Naveen Tipirneni

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fringe capacitor, integrated circuit and manufacturing process for...
- Patent number 12,113,062
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
- Patent number 12,046,666
- Issue date Jul 23, 2024
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT having conduction barrier between drain fingertip and source
- Patent number 11,177,378
- Issue date Nov 16, 2021
- Texas Instruments Incorporated
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
- Patent number 11,049,960
- Issue date Jun 29, 2021
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally off III nitride transistor
- Patent number 11,011,515
- Issue date May 18, 2021
- Texas Instruments Incorporated
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group IIIA-N HEMT with a tunnel diode in the gate stack
- Patent number 10,707,324
- Issue date Jul 7, 2020
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT having conduction barrier between drain fingertip and source
- Patent number 10,680,093
- Issue date Jun 9, 2020
- Texas Instruments Incorporated
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group IIIA-N HEMT with a tunnel diode in the gate stack
- Patent number 10,381,456
- Issue date Aug 13, 2019
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adaptive charge balanced edge termination
- Patent number 10,229,988
- Issue date Mar 12, 2019
- Vishay-Siliconix
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field boosted metal-oxide-semiconductor field effect transistor
- Patent number 10,026,835
- Issue date Jul 17, 2018
- Vishay-Siliconix
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT having conduction barrier between drain fingertip and source
- Patent number 9,882,041
- Issue date Jan 30, 2018
- Texas Instruments Incorporated
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche energy handling capable III-nitride transistors
- Patent number 9,865,722
- Issue date Jan 9, 2018
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adaptive charge balanced MOSFET techniques
- Patent number 9,853,140
- Issue date Dec 26, 2017
- Vishay Siliconix
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adaptive charge balanced edge termination
- Patent number 9,842,911
- Issue date Dec 12, 2017
- Vishay Siliconix
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nitride process for reduction of threshold shift
- Patent number 9,741,557
- Issue date Aug 22, 2017
- Texas Instruments Incorporated
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated III-N semiconductor devices
- Patent number 9,685,545
- Issue date Jun 20, 2017
- Texas Instruments Incorporated
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device having a GaNFET, an overvo...
- Patent number 9,559,093
- Issue date Jan 31, 2017
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride device and method having a gate isolating structure
- Patent number 9,553,151
- Issue date Jan 24, 2017
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Driver for normally on III-nitride transistors to get normally-off...
- Patent number 9,543,944
- Issue date Jan 10, 2017
- Texas Instruments Incorporated
- Sameer Pendharkar
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Processes used in fabricating a metal-insulator-semiconductor field...
- Patent number 9,508,596
- Issue date Nov 29, 2016
- Vishay Siliconix
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layer transfer of silicon onto III-nitride material for heterogenou...
- Patent number 9,396,948
- Issue date Jul 19, 2016
- Texas Instruments Incorporated
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming driver for normally on III-nitride transistors...
- Patent number 9,379,022
- Issue date Jun 28, 2016
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming avalanche energy handling capable III-nitride tr...
- Patent number 9,356,117
- Issue date May 31, 2016
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form stepped dielectric for field plate formation
- Patent number 9,196,692
- Issue date Nov 24, 2015
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Driver for normally on III-nitride transistors to get normally-off...
- Patent number 9,093,301
- Issue date Jul 28, 2015
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride device and method having a gate isolating structure
- Patent number 9,054,027
- Issue date Jun 9, 2015
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form stepped dielectric for field plate formation
- Patent number 9,054,071
- Issue date Jun 9, 2015
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche energy handling capable III-nitride transistors
- Patent number 9,035,318
- Issue date May 19, 2015
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride enhancement mode transistors with tunable and high gate...
- Patent number 8,933,461
- Issue date Jan 13, 2015
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped dielectric for field plate formation
- Patent number 8,829,613
- Issue date Sep 9, 2014
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FRINGE CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...
