Naohisa Iino

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile semiconductor memory and method for fabricating a non-...
- Patent number 7,750,417
- Issue date Jul 6, 2010
- Kabushiki Kaisha Toshiba
- Naohisa Iino
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory device having a two-layer gate el...
- Patent number 7,508,026
- Issue date Mar 24, 2009
- Kabushiki Kaisha Toshiba
- Naohisa Iino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device capable of controlling prox...
- Patent number 7,505,312
- Issue date Mar 17, 2009
- Kabushiki Kaisha Toshiba
- Yasuhiko Matsunaga
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 7,292,474
- Issue date Nov 6, 2007
- Kabushiki Kaisha Toshiba
- Naohisa Iino
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory and a fabrication method for the same
- Patent number 7,268,386
- Issue date Sep 11, 2007
- Kabushiki Kaisha Toshiba
- Naohisa Iino
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE SEMICONDUCTOR MEMORY AND METHOD FOR FABRICATING A NON-...
- Publication number 20080169497
- Publication date Jul 17, 2008
- Kabushiki Kaisha Toshiba
- Naohisa Iino
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor integrated circuit device
- Publication number 20070180219
- Publication date Aug 2, 2007
- Naohisa Iino
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor integrated circuit device
- Publication number 20070177431
- Publication date Aug 2, 2007
- Yasuhiko Matsunaga
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY AND FABRICATION METHOD FOR THE SAME
- Publication number 20070128815
- Publication date Jun 7, 2007
- Kabushiki Kaisha Toshiba
- Naohisa Iino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile semiconductor memory device having a two-layer gate el...
- Publication number 20060278916
- Publication date Dec 14, 2006
- Naohisa Iino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile semiconductor memory and method for fabricating a non-...
- Publication number 20060049449
- Publication date Mar 9, 2006
- Kabushiki Kaisha Toshiba
- Naohisa Iino
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile semiconductor memory and a fabrication method for the same
- Publication number 20050224862
- Publication date Oct 13, 2005
- Kabushiki Kaisha Toshiba
- Naohisa Iino
- H01 - BASIC ELECTRIC ELEMENTS

Naohisa Iino

Person

Patents Grantslast 30 patents

Non-volatile semiconductor memory and method for fabricating a non-...

Non-volatile semiconductor memory device having a two-layer gate el...

Nonvolatile semiconductor memory device capable of controlling prox...

Semiconductor integrated circuit device

Nonvolatile semiconductor memory and a fabrication method for the same

Patents Applicationslast 30 patents

NON-VOLATILE SEMICONDUCTOR MEMORY AND METHOD FOR FABRICATING A NON-...

Semiconductor integrated circuit device

Semiconductor integrated circuit device

NONVOLATILE SEMICONDUCTOR MEMORY AND FABRICATION METHOD FOR THE SAME

Non-volatile semiconductor memory device having a two-layer gate el...

Non-volatile semiconductor memory and method for fabricating a non-...

Nonvolatile semiconductor memory and a fabrication method for the same