device with deep trench between gate trenches

P channel Rad Hard MOSFET with enhancement implant

Alternating implant ring terminations

Trench MOS device and process for radhard device

Rad hard MOSFET with graded body diode junction and reduced on resi...

Low voltage rad hard MOSFET

Integrated radiation hardened power mosgated device and schottky diode

High voltage mosgated device with trenches to reduce on-resistance

Process for manufacturing radhard power integrated circuit

Trench MOS device and process for radhard device

P channel radhard device with boron diffused P-type polysilicon gate

Patents Applicationslast 30 patents

TRENCH MOSGATED DEVICE WITH DEEP TRENCH BETWEEN GATE TRENCHES

P channel Rad Hard MOSFET with enhancement implant

Rad Hard MOSFET with graded body diode junction and reduced on resi...

P channel Rad Hard MOSFET with enhancement implant

Alternating implant ring terminations

Rad Hard MOSFET with graded body diode junction and reduced on resi...

Silicide gate process for trench MOSFET

Radhard power integrated circuit

Trench MOS device and process for radhard device