Naoki Takeguchi

Person

Nagoya, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Three dimensional memory device and method of making thereof by for...
- Patent number 12,185,540
- Issue date Dec 31, 2024
- SanDisk Technologies LLC
- Michiaki Sano
Information Patent Grant
Methods and apparatuses for forming semiconductor devices containin...
- Patent number 12,176,203
- Issue date Dec 24, 2024
- SanDisk Technologies LLC
- Fei Zhou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Three-dimensional memory device and method of making thereof using...
- Patent number 12,046,285
- Issue date Jul 23, 2024
- SanDisk Technologies LLC
- Naoki Takeguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and method of making thereof using...
- Patent number 11,942,429
- Issue date Mar 26, 2024
- SanDisk Technologies LLC
- Tatsuya Hinoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluorine-free tungsten deposition process employing in-situ oxidati...
- Patent number 11,377,733
- Issue date Jul 5, 2022
- SanDisk Technologies LLC
- Fei Zhou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Three-dimensional memory device including electrically conductive l...
- Patent number 10,916,504
- Issue date Feb 9, 2021
- SanDisk Technologies LLC
- Yusuke Mukae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing replacement contact via...
- Patent number 10,608,010
- Issue date Mar 31, 2020
- SanDisk Technologies LLC
- Yujin Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective tungsten growth for word lines of a three-dimensional mem...
- Patent number 10,381,372
- Issue date Aug 13, 2019
- SanDisk Technologies LLC
- Fumitaka Amano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt-containing conductive layers for control gate electrodes in...
- Patent number 10,128,261
- Issue date Nov 13, 2018
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating memory array having divided apart bit lines a...
- Patent number 9,887,240
- Issue date Feb 6, 2018
- SanDisk Technologies LLC
- Seiji Shimabukuro
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical thin film transistors in non-volatile storage systems
- Patent number 9,818,798
- Issue date Nov 14, 2017
- SanDisk Technologies LLC
- Naoki Takeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Set of stepped surfaces formation for a multilevel interconnect str...
- Patent number 9,728,499
- Issue date Aug 8, 2017
- SanDisk Technologies LLC
- Seiji Shimabukuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating memory array having divided apart bit lines and...
- Patent number 9,608,043
- Issue date Mar 28, 2017
- SanDisk Technologies LLC
- Seiji Shimabukuro
- G11 - INFORMATION STORAGE
Information Patent Grant
Blocking oxide in memory opening integration scheme for three-dimen...
- Patent number 9,601,508
- Issue date Mar 21, 2017
- SanDisk Technologies LLC
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate and process for making transistor gate
- Patent number 9,401,279
- Issue date Jul 26, 2016
- SanDisk Technologies LLC
- Naoki Takeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thin film transistors in non-volatile storage systems
- Patent number 9,362,338
- Issue date Jun 7, 2016
- SanDisk Technologies Inc.
- Naoki Takeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array having divided apart bit lines and partially divided b...
- Patent number 9,356,074
- Issue date May 31, 2016
- SanDisk Technologies Inc.
- Seiji Shimabukuro
- G11 - INFORMATION STORAGE
Information Patent Grant
Air gap formation between bit lines with side protection
- Patent number 9,337,085
- Issue date May 10, 2016
- SanDisk Technologies Inc.
- Jong Sun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation between bit lines with top protection
- Patent number 9,330,969
- Issue date May 3, 2016
- SanDisk Technologies Inc.
- Jong Sun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory device having comb-shaped source electrode...
- Patent number 9,230,984
- Issue date Jan 5, 2016
- SanDisk Technologies Inc.
- Naoki Takeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate ultrahigh density vertical NAND flash memory
- Patent number 9,159,739
- Issue date Oct 13, 2015
- SanDisk Technologies Inc.
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming metal wire
- Patent number 8,835,248
- Issue date Sep 16, 2014
- SanDisk Technologies Inc.
- Naoki Takeguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING COAXIAL DOUBLE CONTACT VI...
- Publication number 20240306392
- Publication date Sep 12, 2024
- SANDISK TECHNOLOGIES LLC
- Ryo MIZUTSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUSES FOR FORMING SEMICONDUCTOR DEVICES CONTAININ...
- Publication number 20230223248
- Publication date Jul 13, 2023
- SANDISK TECHNOLOGIES LLC
- Fei ZHOU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND APPARATUSES FOR FORMING SEMICONDUCTOR DEVICES CONTAININ...
- Publication number 20230223266
