Naresh Thapar

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor having increased breakdown voltage
- Patent number 9,379,231
- Issue date Jun 28, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage rectifier and switching circuits
- Patent number 9,076,853
- Issue date Jul 7, 2015
- International Rectifie Corporation
- Michael A. Briere
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Power transistor having segmented gate
- Patent number 8,969,881
- Issue date Mar 3, 2015
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ACCUFET with Schottky source contact
- Patent number 7,999,310
- Issue date Aug 16, 2011
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET technology for DC-DC converter applications
- Patent number 7,557,395
- Issue date Jul 7, 2009
- International Rectifier Corporation
- Ling Ma
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
ACCUFET with Schottky source contact
- Patent number 7,485,932
- Issue date Feb 3, 2009
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSgated power semiconductor device with source field electrode
- Patent number 7,482,654
- Issue date Jan 27, 2009
- International Rectifier Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ACCUFET with schottky source contact
- Patent number 7,400,014
- Issue date Jul 15, 2008
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench fet with self aligned source and contact
- Patent number 7,397,083
- Issue date Jul 8, 2008
- International Rectifier Corporation
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench FET with self aligned source and contact
- Patent number 7,301,200
- Issue date Nov 27, 2007
- International Rectifier Corporation
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage power MOSFET device and process for its manufacture
- Patent number 7,229,872
- Issue date Jun 12, 2007
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench fet with self aligned source and contact
- Patent number 7,045,859
- Issue date May 16, 2006
- International Rectifier Corporation
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device with a trench termi...
- Patent number 6,921,699
- Issue date Jul 26, 2005
- International Rectifier Corporation
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSgated device with accumulated channel region and Schottky contact
- Patent number 6,878,994
- Issue date Apr 12, 2005
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacture of low voltage power MOSFET device
- Patent number 6,849,507
- Issue date Feb 1, 2005
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage power MOSFET device and process for its manufacture
- Patent number 6,580,123
- Issue date Jun 17, 2003
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three commonly housed diverse semiconductor dice
- Patent number 6,448,643
- Issue date Sep 10, 2002
- International Rectifier Corporation
- Chuan Cheah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reversed source-drain mosgated device
- Patent number 6,437,390
- Issue date Aug 20, 2002
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three commonly housed diverse semiconductor dice
- Patent number 6,388,319
- Issue date May 14, 2002
- International Rectifier Corporation
- Chuan Cheah
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Transistor Having Increased Breakdown Voltage
- Publication number 20130214330
- Publication date Aug 22, 2013
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Transistor Having Segmented Gate
- Publication number 20130214283
- Publication date Aug 22, 2013
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Transistor with Passive Oscillation Prevention
- Publication number 20120241820
- Publication date Sep 27, 2012
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
High Voltage Rectifier and Switching Circuits
- Publication number 20120235209
- Publication date Sep 20, 2012
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACCUFET WITH SCHOTTKY SOURCE CONTACT
- Publication number 20090001455
- Publication date Jan 1, 2009
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench fet with self aligned source and contact
- Publication number 20080061365
- Publication date Mar 13, 2008
- International Rectifier Corporation
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low voltage power MOSFET device and process for its manufacture
- Publication number 20070202650
- Publication date Aug 30, 2007
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench fet with self aligned source and contact
- Publication number 20060157782
- Publication date Jul 20, 2006
- International Rectifier Corporation
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACCUFET with Schottky source contact
- Publication number 20060049454
- Publication date Mar 9, 2006
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSgated power semiconductor device with source field electrode
- Publication number 20060033154
- Publication date Feb 16, 2006
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACCUFET with Schottky source contact
- Publication number 20060017078
- Publication date Jan 26, 2006
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET technology for DC-DC converter applications
- Publication number 20040251491
- Publication date Dec 16, 2004
- Ling Ma
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Low voltage power MOSFET device and process for its manufacture
- Publication number 20040214397
- Publication date Oct 28, 2004
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device processing
- Publication number 20040137684
- Publication date Jul 15, 2004
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mosgated device with accumulated channel region and schottky contact
- Publication number 20040119103
- Publication date Jun 24, 2004
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low voltage power MOSFET device and process for its manufacture
- Publication number 20030194843
- Publication date Oct 16, 2003
- International Rectifier Corporation
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench fet with self aligned source and contact
- Publication number 20030085422
- Publication date May 8, 2003
- International Rectifier Corp.
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reversed source-drain mosgated device
- Publication number 20020036318
- Publication date Mar 28, 2002
- International Rectifier Corp.
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three commonly housed diverse semiconductor dice
- Publication number 20010048154
- Publication date Dec 6, 2001
- International Rectifier Corp.
- Chuan Cheah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low voltage power MOSFET device and process for its manufacture
- Publication number 20010026989
- Publication date Oct 4, 2001
- International Rectifier Corp.
- Naresh Thapar
- H01 - BASIC ELECTRIC ELEMENTS

Naresh Thapar

Person

Patents Grantslast 30 patents

Transistor having increased breakdown voltage

High voltage rectifier and switching circuits

Power transistor having segmented gate

ACCUFET with Schottky source contact

Trench MOSFET technology for DC-DC converter applications

ACCUFET with Schottky source contact

MOSgated power semiconductor device with source field electrode

ACCUFET with schottky source contact

Trench fet with self aligned source and contact

Trench FET with self aligned source and contact

Low voltage power MOSFET device and process for its manufacture

Trench fet with self aligned source and contact

Method for manufacturing a semiconductor device with a trench termi...

MOSgated device with accumulated channel region and Schottky contact

Process for manufacture of low voltage power MOSFET device

Low voltage power MOSFET device and process for its manufacture

Three commonly housed diverse semiconductor dice

Reversed source-drain mosgated device

Three commonly housed diverse semiconductor dice

Patents Applicationslast 30 patents

Transistor Having Increased Breakdown Voltage

Power Transistor Having Segmented Gate

III-Nitride Transistor with Passive Oscillation Prevention

High Voltage Rectifier and Switching Circuits

ACCUFET WITH SCHOTTKY SOURCE CONTACT

Trench fet with self aligned source and contact

Low voltage power MOSFET device and process for its manufacture

Trench fet with self aligned source and contact

ACCUFET with Schottky source contact

MOSgated power semiconductor device with source field electrode

ACCUFET with Schottky source contact

Trench MOSFET technology for DC-DC converter applications

Low voltage power MOSFET device and process for its manufacture

Semiconductor device processing

Mosgated device with accumulated channel region and schottky contact

Low voltage power MOSFET device and process for its manufacture

Trench fet with self aligned source and contact

Reversed source-drain mosgated device

Three commonly housed diverse semiconductor dice

Low voltage power MOSFET device and process for its manufacture