- Publication number 20240429233
- Publication date Dec 26, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRING CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...
- Publication number 20220208755
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
- Publication number 20210280702
- Publication date Sep 9, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY OFF III NITRIDE TRANSISTOR
- Publication number 20210242200
- Publication date Aug 5, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE
- Publication number 20200303535
- Publication date Sep 24, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo JOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
- Publication number 20200287033
- Publication date Sep 10, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK
- Publication number 20190319111
- Publication date Oct 17, 2019
- TEXAS INSTRUMENTS INCORPORATED
- CHANG SOO SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK
- Publication number 20180323297
- Publication date Nov 8, 2018
- TEXAS INSTRUMENTS INCORPORATED
- CHANG SOO SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY OFF III NITRIDE TRANSISTOR
- Publication number 20180277535
- Publication date Sep 27, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE
- Publication number 20180151713
- Publication date May 31, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo JOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADAPTIVE CHARGE BALANCED EDGE TERMINATION
- Publication number 20180114852
- Publication date Apr 26, 2018
- VISHAY-SILICONIX
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATED III-N SEMICONDUCTOR DEVICES
- Publication number 20170250272
- Publication date Aug 31, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATED III-N SEMICONDUCTOR DEVICES
- Publication number 20170148905
- Publication date May 25, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE ENERGY HANDLING CAPABLE III-NITRIDE TRANSISTORS
- Publication number 20170098702
- Publication date Apr 6, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY OFF III-NITRIDE TRANSISTOR
- Publication number 20160293596
- Publication date Oct 6, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIVER FOR NORMALLY ON III-NITRIDE TRANSISTORS TO GET NORMALLY-OFF...
- Publication number 20160277021
- Publication date Sep 22, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE ENERGY HANDLING CAPABLE III-NITRIDE TRANSISTORS
- Publication number 20160247795
- Publication date Aug 25, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSES USED IN FABRICATING A METAL-INSULATOR-SEMICONDUCTOR FIELD...
- Publication number 20150372077
- Publication date Dec 24, 2015
- VISHAY-SILICONIX
- Naveen TIPIRNENI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIVER FOR NORMALLY ON III-NITRIDE TRANSISTORS TO GET NORMALLY-OFF...
- Publication number 20150287641
- Publication date Oct 8, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICE AND METHOD HAVING A GATE ISOLATING STRUCTURE
- Publication number 20150270357
- Publication date Sep 24, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Sameer PENDHARKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM STEPPED DIELECTRIC FOR FIELD PLATE FORMATION
- Publication number 20150243742
- Publication date Aug 27, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE ENERGY HANDLING CAPABLE III-NITRIDE TRANSISTORS
- Publication number 20150221747
- Publication date Aug 6, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BI-DIRECTIONAL GALLIUM NITRIDE SWITCH WITH SELF-MANAGED SUBSTRATE BIAS
- Publication number 20140374766
- Publication date Dec 25, 2014
- Sandeep R. BAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM STEPPED DIELECTRIC FOR FIELD PLATE FORMATION
- Publication number 20140339671
- Publication date Nov 20, 2014
- Sameer PENDHARKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR LAYOUT
- Publication number 20140327011
- Publication date Nov 6, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Sameer PENDHARKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE ENERGY HANDLING CAPABLE III-NITRIDE TRANSISTORS
- Publication number 20140327010
- Publication date Nov 6, 2014
- Texas Instuments Incorporated
- Sameer PENDHARKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER TRANSFER OF SILICON ONTO III-NITRIDE MATERIAL FOR HETEROGENOU...
- Publication number 20140329370
- Publication date Nov 6, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Naveen TIPIRNENI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIVER FOR NORMALLY ON III-NITRIDE TRANSISTORS TO GET NORMALLY-OFF...
- Publication number 20140252367
- Publication date Sep 11, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adaptive Charge Balanced MOSFET Techniques
- Publication number 20140183624
- Publication date Jul 3, 2014
- VISHAY-SILICONIX
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE ENHANCEMENT MODE TRANSISTORS WITH TUNABLE AND HIGH GATE...
- Publication number 20140042452
- Publication date Feb 13, 2014
- Sameer PENDHARKAR
- H01 - BASIC ELECTRIC ELEMENTS

Naveen Tipirneni

Person

Patents Grantslast 30 patents

Fringe capacitor, integrated circuit and manufacturing process for...

