Monir El-Diwany

Person

Saratoga, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned bipolar transistor structure
- Patent number 8,148,799
- Issue date Apr 3, 2012
- National Semiconductor Corporation
- Monir El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a self-aligned bipolar transistor structure using...
- Patent number 7,687,887
- Issue date Mar 30, 2010
- National Semiconductor Corporation
- Monir El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage mos device having an extended drain region with differ...
- Patent number 6,091,111
- Issue date Jul 18, 2000
- National Semiconductor Corporation
- Esin Kutlu Demirlioglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming low-voltage CMOS transistors with a thin layer o...
- Patent number 5,953,599
- Issue date Sep 14, 1999
- National Semiconductor Corporation
- Monir El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-implantation of arsenic and phosphorus in extended drain region...
- Patent number 5,893,742
- Issue date Apr 13, 1999
- National Semiconductor Corporation
- Esin Kutlu Demirlioglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extension regions in low voltage lateral DMOS devices
- Patent number 5,846,866
- Issue date Dec 8, 1998
- National Semiconductor Corporation
- Robert Y. S. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a high speed bipolar transistor in a CMOS p...
- Patent number 5,766,990
- Issue date Jun 16, 1998
- National Semiconductor Corporation
- Monir El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a polysilicon emitter and a polysilicon gat...
- Patent number 5,179,031
- Issue date Jan 12, 1993
- National Semiconductor Corporation
- Michael P. Brassington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon emitter and a polysilicon gate using the same etch of p...
- Patent number 5,124,817
- Issue date Jun 23, 1992
- National Semiconductor Corporation
- Michael P. Brassington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of polysilicon layer for local interconnect in a CMOS or BiCMOS...
- Patent number 5,082,796
- Issue date Jan 21, 1992
- National Semiconductor Corporation
- Monir H. El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of a polysilicon layer for local interconnect in a CMOS or BICM...
- Patent number 5,081,518
- Issue date Jan 14, 1992
- National Semiconductor Corporation
- Monir H. El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a polysilicon emitter and a polysilicon gat...
- Patent number 5,001,081
- Issue date Mar 19, 1991
- National Semiconductor Corp.
- Prateep Tuntasood
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED BIPOLAR TRANSISTOR STRUCTURE
- Publication number 20100127352
- Publication date May 27, 2010
- National Semiconductor Corporation
- Monir El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS

Monir El-Diwany

Person

Patents Grantslast 30 patents

Self-aligned bipolar transistor structure

Method of forming a self-aligned bipolar transistor structure using...

High voltage mos device having an extended drain region with differ...

Method for forming low-voltage CMOS transistors with a thin layer o...

Co-implantation of arsenic and phosphorus in extended drain region...

Drain extension regions in low voltage lateral DMOS devices

Method of manufacturing a high speed bipolar transistor in a CMOS p...

Method of manufacturing a polysilicon emitter and a polysilicon gat...

Polysilicon emitter and a polysilicon gate using the same etch of p...

Use of polysilicon layer for local interconnect in a CMOS or BiCMOS...

Use of a polysilicon layer for local interconnect in a CMOS or BICM...

Method of manufacturing a polysilicon emitter and a polysilicon gat...

Patents Applicationslast 30 patents

SELF-ALIGNED BIPOLAR TRANSISTOR STRUCTURE