Mrinal K. Das

Person

Durham, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
High speed, efficient SiC power module
- Patent number 12,046,998
- Issue date Jul 23, 2024
- Wolfspeed, Inc.
- Mrinal K. Das
- B60 - VEHICLES IN GENERAL
Information Patent Grant
High speed, efficient sic power module
- Patent number 11,888,392
- Issue date Jan 30, 2024
- Wolfspeed, Inc.
- Mrinal K. Das
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Low switching loss high performance power module
- Patent number 11,171,229
- Issue date Nov 9, 2021
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power module with improved reliability
- Patent number 10,707,858
- Issue date Jul 7, 2020
- Cree, Inc.
- Mrinal K. Das
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
High speed, efficient SiC power module
- Patent number 10,680,518
- Issue date Jun 9, 2020
- Cree, Inc.
- Mrinal K. Das
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Low loss electronic devices having increased doping for reduced res...
- Patent number 10,181,532
- Issue date Jan 15, 2019
- Cree, Inc.
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High current, low switching loss SiC power module
- Patent number 10,141,302
- Issue date Nov 27, 2018
- Cree, Inc.
- Mrinal K. Das
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Power module with improved reliability
- Patent number 9,998,109
- Issue date Jun 12, 2018
- Cree, Inc.
- Mrinal K. Das
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High performance power module
- Patent number 9,640,617
- Issue date May 2, 2017
- Cree, Inc.
- Mrinal K. Das
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Silicon carbide switching devices including P-type channels
- Patent number 9,552,997
- Issue date Jan 24, 2017
- Cree, Inc.
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power silicon carbide (SiC) PiN diodes having low forward volt...
- Patent number 9,455,356
- Issue date Sep 27, 2016
- Cree, Inc.
- Mrinal Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High current, low switching loss SiC power module
- Patent number 9,373,617
- Issue date Jun 21, 2016
- Cree, Inc.
- Mrinal K. Das
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Silicon carbide devices having smooth channels
- Patent number 9,142,663
- Issue date Sep 22, 2015
- Cree, Inc.
- Mrinal K. Das
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide power devices including P-type epitaxial layers and...
- Patent number 8,866,150
- Issue date Oct 21, 2014
- Cree, Inc.
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating silicon carbide devices having smooth channels
- Patent number 8,859,366
- Issue date Oct 14, 2014
- Cree, Inc.
- Mrinal K. Das
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing silicon carbide crystals having increased min...
- Patent number 8,618,553
- Issue date Dec 31, 2013
- Cree, Inc.
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of forming SiC MOSFETs with high inversion layer mobility
- Patent number 8,536,066
- Issue date Sep 17, 2013
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide devices having smooth channels
- Patent number 8,188,483
- Issue date May 29, 2012
- Cree, Inc.
- Mrinal K. Das
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of fabricating oxide layers on silicon carbide layers utili...
- Patent number 8,119,539
- Issue date Feb 21, 2012
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming silicon carbide switching devices including P-ty...
- Patent number 7,883,949
- Issue date Feb 8, 2011
- Cree, Inc.
- Mrinal Kanti Das
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing silicon carbide crystals having increased min...
- Patent number 7,811,943
- Issue date Oct 12, 2010
- Cree, Inc.
- Calvin H. Carter, Jr.
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of forming SiC MOSFETs with high inversion layer mobility
- Patent number 7,727,904
- Issue date Jun 1, 2010
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide devices with hybrid well regions
- Patent number 7,705,362
- Issue date Apr 27, 2010
- Cree, Inc.
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage silicon carbide devices having bi-directional blocking...
- Patent number 7,615,801
- Issue date Nov 10, 2009
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating oxide layers on silicon carbide layers utili...
- Patent number 7,572,741
- Issue date Aug 11, 2009
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating silicon carbide devices having smooth channels
- Patent number 7,528,040
- Issue date May 5, 2009
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage silicon carbide MOS-bipolar devices having bi-directio...
- Patent number 7,414,268
- Issue date Aug 19, 2008
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage silicon carbide devices having bi-directional blocking...
- Patent number 7,391,057
- Issue date Jun 24, 2008
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating silicon carbide devices with hybrid well reg...
- Patent number 7,118,970
- Issue date Oct 10, 2006
- Cree, Inc.
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an oxide layer on a silicon carbide layer uti...
- Patent number 7,067,176
- Issue date Jun 27, 2006
- Cree, Inc.