- Publication date Jul 13, 2023
- SANDISK TECHNOLOGIES LLC
- Fei ZHOU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND APPARATUSES FOR FORMING SEMICONDUCTOR DEVICES CONTAININ...
- Publication number 20230223267
- Publication date Jul 13, 2023
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...
- Publication number 20220406720
- Publication date Dec 22, 2022
- SANDISK TECHNOLOGIES LLC
- Tatsuya HINOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...
- Publication number 20220406793
- Publication date Dec 22, 2022
- SANDISK TECHNOLOGIES LLC
- Naoki TAKEGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...
- Publication number 20220406794
- Publication date Dec 22, 2022
- SANDISK TECHNOLOGIES LLC
- Tatsuya HINOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...
- Publication number 20220406379
- Publication date Dec 22, 2022
- SANDISK TECHNOLOGIES LLC
- Naoki TAKEGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FOR...
- Publication number 20220352200
- Publication date Nov 3, 2022
- SANDISK TECHNOLOGIES LLC
- Michiaki SANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FOR...
- Publication number 20220352199
- Publication date Nov 3, 2022
- SANDISK TECHNOLOGIES LLC
- Yusuke MUKAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLUORINE-FREE TUNGSTEN DEPOSITION PROCESS EMPLOYING IN-SITU OXIDATI...
- Publication number 20220042171
- Publication date Feb 10, 2022
- SANDISK TECHNOLOGIES LLC
- Fei ZHOU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING ELECTRICALLY CONDUCTIVE L...
- Publication number 20200395310
- Publication date Dec 17, 2020
- SANDISK TECHNOLOGIES LLC
- Yusuke MUKAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING REPLACEMENT CONTACT VIA...
- Publication number 20190280001
- Publication date Sep 12, 2019
- SANDISK TECHNOLOGIES LLC
- Yujin TERASAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE TUNGSTEN GROWTH FOR WORD LINES OF A THREE-DIMENSIONAL MEM...
- Publication number 20180019256
- Publication date Jan 18, 2018
- SanDisk Technologies LLC
- Fumitaka AMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN...
- Publication number 20170287925
- Publication date Oct 5, 2017
- SANDISK TECHNOLOGIES INC.
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE CHAMBER MULTI-PARTITION DEPOSITION TOOL AND METHOD OF OPERAT...
- Publication number 20170247794
- Publication date Aug 31, 2017
- SanDisk Technologies LLC
- Yusuke MUKAE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FABRICATING MEMORY ARRAY HAVING DIVIDED APART BIT LINES A...
- Publication number 20170154925
- Publication date Jun 1, 2017
- SanDisk Technologies LLC
- Seiji Shimabukuro
- G11 - INFORMATION STORAGE
Information Patent Application
BLOCKING OXIDE IN MEMORY OPENING INTEGRATION SCHEME FOR THREE-DIMEN...
- Publication number 20160315095
- Publication date Oct 27, 2016
- SANDISK TECHNOLOGIES INC.
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Thin Film Transistors In Non-Volatile Storage Systems
- Publication number 20160284765
- Publication date Sep 29, 2016
- SanDisk Technologies LLC
- Naoki Takeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF OPERATING MEMORY ARRAY HAVING DIVIDED APART BIT LINES AND...
- Publication number 20160268340
- Publication date Sep 15, 2016
- SanDisk Technologies LLC
- Seiji Shimabukuro
- G11 - INFORMATION STORAGE
Information Patent Application
SET OF STEPPED SURFACES FORMATION FOR A MULTILEVEL INTERCONNECT STR...
- Publication number 20160148835
- Publication date May 26, 2016
- SanDisk Technologies, Inc.
- Seiji SHIMABUKURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY HAVING DIVIDED APART BIT LINES AND PARTIALLY DIVIDED B...
- Publication number 20160141337
- Publication date May 19, 2016
- SanDisk 3D LLC
- Sejei Shimabukuro
- G11 - INFORMATION STORAGE
Information Patent Application
Vertical Thin Film Transistors In Non-Volatile Storage Systems
- Publication number 20150249112
- Publication date Sep 3, 2015
- SanDisk 3D LLC
- Naoki Takeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Gap Formation Between Bit Lines with Top Protection
- Publication number 20150228532
- Publication date Aug 13, 2015
- SANDISK TECHNOLOGIES INC.
- Jong Sun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Gap Formation Between Bit Lines with Side Protection
- Publication number 20150228582
- Publication date Aug 13, 2015
- SANDISK TECHNOLOGIES INC.
- Jong Sun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN...
- Publication number 20150179662
- Publication date Jun 25, 2015
- SANDISK TECHNOLOGIES INC.
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING GATE ULTRAHIGH DENSITY VERTICAL NAND FLASH MEMORY AND METH...
- Publication number 20140353738
- Publication date Dec 4, 2014
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING METAL WIRE
- Publication number 20130316531
- Publication date Nov 28, 2013
- Naoki Takeguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Naoki Takeguchi

