Membership
Tour
Register
Log in
Mo-Chiun Yu
Follow
Person
Taipei, TW
People
Overview
Industries
Organizations
People
Information
Impact
Patents Grants
last 30 patents
Information
Patent Grant
Method of generating multiple oxides by plasma nitridation on oxide
Patent number
7,138,317
Issue date
Nov 21, 2006
Taiwan Semiconductor Manufacturing Company, Ltd.
Chia-Lin Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of generating multiple oxides by plasma nitridation on oxide
Patent number
7,118,974
Issue date
Oct 10, 2006
Taiwan Semiconductor Manufacturing Company, Ltd.
Chia-Lin Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Use of fluorine implantation to form a charge balanced nitrided gat...
Patent number
6,825,133
Issue date
Nov 30, 2004
Taiwan Semiconductor Manufacturing Company, Ltd.
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Etching process for high-k gate dielectrics
Patent number
6,818,553
Issue date
Nov 16, 2004
Taiwan Semiconductor Manufacturing Company, Ltd.
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming a silicon nitride-silicon dioxide gate stack
Patent number
6,767,847
Issue date
Jul 27, 2004
Taiwan Semiconductor Manufacturing Company
Chien-Ming Hu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Thermal compensation method for forming semiconductor integrated ci...
Patent number
6,764,959
Issue date
Jul 20, 2004
Taiwan Semiconductor Manufacturing Co., Ltd
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of generating multiple oxides by plasma nitridation on oxide
Patent number
6,759,302
Issue date
Jul 6, 2004
Taiwan Semiconductor Manufacturing Company
Chia-Lin Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming an STI feature while avoiding or reducing divot f...
Patent number
6,689,665
Issue date
Feb 10, 2004
Taiwan Semiconductor Manufacturing, Co., Ltd.
Syun-Ming Jang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for ultra-thin gate oxide growth
Patent number
6,649,535
Issue date
Nov 18, 2003
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming plasma nitrided gate dielectric layers
Patent number
6,624,090
Issue date
Sep 23, 2003
Taiwan Semiconductor Manufacturing Company
Mo Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Ozone-enhanced oxidation for high-k dielectric semiconductor devices
Patent number
6,573,193
Issue date
Jun 3, 2003
Taiwan Semiconductor Manufacturing Co., Ltd
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method to neutralize fixed charges in high K dielectric
Patent number
6,566,205
Issue date
May 20, 2003
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for making FET gate oxides with different thicknesses using...
Patent number
6,511,887
Issue date
Jan 28, 2003
Taiwan Semiconductor Manufacturing Computer
Mo-chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Methods of forming high-k gate dielectrics and I/O gate oxides for...
Patent number
6,495,422
Issue date
Dec 17, 2002
Taiwan Semiconductor Manfacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for forming semiconductor integrated circuit microelectronic...
Patent number
6,465,323
Issue date
Oct 15, 2002
Taiwan Semiconductor Manufacturing Co., Ltd
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for forming composite gate dielectric layer equivalent to si...
Patent number
6,380,104
Issue date
Apr 30, 2002
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for reducing gate oxide effective thickness and leakage current
Patent number
6,362,085
Issue date
Mar 26, 2002
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for making silicon nitride-oxide ultra-thin gate insulating...
Patent number
6,323,143
Issue date
Nov 27, 2001
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Using high temperature H2 anneal to recrystallize S/D and remove na...
Patent number
6,319,784
Issue date
Nov 20, 2001
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Pre-oxidation cleaning method for reducing leakage current of ultra...
Patent number
6,232,241
Issue date
May 15, 2001
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of generating multiple oxide thicknesses by one oxidation st...
Patent number
6,225,167
Issue date
May 1, 2001
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Using H2anneal to improve the electrical characteristics of gate oxide
Patent number
6,204,205
Issue date
Mar 20, 2001
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for forming a ultra-thin gate insulator layer
Patent number
6,184,155
Issue date
Feb 6, 2001
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of generating two nitrogen concentration peak profiles in ga...
Patent number
6,180,543
Issue date
Jan 30, 2001
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for forming dual gate oxides on integrated circuits with adv...
Patent number
6,171,911
Issue date
Jan 9, 2001
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Using NO or N.sub.2 O treatment to generate different oxide thickne...
Patent number
6,110,780
Issue date
Aug 29, 2000
Taiwan Semiconductor Manufacturing Company
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Etching process for high-k gate dielectrics
Publication number
20050042859
Publication date
Feb 24, 2005
Taiwan Semiconductor Manufacturing Company, Ltd.
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of generating multiple oxides by plasma nitridation on oxide
Publication number
20040214398
Publication date
Oct 28, 2004
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
Chia-Lin Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of generating multiple oxides by plasma nitridation on oxide
Publication number
20040198000
Publication date
Oct 7, 2004
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
Chia-Lin Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of generating multiple oxides by plasma nitridation on oxide
Publication number
20040198001
Publication date
Oct 7, 2004
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
Chia-Lin Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of generating multiple oxides by plasma nitridation on oxide
Publication number
20040195637
Publication date
Oct 7, 2004
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
Chia-Lin Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Use of fluorine implantation to form a charge balanced nitrided gat...
Publication number
20040142518
Publication date
Jul 22, 2004
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Ozone-enhanced oxidation for high-k dielectric semiconductor devices
Publication number
20030032303
Publication date
Feb 13, 2003
Taiwan Semiconductor Manufacturing Co., Ltd.
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Thermal compensation method for forming semiconductor integrated ci...
Publication number
20030027391
Publication date
Feb 6, 2003
Taiwan Semiconductor Manufacturing Co., Ltd.
Mo-Chiun Yu
H01 - BASIC ELECTRIC ELEMENTS