Muralikrishnan Balakrishnan

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory cells comprising ferroelectric material and including curren...
- Patent number 11,600,691
- Issue date Mar 7, 2023
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated memory having non-ohmic devices and capacitors
- Patent number 11,043,497
- Issue date Jun 22, 2021
- Micron Technology, Inc.
- Pankaj Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells comprising ferroelectric material and including curren...
- Patent number 10,879,344
- Issue date Dec 29, 2020
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a capacitor comprising ferroelectric material an...
- Patent number 10,680,057
- Issue date Jun 9, 2020
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells comprising ferroelectric material and including curren...
- Patent number 10,396,145
- Issue date Aug 27, 2019
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a metal cap in a semiconductor memory device
- Patent number 9,577,192
- Issue date Feb 21, 2017
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory elements, resistive memory cells, and resistive me...
- Patent number 9,419,220
- Issue date Aug 16, 2016
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming resistive memory elements
- Patent number 9,112,138
- Issue date Aug 18, 2015
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED TECHNIQUES FOR FORMING CONNECTIONS IN A MEMORY DEVICE
- Publication number 20240045604
- Publication date Feb 8, 2024
- Micron Technology, Inc.
- Zhuo Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Integrated Memory Having Non-Ohmic Devices and Capacitors
- Publication number 20210265355
- Publication date Aug 26, 2021
- Micron Technology, Inc.
- Pankaj Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Memory having Non-Ohmic Devices and Capacitors
- Publication number 20210193663
- Publication date Jun 24, 2021
- Micron Technology, Inc.
- Pankaj Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells Comprising Ferroelectric Material And Including Curren...
- Publication number 20210104597
- Publication date Apr 8, 2021
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells Comprising Ferroelectric Material And Including Curren...
- Publication number 20200279907
- Publication date Sep 3, 2020
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods Of Forming A Capacitor Comprising Ferroelectric Material An...
- Publication number 20190355803
- Publication date Nov 21, 2019
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells and Methods of Forming a Capacitor
- Publication number 20180197870
- Publication date Jul 12, 2018
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A METAL CAP IN A SEMICONDUCTOR MEMORY DEVICE
- Publication number 20170133585
- Publication date May 11, 2017
- Sony Semiconductor Solutions Corporation
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A METAL CAP IN A SEMICONDUCTOR MEMORY DEVICE
- Publication number 20150340247
- Publication date Nov 26, 2015
- SONY CORPORATION
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY ELEMENTS, RESISTIVE MEMORY CELLS, AND RESISTIVE ME...
- Publication number 20150333257
- Publication date Nov 19, 2015
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH NON-VOLATILE MEMORY AND METHOD OF MA...
- Publication number 20140306172
- Publication date Oct 16, 2014
- SONY CORPORATION
- Scott Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING RESISTIVE MEMORY ELEMENTS AND RELATED RESISTIVE...
- Publication number 20130334483
- Publication date Dec 19, 2013
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS

Muralikrishnan Balakrishnan

Person

Patents Grantslast 30 patents

Memory cells comprising ferroelectric material and including curren...

Integrated memory having non-ohmic devices and capacitors

Memory cells comprising ferroelectric material and including curren...

Methods of forming a capacitor comprising ferroelectric material an...

Memory cells comprising ferroelectric material and including curren...

Method for forming a metal cap in a semiconductor memory device

Resistive memory elements, resistive memory cells, and resistive me...

Methods of forming resistive memory elements

Patents Applicationslast 30 patents

SELF-ALIGNED TECHNIQUES FOR FORMING CONNECTIONS IN A MEMORY DEVICE

Integrated Memory Having Non-Ohmic Devices and Capacitors

Integrated Memory having Non-Ohmic Devices and Capacitors

Memory Cells Comprising Ferroelectric Material And Including Curren...

Memory Cells Comprising Ferroelectric Material And Including Curren...

Methods Of Forming A Capacitor Comprising Ferroelectric Material An...

Memory Cells and Methods of Forming a Capacitor

METHOD FOR FORMING A METAL CAP IN A SEMICONDUCTOR MEMORY DEVICE

METHOD FOR FORMING A METAL CAP IN A SEMICONDUCTOR MEMORY DEVICE

RESISTIVE MEMORY ELEMENTS, RESISTIVE MEMORY CELLS, AND RESISTIVE ME...

INTEGRATED CIRCUIT SYSTEM WITH NON-VOLATILE MEMORY AND METHOD OF MA...

METHODS OF FORMING RESISTIVE MEMORY ELEMENTS AND RELATED RESISTIVE...