Person

Patents Grantslast 30 patents

Three dimensional memory device and method of making thereof by for...

Methods and apparatuses for forming semiconductor devices containin...

Three-dimensional memory device and method of making thereof using...

Three-dimensional memory device and method of making thereof using...

Fluorine-free tungsten deposition process employing in-situ oxidati...

Three-dimensional memory device including electrically conductive l...

Three-dimensional memory device containing replacement contact via...

Selective tungsten growth for word lines of a three-dimensional mem...

Cobalt-containing conductive layers for control gate electrodes in...

Method of fabricating memory array having divided apart bit lines a...

Vertical thin film transistors in non-volatile storage systems

Set of stepped surfaces formation for a multilevel interconnect str...

Method of operating memory array having divided apart bit lines and...

Blocking oxide in memory opening integration scheme for three-dimen...

Transistor gate and process for making transistor gate

Vertical thin film transistors in non-volatile storage systems

Memory array having divided apart bit lines and partially divided b...

Air gap formation between bit lines with side protection

Air gap formation between bit lines with top protection

Three dimensional memory device having comb-shaped source electrode...

Floating gate ultrahigh density vertical NAND flash memory

Method for forming metal wire

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING COAXIAL DOUBLE CONTACT VI...

METHODS AND APPARATUSES FOR FORMING SEMICONDUCTOR DEVICES CONTAININ...

METHODS AND APPARATUSES FOR FORMING SEMICONDUCTOR DEVICES CONTAININ...

METHODS AND APPARATUSES FOR FORMING SEMICONDUCTOR DEVICES CONTAININ...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...

THREE DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FOR...

THREE DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FOR...

FLUORINE-FREE TUNGSTEN DEPOSITION PROCESS EMPLOYING IN-SITU OXIDATI...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING ELECTRICALLY CONDUCTIVE L...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING REPLACEMENT CONTACT VIA...

SELECTIVE TUNGSTEN GROWTH FOR WORD LINES OF A THREE-DIMENSIONAL MEM...

COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN...

SINGLE CHAMBER MULTI-PARTITION DEPOSITION TOOL AND METHOD OF OPERAT...

METHOD OF FABRICATING MEMORY ARRAY HAVING DIVIDED APART BIT LINES A...

BLOCKING OXIDE IN MEMORY OPENING INTEGRATION SCHEME FOR THREE-DIMEN...

Vertical Thin Film Transistors In Non-Volatile Storage Systems

METHOD OF OPERATING MEMORY ARRAY HAVING DIVIDED APART BIT LINES AND...

SET OF STEPPED SURFACES FORMATION FOR A MULTILEVEL INTERCONNECT STR...

MEMORY ARRAY HAVING DIVIDED APART BIT LINES AND PARTIALLY DIVIDED B...

Vertical Thin Film Transistors In Non-Volatile Storage Systems

Air Gap Formation Between Bit Lines with Top Protection

Air Gap Formation Between Bit Lines with Side Protection

COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN...

FLOATING GATE ULTRAHIGH DENSITY VERTICAL NAND FLASH MEMORY AND METH...

METHOD FOR FORMING METAL WIRE