Ming Cai

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Structure and method to form passive devices in ETSOI process flow
- Patent number 9,570,466
- Issue date Feb 14, 2017
- GLOBALFOUNDRIES Inc.
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating shallow-trench isolation semiconductor devices to reduc...
- Patent number 9,484,402
- Issue date Nov 1, 2016
- GLOBALFOUNDRIES Inc.
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method of varying gate lengths of multiple cores
- Patent number 9,461,040
- Issue date Oct 4, 2016
- QUALCOMM Incorporated
- Ming Cai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Vertical tunnel field effect transistor
- Patent number 9,425,296
- Issue date Aug 23, 2016
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating shallow-trench isolation semiconductor devices to reduc...
- Patent number 9,397,158
- Issue date Jul 19, 2016
- GlobalFoundries Inc.
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high mobility channel
- Patent number 9,245,971
- Issue date Jan 26, 2016
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method of varying gate lengths of multiple cores
- Patent number 9,076,775
- Issue date Jul 7, 2015
- QUALCOMM Incorporated
- Ming Cai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Fabricating shallow-trench isolation semiconductor devices to reduc...
- Patent number 9,059,244
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment for thin body MOSFETs
- Patent number 9,040,399
- Issue date May 26, 2015
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with uniaxial stress channels
- Patent number 8,957,464
- Issue date Feb 17, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of high-performance extremely thin silicon on...
- Patent number 8,927,364
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation recess repair using spacer formation process
- Patent number 8,765,491
- Issue date Jul 1, 2014
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of SMT in replacement gate FINFET process flow
- Patent number 8,697,523
- Issue date Apr 15, 2014
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded stressors for multigate transistor devices
- Patent number 8,658,505
- Issue date Feb 25, 2014
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded stressors for multigate transistor devices
- Patent number 8,659,091
- Issue date Feb 25, 2014
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to form passive devices in ETSOI process flow
- Patent number 8,648,438
- Issue date Feb 11, 2014
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with fully silicided gate
- Patent number 8,643,120
- Issue date Feb 4, 2014
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with uniaxial stress channels
- Patent number 8,633,077
- Issue date Jan 21, 2014
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
finFET with fully silicided gate
- Patent number 8,530,315
- Issue date Sep 10, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor with variable channel thickness for thr...
- Patent number 8,513,131
- Issue date Aug 20, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removal of an overlap of dual stress liners
- Patent number 8,492,218
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile stress enhancement of nitride film for stressed channel fie...
- Patent number 8,470,678
- Issue date Jun 25, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-planarization UV curing of stress inducing layers in replaceme...
- Patent number 8,421,132
- Issue date Apr 16, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced junction leakage and an associate...
- Patent number 8,349,716
- Issue date Jan 8, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR 3D CONCURRENT MULTIPLE PARALLEL 2D QUANTUM...
- Publication number 20160013306
- Publication date Jan 14, 2016
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR 3D CONCURRENT MULTIPLE PARALLEL 2D QUANTUM...
- Publication number 20160005849
- Publication date Jan 7, 2016
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD OF VARYING GATE LENGTHS OF MULTIPLE CORES
- Publication number 20150311198
- Publication date Oct 29, 2015
- QUALCOMM Incorporated
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduc...
- Publication number 20150194484
- Publication date Jul 9, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduc...
- Publication number 20150194334
- Publication date Jul 9, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduc...
- Publication number 20150102453
- Publication date Apr 16, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING HIGH MOBILITY CHANNEL
- Publication number 20150091060
- Publication date Apr 2, 2015
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNEL FIELD EFFECT TRANSISTOR
- Publication number 20150069458
- Publication date Mar 12, 2015
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD OF VARYING GATE LENGTHS OF MULTIPLE CORES
- Publication number 20150061037
- Publication date Mar 5, 2015
- QUALCOMM Incorporated
- Ming Cai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CMOS TECHNOLOGY INTEGRATION
- Publication number 20150001631
- Publication date Jan 1, 2015
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF HIGH-PERFORMANCE EXTREMELY THIN SILICON ON...
- Publication number 20150001625
- Publication date Jan 1, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method to Form Passive Devices in ETSOI Process Flow
- Publication number 20140131802
- Publication date May 15, 2014
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH UNIAXIAL STRESS CHANNELS
- Publication number 20140124861
- Publication date May 8, 2014
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING
- Publication number 20130328135
- Publication date Dec 12, 2013
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING
- Publication number 20130330899
- Publication date Dec 12, 2013
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR WITH VARIABLE CHANNEL THICKNESS FOR THR...
- Publication number 20130285156
- Publication date Oct 31, 2013
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF HIGH-PERFORMANCE EXTREMELY THIN SILICON ON...
- Publication number 20130264653
- Publication date Oct 10, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH UNIAXIAL STRESS CHANNELS
- Publication number 20130207194
- Publication date Aug 15, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of SMT in Replacement Gate FINFET Process Flow
- Publication number 20130200468
- Publication date Aug 8, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH FULLY SILICIDED GATE
- Publication number 20130175620
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF CONTACT RESISTANCE AND JUNCTION LEAKAGE
- Publication number 20130175632
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Ming CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH FULLY SILICIDED GATE
- Publication number 20130178020
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED STRESSORS FOR MULTIGATE TRANSISTOR DEVICES
- Publication number 20130154029
- Publication date Jun 20, 2013
- International Business Machines Corporation
- MING CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED STRESSORS FOR MULTIGATE TRANSISTOR DEVICES
- Publication number 20130154001
- Publication date Jun 20, 2013
- International Business Machines Corporation
- MING CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment For Thin Body Mosfets
- Publication number 20130105896
- Publication date May 2, 2013
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT FOR THIN BODY MOSFETS
- Publication number 20130105894
- Publication date May 2, 2013
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method to Form Passive Devices in ETSOI Process Flow
- Publication number 20130082348
- Publication date Apr 4, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single Liner Process to Achieve Dual Stress
- Publication number 20130029488
- Publication date Jan 31, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post-Silicide Process and Structure For Stressed Liner Integration
- Publication number 20120292670
- Publication date Nov 22, 2012
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRESERVING STRESS BENEFITS OF UV CURING IN REPLACEMENT GATE TRANSIS...
- Publication number 20120286375
- Publication date Nov 15, 2012
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Structure and method to form passive devices in ETSOI process flow