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH SPEED, EFFICIENT SIC POWER MODULE
- Publication number 20240380320
- Publication date Nov 14, 2024
- Wolfspeed, Inc.
- Mrinal K. DAS
- B60 - VEHICLES IN GENERAL
Information Patent Application
HIGH SPEED, EFFICIENT SIC POWER MODULE
- Publication number 20200244164
- Publication date Jul 30, 2020
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SPEED, EFFICIENT SIC POWER MODULE
- Publication number 20200177079
- Publication date Jun 4, 2020
- Cree, Inc.
- Mrinal K. Das
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
POWER MODULE WITH IMPROVED RELIABILITY
- Publication number 20180331679
- Publication date Nov 15, 2018
- Cree, Inc.
- Mrinal K. Das
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
HIGH PERFORMANCE POWER MODULE
- Publication number 20170213811
- Publication date Jul 27, 2017
- Cree, Inc.
- Mrinal K. Das
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
HIGH SPEED, EFFICIENT SIC POWER MODULE
- Publication number 20160276927
- Publication date Sep 22, 2016
- Cree, Inc.
- Mrinal K. Das
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE
- Publication number 20160204101
- Publication date Jul 14, 2016
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Devices Having Smooth Channels
- Publication number 20150028354
- Publication date Jan 29, 2015
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Loss Electronic Devices Having Increased Doping for Reduced Res...
- Publication number 20140266403
- Publication date Sep 18, 2014
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE
- Publication number 20140246681
- Publication date Sep 4, 2014
- Cree, Inc.
- Mrinal K. Das
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
HIGH PERFORMANCE POWER MODULE
- Publication number 20130248883
- Publication date Sep 26, 2013
- Cree, Inc.
- Mrinal K. Das
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Methods of Fabricating Silicon Carbide Devices Having Smooth Channe...
- Publication number 20120228638
- Publication date Sep 13, 2012
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Switching Devices Including P-Type Channels
- Publication number 20110121318
- Publication date May 26, 2011
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MIN...
- Publication number 20100320477
- Publication date Dec 23, 2010
- Cree, Inc.
- Calvin H. Carter, JR.
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF FORMING SIC MOSFETS WITH HIGH INVERSION LAYER MOBILITY
- Publication number 20100221924
- Publication date Sep 2, 2010
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Oxide Layers on Silicon Carbide Layers Utili...
- Publication number 20100009545
- Publication date Jan 14, 2010
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Devices Having Smooth Channels
- Publication number 20090261351
- Publication date Oct 22, 2009
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of fabricating oxide layers on silicon carbide layers utili...
- Publication number 20090004883
- Publication date Jan 1, 2009
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SILICON CARBIDE POWER DEVICES BY AT LEAST PA...
- Publication number 20080296771
- Publication date Dec 4, 2008
- Cree, Inc.
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming SIC MOSFETs with high inversion layer mobility
- Publication number 20080233285
- Publication date Sep 25, 2008
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SWITCHING DEVICES INCLUDING P-TYPE CHANNELS AND MET...
- Publication number 20080001158
- Publication date Jan 3, 2008
- Cree, Inc.
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High power silicon carbide (SiC) PiN diodes having low forward volt...
- Publication number 20070200115
- Publication date Aug 30, 2007
- Cree, Inc.
- Mrinal Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide devices with hybrid well regions
- Publication number 20060289874
- Publication date Dec 28, 2006
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of fabricating silicon carbide devices having smooth channels
- Publication number 20060270103
- Publication date Nov 30, 2006
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage silicon carbide devices having bi-directional blocking...
- Publication number 20060261346
- Publication date Nov 23, 2006
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage silicon carbide MOS-bipolar devices having bi-directio...
- Publication number 20060261347
- Publication date Nov 23, 2006
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage silicon carbide devices having bi-directional blocking...
- Publication number 20060261348
- Publication date Nov 23, 2006
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage silicon carbide devices having bi-directional blocking...
- Publication number 20060261345
- Publication date Nov 23, 2006
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing silicon carbide crystals having increased min...
- Publication number 20060130742
- Publication date Jun 22, 2006
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide devices with hybrid well regions and methods of fab...
- Publication number 20050280004
- Publication date Dec 22, 2005
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS

