Ming-Yen Li

Person

Fongshan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making planar-type bottom electrode for semiconductor device
- Patent number 7,919,384
- Issue date Apr 5, 2011
- ProMos Technologies Inc.
- Hsiao-Che Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed channel transistor and method for preparing the same
- Patent number 7,781,830
- Issue date Aug 24, 2010
- ProMos Technologies Inc.
- Hsiao Che Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RECESSED CHANNEL TRANSISTOR AND METHOD FOR PREPARING THE SAME
- Publication number 20100013004
- Publication date Jan 21, 2010
- ProMOS Technologies Inc.
- HSIAO CHE WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION APPARATUS AND METHOD FOR PREPARING METAL OX...
- Publication number 20090317982
- Publication date Dec 24, 2009
- ProMOS Technologies Inc.
- Ming Yen Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING TRENCH ISOLATION STRUCTURES AND SEMICONDUCTOR DEV...
- Publication number 20090189246
- Publication date Jul 30, 2009
- Hsiao-Che WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING MICRO-PATTERNS
- Publication number 20090061635
- Publication date Mar 5, 2009
- ProMos Technologies Inc.
- Hsiao-Che Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING METHOD FOR SILICON ON INSULATOR AND STRUCTURE THEREOF
- Publication number 20090039428
- Publication date Feb 12, 2009
- ProMos Technologies Inc.
- Hsiao-Che Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION METHOD OF ACTIVE AREA FOR SEMICONDUCTOR DEVICE
- Publication number 20090023268
- Publication date Jan 22, 2009
- ProMos Technologies Inc.
- Hsiao-Che Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING PLANAR-TYPE BOTTOM ELECTRODE FOR SEMICONDUCTOR DEVICE
- Publication number 20090023264
- Publication date Jan 22, 2009
- ProMos Technologies Inc.
- Hsiao-Che Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitors and methods for fabricating the same
- Publication number 20080316674
- Publication date Dec 25, 2008
- ProMos Technologies Inc.
- Hsiao-Che Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improving atomic layer deposition performance and appara...
- Publication number 20080199614
- Publication date Aug 21, 2008
- ProMos Technologies Inc.
- Ming-Yen Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Ming-Yen Li

Person

Patents Grantslast 30 patents

Method of making planar-type bottom electrode for semiconductor device

Recessed channel transistor and method for preparing the same

Patents Applicationslast 30 patents

RECESSED CHANNEL TRANSISTOR AND METHOD FOR PREPARING THE SAME

ATOMIC LAYER DEPOSITION APPARATUS AND METHOD FOR PREPARING METAL OX...

METHOD OF FORMING TRENCH ISOLATION STRUCTURES AND SEMICONDUCTOR DEV...

METHOD FOR FORMING MICRO-PATTERNS

FABRICATING METHOD FOR SILICON ON INSULATOR AND STRUCTURE THEREOF

ISOLATION METHOD OF ACTIVE AREA FOR SEMICONDUCTOR DEVICE

METHOD OF MAKING PLANAR-TYPE BOTTOM ELECTRODE FOR SEMICONDUCTOR DEVICE

Capacitors and methods for fabricating the same

Method for improving atomic layer deposition performance and appara...