Fabricating shallow-trench isolation semiconductor devices to reduc...

System and method of varying gate lengths of multiple cores

Vertical tunnel field effect transistor

Fabricating shallow-trench isolation semiconductor devices to reduc...

Semiconductor device having high mobility channel

System and method of varying gate lengths of multiple cores

Fabricating shallow-trench isolation semiconductor devices to reduc...

Threshold voltage adjustment for thin body MOSFETs

Transistors with uniaxial stress channels

Structure and method of high-performance extremely thin silicon on...

Shallow trench isolation recess repair using spacer formation process

Integration of SMT in replacement gate FINFET process flow

Embedded stressors for multigate transistor devices

Embedded stressors for multigate transistor devices

Structure and method to form passive devices in ETSOI process flow

FinFET with fully silicided gate

Transistors with uniaxial stress channels

finFET with fully silicided gate

Fin field effect transistor with variable channel thickness for thr...

Removal of an overlap of dual stress liners

Tensile stress enhancement of nitride film for stressed channel fie...

Post-planarization UV curing of stress inducing layers in replaceme...

Semiconductor device with reduced junction leakage and an associate...

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR 3D CONCURRENT MULTIPLE PARALLEL 2D QUANTUM...

METHOD AND APPARATUS FOR 3D CONCURRENT MULTIPLE PARALLEL 2D QUANTUM...

SYSTEM AND METHOD OF VARYING GATE LENGTHS OF MULTIPLE CORES

Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduc...

Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduc...

Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduc...

SEMICONDUCTOR DEVICE HAVING HIGH MOBILITY CHANNEL

VERTICAL TUNNEL FIELD EFFECT TRANSISTOR

SYSTEM AND METHOD OF VARYING GATE LENGTHS OF MULTIPLE CORES

CMOS TECHNOLOGY INTEGRATION

STRUCTURE AND METHOD OF HIGH-PERFORMANCE EXTREMELY THIN SILICON ON...

Structure and Method to Form Passive Devices in ETSOI Process Flow

TRANSISTORS WITH UNIAXIAL STRESS CHANNELS

PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING

PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING

FIN FIELD EFFECT TRANSISTOR WITH VARIABLE CHANNEL THICKNESS FOR THR...

STRUCTURE AND METHOD OF HIGH-PERFORMANCE EXTREMELY THIN SILICON ON...

TRANSISTORS WITH UNIAXIAL STRESS CHANNELS

Integration of SMT in Replacement Gate FINFET Process Flow

FINFET WITH FULLY SILICIDED GATE

REDUCTION OF CONTACT RESISTANCE AND JUNCTION LEAKAGE

FINFET WITH FULLY SILICIDED GATE

EMBEDDED STRESSORS FOR MULTIGATE TRANSISTOR DEVICES

EMBEDDED STRESSORS FOR MULTIGATE TRANSISTOR DEVICES

Threshold Voltage Adjustment For Thin Body Mosfets

THRESHOLD VOLTAGE ADJUSTMENT FOR THIN BODY MOSFETS

Structure and Method to Form Passive Devices in ETSOI Process Flow

Single Liner Process to Achieve Dual Stress

Post-Silicide Process and Structure For Stressed Liner Integration

PRESERVING STRESS BENEFITS OF UV CURING IN REPLACEMENT GATE TRANSIS...