Gallium nitride (GaN) based transistor with multiple p-GaN blocks

HEMT having conduction barrier between drain fingertip and source

Gallium nitride (GaN) based transistor with multiple p-GaN blocks

Normally off III nitride transistor

Group IIIA-N HEMT with a tunnel diode in the gate stack

HEMT having conduction barrier between drain fingertip and source

Group IIIA-N HEMT with a tunnel diode in the gate stack

Adaptive charge balanced edge termination

Field boosted metal-oxide-semiconductor field effect transistor

HEMT having conduction barrier between drain fingertip and source

Avalanche energy handling capable III-nitride transistors

Adaptive charge balanced MOSFET techniques

Adaptive charge balanced edge termination

Silicon nitride process for reduction of threshold shift

Isolated III-N semiconductor devices

Method of forming a semiconductor device having a GaNFET, an overvo...

III-nitride device and method having a gate isolating structure

Driver for normally on III-nitride transistors to get normally-off...

Processes used in fabricating a metal-insulator-semiconductor field...

Layer transfer of silicon onto III-nitride material for heterogenou...

Process for forming driver for normally on III-nitride transistors...

Method for forming avalanche energy handling capable III-nitride tr...

Method to form stepped dielectric for field plate formation

Driver for normally on III-nitride transistors to get normally-off...

III-nitride device and method having a gate isolating structure

Method to form stepped dielectric for field plate formation

Avalanche energy handling capable III-nitride transistors

III-nitride enhancement mode transistors with tunable and high gate...

Stepped dielectric for field plate formation

Patents Applicationslast 30 patents

FRINGE CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...

FRING CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...

GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS

NORMALLY OFF III NITRIDE TRANSISTOR

HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE

GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS

GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK

GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK

NORMALLY OFF III NITRIDE TRANSISTOR

HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE

ADAPTIVE CHARGE BALANCED EDGE TERMINATION

ISOLATED III-N SEMICONDUCTOR DEVICES

ISOLATED III-N SEMICONDUCTOR DEVICES

AVALANCHE ENERGY HANDLING CAPABLE III-NITRIDE TRANSISTORS

NORMALLY OFF III-NITRIDE TRANSISTOR

DRIVER FOR NORMALLY ON III-NITRIDE TRANSISTORS TO GET NORMALLY-OFF...

AVALANCHE ENERGY HANDLING CAPABLE III-NITRIDE TRANSISTORS

PROCESSES USED IN FABRICATING A METAL-INSULATOR-SEMICONDUCTOR FIELD...

DRIVER FOR NORMALLY ON III-NITRIDE TRANSISTORS TO GET NORMALLY-OFF...

III-NITRIDE DEVICE AND METHOD HAVING A GATE ISOLATING STRUCTURE

METHOD TO FORM STEPPED DIELECTRIC FOR FIELD PLATE FORMATION

AVALANCHE ENERGY HANDLING CAPABLE III-NITRIDE TRANSISTORS

BI-DIRECTIONAL GALLIUM NITRIDE SWITCH WITH SELF-MANAGED SUBSTRATE BIAS

METHOD TO FORM STEPPED DIELECTRIC FOR FIELD PLATE FORMATION

III-NITRIDE TRANSISTOR LAYOUT

AVALANCHE ENERGY HANDLING CAPABLE III-NITRIDE TRANSISTORS

LAYER TRANSFER OF SILICON ONTO III-NITRIDE MATERIAL FOR HETEROGENOU...

DRIVER FOR NORMALLY ON III-NITRIDE TRANSISTORS TO GET NORMALLY-OFF...

Adaptive Charge Balanced MOSFET Techniques

III-NITRIDE ENHANCEMENT MODE TRANSISTORS WITH TUNABLE AND HIGH GATE...