Mrinal K. Das

Person

Patents Grantslast 30 patents

High speed, efficient SiC power module

High speed, efficient sic power module

Low switching loss high performance power module

Power module with improved reliability

High speed, efficient SiC power module

Low loss electronic devices having increased doping for reduced res...

High current, low switching loss SiC power module

Power module with improved reliability

High performance power module

Silicon carbide switching devices including P-type channels

High power silicon carbide (SiC) PiN diodes having low forward volt...

High current, low switching loss SiC power module

Silicon carbide devices having smooth channels

Silicon carbide power devices including P-type epitaxial layers and...

Methods of fabricating silicon carbide devices having smooth channels

Process for producing silicon carbide crystals having increased min...

Methods of forming SiC MOSFETs with high inversion layer mobility

Silicon carbide devices having smooth channels

Methods of fabricating oxide layers on silicon carbide layers utili...

Methods of forming silicon carbide switching devices including P-ty...

Process for producing silicon carbide crystals having increased min...

Methods of forming SiC MOSFETs with high inversion layer mobility

Silicon carbide devices with hybrid well regions

High voltage silicon carbide devices having bi-directional blocking...

Methods of fabricating oxide layers on silicon carbide layers utili...

Methods of fabricating silicon carbide devices having smooth channels

High voltage silicon carbide MOS-bipolar devices having bi-directio...

High voltage silicon carbide devices having bi-directional blocking...

Methods of fabricating silicon carbide devices with hybrid well reg...

Method of fabricating an oxide layer on a silicon carbide layer uti...

Patents Applicationslast 30 patents

HIGH SPEED, EFFICIENT SIC POWER MODULE

HIGH SPEED, EFFICIENT SIC POWER MODULE

HIGH SPEED, EFFICIENT SIC POWER MODULE

POWER MODULE WITH IMPROVED RELIABILITY

HIGH PERFORMANCE POWER MODULE

HIGH SPEED, EFFICIENT SIC POWER MODULE

HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE

Silicon Carbide Devices Having Smooth Channels

Low Loss Electronic Devices Having Increased Doping for Reduced Res...

HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE

HIGH PERFORMANCE POWER MODULE

Methods of Fabricating Silicon Carbide Devices Having Smooth Channe...

Silicon Carbide Switching Devices Including P-Type Channels

PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MIN...

METHODS OF FORMING SIC MOSFETS WITH HIGH INVERSION LAYER MOBILITY

Methods of Fabricating Oxide Layers on Silicon Carbide Layers Utili...

Silicon Carbide Devices Having Smooth Channels

Methods of fabricating oxide layers on silicon carbide layers utili...

METHODS OF FABRICATING SILICON CARBIDE POWER DEVICES BY AT LEAST PA...

Methods of forming SIC MOSFETs with high inversion layer mobility

SILICON CARBIDE SWITCHING DEVICES INCLUDING P-TYPE CHANNELS AND MET...

High power silicon carbide (SiC) PiN diodes having low forward volt...

Silicon carbide devices with hybrid well regions

Methods of fabricating silicon carbide devices having smooth channels

High voltage silicon carbide devices having bi-directional blocking...

High voltage silicon carbide MOS-bipolar devices having bi-directio...

High voltage silicon carbide devices having bi-directional blocking...

High voltage silicon carbide devices having bi-directional blocking...

Process for producing silicon carbide crystals having increased min...

Silicon carbide devices with hybrid well regions and methods of fab...